Справочник транзисторов. MJ4035

 

Биполярный транзистор MJ4035 Даташит. Аналоги


   Наименование производителя: MJ4035
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 200 °C
   Статический коэффициент передачи тока (hfe): 2000
   Корпус транзистора: TO3
 

 Аналог (замена) для MJ4035

   - подбор ⓘ биполярного транзистора по параметрам

 

MJ4035 Datasheet (PDF)

 ..1. Size:69K  st
mj4032 mj4035.pdfpdf_icon

MJ4035

MJ4032MJ4035COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTONCONFIGURATION INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATIONS 1 GENERAL PURPOSE SWITCHING 2 GENERAL PURPOSE AMPLIFIERS DESCRIPTION TO-3The MJ4035 is silicon epitaxial-base NPN powertransistor in mon

 0.1. Size:215K  comset
mj4030-mj4031-mj4032-mj4033-mj4034-mj4035.pdfpdf_icon

MJ4035

MEDIUM POWER COMPLEMENTARY SILICON MEDIUM POWER COMPLEMENTARY SILICON TRANSISTORS TRANSISTORS For use as output devices in complementary general purpose amplifier applications. High DC current Gain hFE=3500 (Typ) @ IC=10 Adc Monolithic Construction with Built-in Base Emitter Shunt Resistor The MJ4030/31/32 ares the transistors NPN The complementary PNP types are t

 9.1. Size:116K  inchange semiconductor
mj4033 4034 4035.pdfpdf_icon

MJ4035

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJ4033/4034/4035 DESCRIPTION With TO-3 package Respectively complement to type MJ4030/4031/4032 DARLINGTON High DC current gain APPLICATIONS For use as output devices in complementary general purpose amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 si

 9.2. Size:199K  inchange semiconductor
mj4032.pdfpdf_icon

MJ4035

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor MJ4032 DESCRIPTION With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONSFor use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VALUE UNITVCBO

Другие транзисторы... MJ4001 , MJ4010 , MJ4011 , MJ4030 , MJ4031 , MJ4032 , MJ4033 , MJ4034 , BD139 , MJ410 , MJ4101 , MJ411 , MJ413 , MJ420 , MJ4200 , MJ4201 , MJ420S .

History: 2SD554 | TL142 | 2SA956 | 2SC4399-3 | FJPF5321 | 3DG2058S | BC858CW

 

 
Back to Top

 


 
.