Справочник транзисторов. MJ8502

 

Биполярный транзистор MJ8502 Даташит. Аналоги


   Наименование производителя: MJ8502
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 200 °C
   Ёмкость коллекторного перехода (Cc): 300 pf
   Статический коэффициент передачи тока (hfe): 7.5
   Корпус транзистора: TO3
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MJ8502 Datasheet (PDF)

 ..1. Size:170K  inchange semiconductor
 mj8502.pdf pdf_icon

MJ8502

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8502 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.1. Size:207K  inchange semiconductor
 mj8504.pdf pdf_icon

MJ8502

isc Silicon NPN Power Transistor MJ8504DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for line

 9.2. Size:170K  inchange semiconductor
 mj8501.pdf pdf_icon

MJ8502

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8501 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 800V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

 9.3. Size:170K  inchange semiconductor
 mj8500.pdf pdf_icon

MJ8502

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ8500 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 700V(Min) High Switching Speed APPLICATIONSDesigned for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applicat

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Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SB810 | BDS11SM | BC528-6 | 2SC2528

 

 
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