Order this documentMOTOROLAby MJE2955T/DSEMICONDUCTOR TECHNICAL DATAPNP*MJE2955TComplementary Silicon PlasticNPN*MJE3055TPower Transistors. . . designed for use in generalpurpose amplifier and switching applications.*Motorola Preferred Device DC Current Gain Specified to 10 Amperes High Current Gain Bandwidth Product 10 AMPERE

MJE2955TMJE3055TCOMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPNtransistor in Jedec TO-220 package. It isintended for power switching circuits andgeneral-purpose amplifiers. The complementary 32PNP type is MJE2955T.1TO-220INTERNAL SCHEMATIC DIA

MJE3055TGeneral Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

MJE2955T (PNP),MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. www.onsemi.comFeatures10 AMPERE High Current Gain - Bandwidth ProductCOMPLEMENTARY SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS60 VOLTS - 75 WATTSMAXIMUM RATINGSRating

UNISONIC TECHNOLOGIES CO., LTD MJE3055T NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. Lead-free: MJE3055TL Halogen-free: MJE3055TG ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Plating Halogen Free 1 2 3MJE3055T-TA3-T MJE3055TL

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS MJE2955T PNPMJE3055T NPNTO-220Plastic PackageWith excellent Safe Operating Area, ideal for Hi-Fi Amplifier and Switching Regulator ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITVCEO Collector Emitter Voltage 60 VCollector Base Voltage VCB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055T DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955T APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

MJE2955T (PNP)MJE3055T (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications. http://onsemi.comFeatures10 AMPERE DC Current Gain Specified to 10 ACOMPLEMENTARY SILICON High Current Gain - Bandwidth Product -POWER TRANSISTORSfT = 2.0 MHz (Min) @ IC 60 VOLTS - 75 WATTS= 500 mAd

Spec. No. : HE6737HI-SINCERITYIssued Date : 1993.09.24Revised Date : 2004.11.19MICROELECTRONICS CORP.Page No. : 1/4HMJE3055TNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMJE3055T is designed for general purpose of amplifier and switchingapplications.TO-220Absolute Maximum Ratings (TA=25C) Maximum TemperatureStorage Temperature ..................................

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors TO-220-3L MJE3055 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOTR 3. EMITTER General Purpose and Switching ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitt

MJE3055(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features GENERAL PURPOSE AND SWITCHING APPLICATIONS. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Curr

MJE3055Plastic-Encapsulate Power Transistors1231. BASE2. COLLECTORTO-2203. EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)ValueRating SymbolUnitCollector-Emitter Voltage V 60CEO VdcCollector-Base Voltage VCBO70 VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current (DC) IC(DC)10 AdcTotal Device Disspation T =25 CC 75WPDDerate above 25 C0.6W/ C-55

MJE3055A(NPN)RoHS MJE2955A(PNP)SEMICONDUCTOR RoHS Nell High Power Products Complementary Silicon power transistors(10A / 60V / 75W)FEATURES Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 AdcExcellent safe operating area 123TO-220AB DESCRIPTI

isc Silicon NPN Power Transistor MJE3055ATDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 150-260@I = 1AFE CBandwidth Product-: f = 2MHz(Min)@I = 500 mAT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingapp

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE3055 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) High DC Current Gain- : hFE= 20-100@IC= 4A Complement to Type MJE2955 APPLICATIONS Designed for use in general-purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PAR