Биполярный транзистор MJ2501 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJ2501
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 1000
Корпус транзистора: TO3
MJ2501 Datasheet (PDF)
mj2501 mj3001.pdf
MJ2501MJ3001COMPLEMENTARY SILICON POWER DARLINGTONTRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJ2501 is a silicon epitaxial-base PNPpower transistors in monolithic Darlingtonconfiguration and are mounted in Jedec TO-3metal case. They are intented for use in powerlinear and switching applications.1The complementary NPN type is the MJ3001.2TO-3INTERNA
mj2501.pdf
isc Silicon PNP Darlingtion Power Transistor MJ2501DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I = -5AFE CCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices in complementarygeneral purpo
mj2500-mj2501-mj3000-mj3001.pdf
COMPLEMENTARY POWER DARLINGTONS The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intented for use in power linear and switching applications. The complementary NPN types are the MJ3000 and MJ3001 respectively. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitMJ2500 6
mj2500re.pdf
Order this documentMOTOROLAby MJ2500/DSEMICONDUCTOR TECHNICAL DATAMJ2955 (See 2N3055)MJ2955A(See 2N3055A)Medium-Power ComplementaryPNPSilicon Transistors MJ2500. . . for use as output devices in complementary general purpose amplifier applica-*MJ2501tions.NPN High DC Current Gain hFE = 4000 (Typ) @ IC = 5.0 Adc Monolithic Construction with Builtin Ba
mj2500.pdf
isc Silicon PNP Darlingtion Power Transistor MJ2500DESCRIPTIONBuilt-in Base-Emitter Shunt ResistorsHigh DC current gain-h = 1000 (Min) @ I = -5AFE CCollector-Emitter Breakdown Voltage-V = -60V(Min)(BR)CEOComplement to the NPN MJ3000Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as output devices
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050