Биполярный транзистор MJE171 Даташит. Аналоги
Наименование производителя: MJE171
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO126
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MJE171 Datasheet (PDF)
mje170 mje171 mje172.pdf

MJE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE170 - 60 V: MJE171 - 80 V: MJE172 - 100 VVCEO Collector-Emitter Voltage : MJE170 - 40 V: MJE171 - 60
mje170 mje171 mje172 mje180 mje181 mje182.pdf

MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M
mje170 mje171 mje172.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mje171.pdf

isc Silicon PNP Power Transistor MJE171DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -60VDC Current Gain: h = 30(Min) @ I = -0.5 AFE C= 12(Min) @ I = -1.5 ACComplement to the NPN MJE181Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow power audio amplifier applications.Low current hig
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: CJ818B | TIX880 | 2N1223 | BF397 | 2SA1338-7 | 2N1377 | 2N123A
History: CJ818B | TIX880 | 2N1223 | BF397 | 2SA1338-7 | 2N1377 | 2N123A



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