MJ11020 - описание и поиск аналогов

isc Silicon NPN Darlington Power Transistor MJ11020 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V (Min.) CEO(SUS) High DC Current Gain- h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 5.0A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp

MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and http //onsemi.com motor control applications. 15 AMPERE Features COMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types) DARLINGTON POWER Collector-Emi

MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High-Current Complementary Silicon Power Transistors are for use 50 AMPERE as output devices in complementary general purpose amplifier COMPLEMENTARY applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc 60 - 120 VOLTS

MJ11021(PNP) MJ11022 (NPN) Complementary Darlington Silicon Power Transistors Complementary Darlington Silicon Power Transistors are designed for use as general purpose amplifiers, low frequency switching and http //onsemi.com motor control applications. 15 AMPERE Features COMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types) DARLINGTON POWER Collector-Emi

isc Silicon NPN Darlington Power Transistor MJ11028 DESCRIPTION Collector-Emitter Breakdown Voltage V = 60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = 25A FE C h = 400(Min.)@I = 50A FE C Complement to the PNP MJ11029 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in comp

isc Silicon NPN Darlington Power Transistor MJ11022 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V (Min.) CEO(SUS) High DC Current Gain- h = 400(Min.)@I = 10A FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 5.0A CE (sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purp

isc Silicon PNP Darlington Power Transistor MJ11029 DESCRIPTION Collector-Emitter Breakdown Voltage V = -60V(Min.) (BR)CEO High DC Current Gain- h = 1000(Min.)@I = -25A FE C h = 400(Min.)@I = -50A FE C Complement to the NPN MJ11028 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as output devices in c