MJD42CT4. Аналоги и основные параметры

Наименование производителя: MJD42CT4

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 3 MHz

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO252

 Аналоги (замена) для MJD42CT4

- подборⓘ биполярного транзистора по параметрам

 

MJD42CT4 даташит

 0.1. Size:59K  onsemi
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MJD42CT4

MJD41C (NPN) MJD42C (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 6 AMPERES (No Suffix) 100 VOLTS, 20 WATTS Straight Lead Version in Plastic Sleeves ( 1

 8.1. Size:195K  motorola
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MJD42CT4

Order this document MOTOROLA by MJD41C/D SEMICONDUCTOR TECHNICAL DATA NPN MJD41C* Complementary Power PNP MJD42C* Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) POWER TRANSISTORS Straigh

 8.2. Size:173K  onsemi
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MJD42CT4

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

 8.3. Size:173K  onsemi
mjd42crlg.pdfpdf_icon

MJD42CT4

MJD41C, NJVMJD41CT4G (NPN), MJD42C, NJVMJD42CT4G, NJVMJD42CRLG (PNP) http //onsemi.com Complementary Power Transistors SILICON DPAK For Surface Mount Applications POWER TRANSISTORS 6 AMPERES Designed for general purpose amplifier and low speed switching 100 VOLTS, 20 WATTS applications. Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) S

Другие транзисторы: MJD350, MJD350-1, MJD350T4, MJD41C, MJD41C-1, MJD41CT4, MJD42C, MJD42C-1, 2N3906, MJD44H11, MJD44H11-1, MJD44H11T4, MJD45H11, MJD45H11-1, MJD45H11T4, MJD47, MJD47-1