MJD112T4. Аналоги и основные параметры
Наименование производителя: MJD112T4
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 20 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 25 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hFE): 6000
Корпус транзистора: TO252
Аналоги (замена) для MJD112T4
- подборⓘ биполярного транзистора по параметрам
MJD112T4 даташит
0.1. Size:224K onsemi
mjd112t4g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.1. Size:306K motorola
mjd112 mjd117.pdf 
Order this document MOTOROLA by MJD112/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD112 Complementary Darlington PNP MJD117* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, converters, and power amplifiers. POWER TRANS
8.3. Size:152K fairchild semi
mjd112.pdf 
November 2006 MJD112 tm NPN Silicon Darlington Transistor Features High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Equivalent Circuit C B D-PAK 1 R1 R2 1.Base 2.Collector 3.Emitter E R1 10k R2 0.6k Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VC
8.4. Size:153K onsemi
njvmjd112 njvmjd117.pdf 
MJD112 (NPN), MJD117 (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications http //onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, SILICON and power amplifiers. POWER TRANSISTORS Features 2 AMPERES Lead Formed for Surface Mount Applications in Plas
8.5. Size:224K onsemi
mjd112rlg.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.6. Size:224K onsemi
mjd112-1g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.7. Size:224K onsemi
mjd112g.pdf 
MJD112, NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington http //onsemi.com Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS Designed for general purpose power and switching such as output or 2 AMPERES driver stages in applications such as switching regulators, converters, 100 VOLTS, 20 WATTS and power amplifiers. Features
8.8. Size:84K cdil
mjd112 mjd117.pdf 
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD112 NPN MJD117 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Power and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCBO 100 Collector Base Voltage V VCEO 100 Collector Emitter Voltage V E
8.9. Size:394K kec
mjd112 l.pdf 
SEMICONDUCTOR MJD112/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE. A I C J FEATURES DIM MILLIMETERS High DC Current Gain. _ A 6.60 + 0.2 _ B 6.10 + 0.2 hFE=1000(Min.), VCE=4V, IC=1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low Collector-Emitter Saturation Voltage. _ E 2.70 + 0.2 _ F 2.30 + 0
8.10. Size:184K lge
mjd112.pdf 
MJD112(NPN) TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Complementary darlington power transistors dpak for surface mount applications MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO 100 V Collector-Base Voltage VCEO 100 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage
Другие транзисторы: MJ8505, MJ900, MJ9000, MJ901, MJ920, MJ921, MJD112, MJD112-1, 2SA1015, MJD117, MJD117-1, MJD117T4, MJD122, MJD122-1, MJD122T4, MJD127, MJD127-1
