MJD5731. Аналоги и основные параметры

Наименование производителя: MJD5731

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 250 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 10 MHz

Статический коэффициент передачи тока (hFE): 25

Корпус транзистора: TO251

 Аналоги (замена) для MJD5731

- подборⓘ биполярного транзистора по параметрам

 

MJD5731 даташит

 ..1. Size:128K  onsemi
mjd5731.pdfpdf_icon

MJD5731

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features http //onsemi.com PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in SILICON These Devices are Pb-Free and are RoHS Compliant POWER TRANSISTORS 1.0 AMPERE MAXIMUM RATI

 ..2. Size:222K  inchange semiconductor
mjd5731.pdfpdf_icon

MJD5731

isc Silicon PNP Power Transistor MJD5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(T

 0.1. Size:114K  onsemi
mjd5731-d.pdfpdf_icon

MJD5731

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 0.2. Size:123K  onsemi
mjd5731t4g.pdfpdf_icon

MJD5731

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

Другие транзисторы: MJD45H11-1, MJD45H11T4, MJD47, MJD47-1, MJD47T4, MJD50, MJD50-1, MJD50T4, MJE340, MJD6036, MJD6036-1, MJD6036T4, MJD6039, MJD6039-1, MJD6039T4, MJE101, MJE102