Биполярный транзистор MJE204 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE204
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO220
MJE204 Datasheet (PDF)
mje200re.pdf
Order this documentMOTOROLAby MJE200/DSEMICONDUCTOR TECHNICAL DATANPNComplementary Silicon Power*MJE200Plastic TransistorsPNP. . . designed for low voltage, lowpower, highgain audio amplifier applications.*MJE210 CollectorEmitter Sustaining Voltage VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc*Motorola Preferred Device High DC Current Gain hFE = 7
mje200.pdf
MJE200Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) Complement to MJE210TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V
mje200 mje210.pdf
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
mje200g mje210g.pdf
MJE200G (NPN),MJE210G (PNP)Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES High DC Current GainPOWER TRANSISTORS Low Collector-Emitter Saturation VoltageCOMPLEMENTARY SILICON High Current-Gain - Bandwidth Product Annular Construc
mje200g.pdf
MJE200 - NPN,MJE210 - PNPPreferred Device Complementary SiliconPower Plastic TransistorsThese devices are designed for low voltage, low-power, high-gainaudio amplifier applications.http://onsemi.comFeatures5.0 AMPERES Collector-Emitter Sustaining Voltage -POWER TRANSISTORSVCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc High DC Current Gain -COMPLEMENTARY SILICONhFE
mje200.pdf
isc Silicon NPN Power Transistor MJE200DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 25V(Min)CEO(SUS)DC Current Gain-: h = 70(Min) @ I = 500mAFE CLow Collector-Emitter Saturation Voltage-: VCE(sat)= 0.3V(Max)@ I = 500mACHigh Current-GainBandwidth ProductfT= 65MHz(Min) @ I = 100mACMinimum Lot-to-Lot variations for robust deviceperformance and
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050