Биполярный транзистор MJE3740 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE3740
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO220
MJE3740 Datasheet (PDF)
mje371re.pdf
Order this documentMOTOROLAby MJE371/DSEMICONDUCTOR TECHNICAL DATAMJE371Plastic Medium-Power PNP4 AMPERESilicon TransistorsPOWER TRANSISTORPNP SILICON. . . designed for use in generalpurpose amplifier and switching circuits. Recom-40 VOLTSmended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry40 WATTScircuitry. DC Current Gain hFE
mje371 mje521.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
mje371g.pdf
MJE371GPlastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures High DC Current Gain4 AMPERES MJE371 is Complementary to NPN MJE521POWER TRANSISTOR These Devices are Pb-Free
mje371-d.pdf
MJE371Plastic Medium-PowerPNP Silicon TransistorThis device is designed for use in general-purpose amplifier andswitching circuits. Recommended for use in 5 to 20 Watt audioamplifiers utilizing complementary symmetry circuitry.http://onsemi.comFeatures DC Current Gain - hFE = 40 (Min) @ IC4 AMPERES= 1.0 AdcPOWER TRANSISTOR MJE371 is Complementary to NPN MJE521PNP
mje371.pdf
isc Silicon PNP Power Transistor MJE371DESCRIPTIONCollectorEmitter Sustaining Voltage: V =CEO(SUS) -40VDC Current Gain: h = 40(Min) @ I = -1AFE CComplement to Type MJE521Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier and switchingcircuits.Recommended for u
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050