MJ4031. Аналоги и основные параметры

Наименование производителя: MJ4031

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 150 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 16 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 2000

Корпус транзистора: TO3

 Аналоги (замена) для MJ4031

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MJ4031 даташит

 ..1. Size:199K  inchange semiconductor
 mj4031.pdf pdf_icon

MJ4031

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4031 DESCRIPTION With TO-3 package Respectively complement to type MJ4034 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE UNIT VCBO

 0.1. Size:215K  comset
 mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdf pdf_icon

MJ4031

MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are t

 9.1. Size:69K  st
 mj4032 mj4035.pdf pdf_icon

MJ4031

MJ4032 MJ4035 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3 The MJ4035 is silicon epitaxial-base NPN power transistor in mon

 9.2. Size:116K  inchange semiconductor
 mj4033 4034 4035.pdf pdf_icon

MJ4031

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 si

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJ3801, MJ3802, MJ400, MJ4000, MJ4001, MJ4010, MJ4011, MJ4030, BD333, MJ4032, MJ4033, MJ4034, MJ4035, MJ410, MJ4101, MJ411, MJ413