MJE171. Аналоги и основные параметры

Наименование производителя: MJE171

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 12 W

Макcимально допустимое напряжение коллектор-база (Ucb): 80 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V

Макcимальный постоянный ток коллектора (Ic): 3 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 50 MHz

Ёмкость коллекторного перехода (Cc): 60 pf

Статический коэффициент передачи тока (hFE): 50

Корпус транзистора: TO126

 Аналоги (замена) для MJE171

- подборⓘ биполярного транзистора по параметрам

 

MJE171 даташит

 ..1. Size:49K  fairchild semi
 mje170 mje171 mje172.pdf pdf_icon

MJE171

MJE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage MJE170 - 60 V MJE171 - 80 V MJE172 - 100 V VCEO Collector-Emitter Voltage MJE170 - 40 V MJE171 - 60

 ..2. Size:82K  onsemi
 mje170 mje171 mje172 mje180 mje181 mje182.pdf pdf_icon

MJE171

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN) Preferred Device Complementary Plastic Silicon Power Transistors http //onsemi.com The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. 3 AMPERES Features POWER TRANSISTORS Collector-Emitter Sustaining Voltage - COMPLEMENTARY SILICON VCEO(sus) = 40 Vdc - M

 ..3. Size:168K  onsemi
 mje170 mje171 mje172.pdf pdf_icon

MJE171

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..4. Size:213K  inchange semiconductor
 mje171.pdf pdf_icon

MJE171

isc Silicon PNP Power Transistor MJE171 DESCRIPTION Collector Emitter Sustaining Voltage V = CEO(SUS) -60V DC Current Gain h = 30(Min) @ I = -0.5 A FE C = 12(Min) @ I = -1.5 A C Complement to the NPN MJE181 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low power audio amplifier applications. Low current hig

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE15031, MJE16002, MJE16004, MJE16106, MJE16204, MJE1660, MJE1661, MJE170, 2SC828, MJE172, MJE180, MJE18002, MJE18004, MJE18006, MJE18008, MJE181, MJE182