Справочник транзисторов. MJ4033

 

Биполярный транзистор MJ4033 Даташит. Аналоги


   Наименование производителя: MJ4033
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 200 °C
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO3
     - подбор биполярного транзистора по параметрам

 

MJ4033 Datasheet (PDF)

 ..1. Size:116K  inchange semiconductor
mj4033 4034 4035.pdfpdf_icon

MJ4033

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si

 0.1. Size:215K  comset
mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdfpdf_icon

MJ4033

MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are t

 9.1. Size:69K  st
mj4032 mj4035.pdfpdf_icon

MJ4033

MJ4032MJ4035COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3The MJ4035 is silicon epitaxial-base NPN powertransistor in mon

 9.2. Size:199K  inchange semiconductor
mj4032.pdfpdf_icon

MJ4033

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4032 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO

Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: BD333 | 2N2222AE | 2N6620 | NJM13003-1.63 | 2N2605CSM | 2N30 | MMBT2222L

 

 
Back to Top

 


 
.