MJD122 - описание и поиск аналогов

 ..1. Size:93K  st
 mjd122 mjd127.pdf 

MJD122 MJD127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR- EMITTER DIODE SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 ) 3 ELECTRICAL SIMILAR TO TIP122 AND TIP127 1 APPLICATIONS GENERAL PURPOSE SWITCHING AND DPAK AMPLIFIER. TO-252 (Suffix

 ..2. Size:403K  cdil
 mjd122 7.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS MJD122 NPN MJD127 PNP DPAK (TO-252) Plastic Package Designed for General Purpose Amplifier and Low Speed Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Base Voltage VCBO 100 V Collector Emitter Voltage V

 ..3. Size:163K  lge
 mjd122.pdf 

MJD122(NPN) TO-251/TO-525-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High DC current gain Electrically similar to popular TIP122 Built-in a damper diode at E-C TO-252-2L MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Bas

 ..4. Size:664K  wietron
 mjd122.pdf 

MJD122 NPN PLASTIC ENCAPSULATE TRANSISTORS P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * High DC current gain D-PAK(TO-252) * Electrically similar to popular TIP122 * Built-in a damper diode at E-C ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage 100 V VCEO 100 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5

 ..5. Size:451K  first silicon
 mjd122.pdf 

SEMICONDUCTOR MJD122 TECHNICAL DATA NPN Silicon Darlington Transistor MJD122I A I FEATURES C J High DC Current Gain Electrically Similar to Popular TIP122 DIM MILLIMETERS A 6.50 0.2 Built-in a Damper Diode at E-C B 5.60 0.2 C 5.20 0.2 D 1.50 0.2 We declare that the material of E 2.70 0.2 F 2.30 0.1 product compliance with RoHS requirements.

 0.1. Size:284K  motorola
 mjd122re mjd127.pdf 

Order this document MOTOROLA by MJD122/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD122 Complementary Darlington PNP MJD127* Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS

 0.2. Size:205K  onsemi
 mjd122t4g.pdf 

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

 0.3. Size:142K  onsemi
 njvmjd122 njvmjd127.pdf 

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements

 0.4. Size:205K  onsemi
 mjd122g.pdf 

MJD122, NJVMJD122T4G (NPN), MJD127 (PNP) Complementary Darlington Power Transistor http //onsemi.com DPAK For Surface Mount Applications SILICON Designed for general purpose amplifier and low speed switching POWER TRANSISTOR applications. 8 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves Surface Mount Replacements for 2N

 0.5. Size:421K  first silicon
 mjd122i.pdf 

SEMICONDUCTOR MJD122I TECHNICAL DATA NPN Silicon Darlington Transistor MJD122I TO-251-3L FEATURES High DC Current Gain 1.BASE Electrically Similar to Popular TIP122 Built-in a Damper Diode at E-C 2.COLLECTOR 3.EMITTER We declare that the material of product compliance with RoHS requirements. Equivalent Circuit C B R1 R2 R1 8k E R2 0.12k MAXI

 0.6. Size:884K  slkor
 mjd122d.pdf 

MJD122D Silicon NPN Darlington Power Transistor DESCRIPTION Low Collector-Emitter saturation voltage Lead formed for surface mount applications High DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a