Биполярный транзистор MJE172 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE172
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 12 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 60 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO126
MJE172 Datasheet (PDF)
mje172 mje182.pdf
MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon Epitaxial Planar, complementarytransistors in Jedec SOT-32 plastic package.They are designed for low power audio amplifier12and low current, high speed switching3applicatio
mje170 mje171 mje172.pdf
MJE170/171/172Low Power Audio Amplifier Low Current, High Speed Switching ApplicationsTO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage : MJE170 - 60 V: MJE171 - 80 V: MJE172 - 100 VVCEO Collector-Emitter Voltage : MJE170 - 40 V: MJE171 - 60
mje170 mje171 mje172 mje180 mje181 mje182.pdf
MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Preferred Device Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - M
mje170 mje171 mje172.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
mje172.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJE172 DESCRIPTION CollectorEmitter Sustaining Voltage : VCEO(SUS) = -80 V DC Current Gain : hFE = 30(Min) @ IC= -0.5 A = 12(Min) @ IC= -1.5 A Complement to Type MJE182 APPLICATIONS Low power audio amplifier Low current high speed switching applications ABSOLUTE MAXIMUM R
brmje172d.pdf
BRMJE172D Rev.D Dec.-2015 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features .high speed switching. / Applications Low power audio amplifier, Low current, high speed switching applications.
mje172-mje182.pdf
MJE172MJE182COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type)are silicon epitaxial planar, complementarytransistors in Jedec SOT-32 plastic package, theyare designed for low power audio amplifier andlow current, high speed switching applications.123SOT-3
mje172g.pdf
MJE170, MJE171, MJE172(PNP), MJE180, MJE181,MJE182 (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS Collector-Emitter Sustaining Voltage -COMPLEMENTARY SILICONVCEO(sus) = 40 Vdc - MJE170, MJE180= 60
mje170g mje171g mje172g mje180g mje181g mje182g.pdf
MJE170G, MJE171G,MJE172G (PNP), MJE180G,MJE181G, MJE182G (NPN)Complementary PlasticSilicon Power Transistorshttp://onsemi.comThe MJE170/180 series is designed for low power audio amplifierand low current, high speed switching applications.3 AMPERESFeaturesPOWER TRANSISTORS High DC Current GainCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product40 - 60 -
mje170-mje172.pdf
MJE170 / MJE171 / MJE172 PNP General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product TO-126 A suffix of -C specifies halogen and lead free FEATURES Low frequency amplifier EmitterCollector Low current Base High speed switching applications ABEF CNH LMK DJGMillimeter MillimeterREF. REF.Min. Max. M
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050