Справочник транзисторов. MJE3054

 

Биполярный транзистор MJE3054 Даташит. Аналоги


   Наименование производителя: MJE3054
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 90 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 55 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 4 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Статический коэффициент передачи тока (hfe): 25
   Корпус транзистора: TO220
 

 Аналог (замена) для MJE3054

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MJE3054 Datasheet (PDF)

 8.1. Size:129K  motorola
mje2955t mje3055t mje2955t.pdfpdf_icon

MJE3054

Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in generalpurpose amplifier and switching applications.*Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

 8.2. Size:59K  st
mje2955t mje3055t.pdfpdf_icon

MJE3054

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

 8.3. Size:36K  fairchild semi
mje3055t.pdfpdf_icon

MJE3054

MJE3055TGeneral Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

 8.4. Size:135K  onsemi
mje3055tg.pdfpdf_icon

MJE3054

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

Другие транзисторы... MJE2901T , MJE2955 , MJE2955K , MJE2955T , MJE29A , MJE29B , MJE29C , MJE30 , TIP2955 , MJE3055 , MJE3055K , MJE3055T , MJE30A , MJE30B , MJE30C , MJE31 , MJE31A .

History: SD5109F | CL2102 | 2SC1087 | DMC26106

 

 
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