Справочник транзисторов. MJE2011

 

Биполярный транзистор MJE2011 Даташит. Аналоги


   Наименование производителя: MJE2011
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 80 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO126
 

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MJE2011 Datasheet (PDF)

 9.1. Size:255K  motorola
 mje200re.pdf pdf_icon

MJE2011

Order this documentMOTOROLAby MJE200/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE200Plastic TransistorsPNP. . . designed for low voltage, lowpower, highgain audio amplifier applications.*MJE210 CollectorEmitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc*Motorola Preferred Device High DC Current Gain hFE = 7

 9.2. Size:42K  fairchild semi
 mje200.pdf pdf_icon

MJE2011

MJE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

 9.3. Size:115K  onsemi
 mje200 mje210.pdf pdf_icon

MJE2011

MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE

 9.4. Size:164K  onsemi
 mje200g mje210g.pdf pdf_icon

MJE2011

MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... MJE18006 , MJE18008 , MJE181 , MJE182 , MJE1909 , MJE200 , MJE201 , MJE2010 , 2SC5200 , MJE202 , MJE2020 , MJE2021 , MJE203 , MJE204 , MJE205 , MJE2050 , MJE205K .

History: BU326A-6 | TIP131 | TIP126 | ECG2360 | BD450 | KSA1381C | MMBTA56LT1

 

 
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