MJD6036. Аналоги и основные параметры

Наименование производителя: MJD6036

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 20 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Ёмкость коллекторного перехода (Cc): 200 pf

Статический коэффициент передачи тока (hFE): 1000

Корпус транзистора: TO251

 Аналоги (замена) для MJD6036

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MJD6036 даташит

 0.1. Size:270K  motorola
 mjd6036r mjd6039.pdf pdf_icon

MJD6036

Order this document MOTOROLA by MJD6036/D SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 Complementary Darlington PNP MJD6039 Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages SILICON in applications such as switching regulators, convertors, and power amplifiers. POWER TRANSISTORS Lead Formed for Su

 8.1. Size:178K  onsemi
 mjd6039t4g.pdf pdf_icon

MJD6036

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S

 8.2. Size:178K  onsemi
 njvmjd6039t4g.pdf pdf_icon

MJD6036

MJD6039, NJVMJD6039T4G Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or http //onsemi.com driver stages in applications such as switching regulators, convertors, and power amplifiers. SILICON Features POWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES, (No S

 8.3. Size:199K  inchange semiconductor
 mjd6039.pdf pdf_icon

MJD6036

isc Silicon NPN Darlington Power Transistor MJD6039 DESCRIPTION Collector Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain- h = 500(Min)@I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a

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Другие транзисторы: MJD45H11T4, MJD47, MJD47-1, MJD47T4, MJD50, MJD50-1, MJD50T4, MJD5731, 2SC1815, MJD6036-1, MJD6036T4, MJD6039, MJD6039-1, MJD6039T4, MJE101, MJE102, MJE103