MJ2955A - описание и поиск аналогов

 ..1. Size:235K  motorola
 2n3055a mj2955a mj15015 mj15016.pdf 

Order this document MOTOROLA by 2N3055A/D SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon 2N3055A High-Power Transistors * MJ15015 . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters, inverters

 ..2. Size:193K  mospec
 mj15015-16 2n3055a mj2955a.pdf 

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 ..3. Size:207K  inchange semiconductor
 mj2955a.pdf 

isc Silicon PNP Power Transistors MJ2955A DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1V(Max)@ I = -4A CE(sat C Complement to Type 2N3055A Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for general-purpose switching and amplif

 8.1. Size:130K  motorola
 mj2955-2n3055.pdf 

Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general purpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P

 8.2. Size:179K  motorola
 2n3055 mj2955.pdf 

Order this document MOTOROLA by 2N3055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N3055 * Complementary Silicon Power PNP MJ2955* Transistors . . . designed for general purpose switching and amplifier applications. *Motorola Preferred Device DC Current Gain hFE = 20 70 @ IC = 4 Adc Collector Emitter Saturation Voltage 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc P

 8.3. Size:90K  st
 2n3055 mj2955 2.pdf 

2N3055 MJ2955 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 1 2 Description TO-3 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal schematic d

 8.4. Size:71K  onsemi
 mj2955g.pdf 

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http //onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Exc

 8.5. Size:70K  onsemi
 2n3055 mj2955.pdf 

2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general-purpose switching and amplifier applications. Features http //onsemi.com DC Current Gain - hFE = 20-70 @ IC = 4 Adc Collector-Emitter Saturation Voltage - 15 AMPERE VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc POWER TRANSISTORS Exc

 8.6. Size:330K  cdil
 2n3055 mj2955.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company 2N3055 NPN SILICON PLANAR POWER TRANSISTORS MJ2955 PNP TO-3 Metal Can Package General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITS VALUE Collector Base Voltage VCBO V 100 Collector Emitter Voltage VCEO V 60 Collector Emitter Voltage(RBE=100

 8.7. Size:206K  inchange semiconductor
 mj2955.pdf 

isc Silicon PNP Power Transistors MJ2955 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = -4A FE C Collector-Emitter Saturation Voltage- V )= -1.1V(Max)@ I = -4A CE(sat C Complement to Type 2N3055 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier