MJD350T4. Аналоги и основные параметры

Наименование производителя: MJD350T4

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 300 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V

Макcимальный постоянный ток коллектора (Ic): 0.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO252

 Аналоги (замена) для MJD350T4

- подборⓘ биполярного транзистора по параметрам

 

MJD350T4 даташит

 0.1. Size:172K  onsemi
mjd350t4g.pdfpdf_icon

MJD350T4

MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power http //onsemi.com Transistors DPAK For Surface Mount Applications SILICON Designed for line operated audio output amplifier, switchmode POWER TRANSISTORS power supply drivers and other switching applications. 0.5 AMPERE Features 300 VOLTS, 15 WATTS Lead Formed for Surface Mount Applications in Plastic S

 8.1. Size:194K  motorola
mjd340re mjd350.pdfpdf_icon

MJD350T4

Order this document MOTOROLA by MJD340/D SEMICONDUCTOR TECHNICAL DATA NPN * MJD340 High Voltage Power Transistors PNP MJD350* DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers *Motorola Preferred Device and other switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

 8.2. Size:503K  st
mjd340 mjd350.pdfpdf_icon

MJD350T4

MJD340 MJD350 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MEDIUM VOLTAGE CAPABILITY SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 ELECTRICAL SIMILAR TO MJE340 AND MJE350 1 APPLICATIONS SOLENOID/RELAY DRIVERS DPAK GENERAL PURPOSE SWITCHING AND TO-252 AMPLIFIER (S

 8.3. Size:37K  fairchild semi
mjd350.pdfpdf_icon

MJD350T4

MJD350 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO

Другие транзисторы: MJD32C-1, MJD32CT4, MJD32T4, MJD340, MJD340-1, MJD340T4, MJD350, MJD350-1, BD140, MJD41C, MJD41C-1, MJD41CT4, MJD42C, MJD42C-1, MJD42CT4, MJD44H11, MJD44H11-1