Справочник транзисторов. MJD6039-1

 

Биполярный транзистор MJD6039-1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJD6039-1
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 100 pf
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: TO252

 Аналоги (замена) для MJD6039-1

 

 

MJD6039-1 Datasheet (PDF)

 7.1. Size:270K  motorola
mjd6036r mjd6039.pdf

MJD6039-1
MJD6039-1

Order this documentMOTOROLAby MJD6036/DSEMICONDUCTOR TECHNICAL DATANPNMJD6036Complementary Darlington PNPMJD6039Power TransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output or driver stagesSILICONin applications such as switching regulators, convertors, and power amplifiers.POWER TRANSISTORS Lead Formed for Su

 7.2. Size:178K  onsemi
mjd6039t4g.pdf

MJD6039-1
MJD6039-1

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 7.3. Size:178K  onsemi
njvmjd6039t4g.pdf

MJD6039-1
MJD6039-1

MJD6039, NJVMJD6039T4GDarlington PowerTransistorsDPAK For Surface Mount ApplicationsDesigned for general purpose power and switching such as output orhttp://onsemi.comdriver stages in applications such as switching regulators, convertors,and power amplifiers.SILICON FeaturesPOWER TRANSISTORS Lead Formed for Surface Mount Applications in Plastic Sleeves 4 AMPERES,(No S

 7.4. Size:199K  inchange semiconductor
mjd6039.pdf

MJD6039-1
MJD6039-1

isc Silicon NPN Darlington Power Transistor MJD6039DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)High DC Current Gain-: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose switching and amplifierapplicationsABSOLUTE MAXIMUM RATINGS(T =25)a

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