Биполярный транзистор MJD210-1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJD210-1
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 12.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 65 MHz
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO252
MJD210-1 Datasheet (PDF)
mjd200re mjd210.pdf
Order this documentMOTOROLAby MJD200/DSEMICONDUCTOR TECHNICAL DATANPNMJD200ComplementaryPNPPlastic Power TransistorsMJD210NPN/PNP Silicon DPAK For Surface MountApplications. . . designed for low voltage, lowpower, highgain audio amplifier applications. SILICONPOWER TRANSISTORS CollectorEmitter Sustaining Voltage 5 AMPERESVCEO(sus) = 25 Vdc (Min) @
mjd200 mjd210.pdf
MJD200MJD210COMPLEMENTARY SILICON POWER TRANSISTORS STM PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 (DPAK)POWER PACKAGE IN TAPE & REEL(SUFFIX T4) APPLICATIONS 3 AUDIO AMPLIFIERS1DESCRIPTION The MJD200 is an Epitaxial-Base NPN transistordesigned for low voltage, low power, high gain,DPAKaudio amplifier applications.TO-252Th
mjd210.pdf
MJD210D-PAK for Surface Mount Applications High DC Current Gain Low Collector Emitter Saturation Voltage Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterPNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VC
mjd210g.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
mjd210t4g.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
njvmjd210 mjd200.pdf
MJD200 (NPN),MJD210 (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES High DC Current Gain25 VOLTS, 12.5 WATTS Lead Formed for Surface Mount Applications in Plastic Sleeves(No Suffix
mjd200 mjd210.pdf
Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For SurfaceMount ApplicationsMJD200 (NPN),MJD210 (PNP)www.onsemi.comDesigned for low voltage, low-power, high-gain audioamplifier applications.SILICONPOWER TRANSISTORSFeatures High DC Current Gain5 AMPERES Lead Formed for Surface Mount Applications in Plastic Sleeves25 VOLTS, 12.5 WATTS(No Suffix)
mjd210rlg.pdf
MJD200 (NPN), MJD210,NJVMJD210T4G (PNP)Complementary PlasticPower TransistorsNPN/PNP Silicon DPAK For Surfacehttp://onsemi.comMount ApplicationsDesigned for low voltage, low-power, high-gain audioSILICONamplifier applications.POWER TRANSISTORSFeatures5 AMPERES Collector-Emitter Sustaining Voltage -25 VOLTS, 12.5 WATTSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
mjd210.pdf
UNISONIC TECHNOLOGIES CO., LTD MJD210 PNP SILICON TRANSISTOR PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS 1 DESCRIPTION TO-252 The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications. FEATURE 1*Collector-Emitter Sustaining Voltage TO-251VCEO(SUS) =-25V (Min) @ IC =-10mA *High DC Current Gain hFE =70 (Min) @ IC=-500mA =4
mjd210.pdf
isc Silicon PNP Power Transistor MJD210DESCRIPTIONHigh DC Current Gain-: h = 70(Min) @ I = -0.5AFE CLow Collector Saturation Voltage-: V = -0.3V(Max.)@ I = -0.5 ACE(sat) CComplement to the NPN MJD200Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for low voltage, low -power ,high-gain audioamplifier applic
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050