Биполярный транзистор MJ11020 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ11020
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 175 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 175 °C
Ёмкость коллекторного перехода (Cc): 400 pf
Статический коэффициент передачи тока (hfe): 8000
Корпус транзистора: TO3
MJ11020 Datasheet (PDF)
mj11020.pdf
isc Silicon NPN Darlington Power Transistor MJ11020DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
mj11028r.pdf
Order this documentMOTOROLAby MJ11028/DSEMICONDUCTOR TECHNICAL DATANPNMJ11028High-Current ComplementaryMJ11030Silicon TransistorsMJ11032*. . . for use as output devices in complementary general purpose amplifier applica-PNPtions. High DC Current Gain hFE = 1000 (Min) @ IC = 25 AdcMJ11029hFE = 400 (Min) @ IC = 50 Adc Curves to 100 A (Pulsed)MJ11031
mj11022g.pdf
MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi
mj11028g.pdf
MJ11028, MJ11030,MJ11032 (NPN)MJ11029, MJ11033 (PNP)High-CurrentComplementary SiliconPower TransistorsHigh-Current Complementary Silicon Power Transistors are for use50 AMPEREas output devices in complementary general purpose amplifierCOMPLEMENTARYapplications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc60 - 120 VOLTS
mj11021g.pdf
MJ11021(PNP)MJ11022 (NPN)Complementary DarlingtonSilicon Power TransistorsComplementary Darlington Silicon Power Transistors are designedfor use as general purpose amplifiers, low frequency switching andhttp://onsemi.commotor control applications.15 AMPEREFeaturesCOMPLEMENTARY High dc Current Gain @ 10 Adc - hFE = 400 Min (All Types)DARLINGTON POWER Collector-Emi
mj11028.pdf
isc Silicon NPN Darlington Power Transistor MJ11028DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = 25AFE C: h = 400(Min.)@I = 50AFE CComplement to the PNP MJ11029Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in comp
mj11022.pdf
isc Silicon NPN Darlington Power Transistor MJ11022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V (Min.)CEO(SUS)High DC Current Gain-: h = 400(Min.)@I = 10AFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 5.0ACE (sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purp
mj11029.pdf
isc Silicon PNP Darlington Power Transistor MJ11029DESCRIPTIONCollector-Emitter Breakdown Voltage: V = -60V(Min.)(BR)CEOHigh DC Current Gain-: h = 1000(Min.)@I = -25AFE C: h = 400(Min.)@I = -50AFE CComplement to the NPN MJ11028Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in c
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050