Биполярный транзистор MJE800 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJE800
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 750
Корпус транзистора: TO126
MJE800 Datasheet (PDF)
mje800.pdf
MJE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Coll
mje800 mje801 mje802 mje803.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for generalpurpose amplifier and lowspeed switching applications PINNING (see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to
mje800.pdf
isc Silicon NPN Darlington Power Transistor MJE800DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5 AFE C= 100(Min) @ I = 4ACComplement to Type MJE700Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speeds
mje800g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
mje800t.pdf
isc Silicon NPN Darlington Power Transistor MJE800TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE700TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed
mje802 mje803.pdf
MJE802MJE803SILICON NPN POWER DARLINGTON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTION The MJE802 and MJE803 are siliconepitaxial-base NPN transistors in monolithicDarlington configuration and are mounted inJedec SOT-32 plastic package.They are intendedfor use in medium power linear and switchingapplications.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE M
mje803g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
mje802g.pdf
MJE700, MJE702, MJE703(PNP) - MJE800, MJE802,MJE803 (NPN)Plastic DarlingtonComplementary Siliconhttp://onsemi.comPower TransistorsThese devices are designed for general-purpose amplifier and4.0 AMPERElow-speed switching applications.DARLINGTON POWERFeaturesTRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON= 2.0 Adc40 WATT Monolit
mje802.pdf
isc Silicon NPN Darlington Power Transistor MJE802DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE702Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw
mje803.pdf
isc Silicon NPN Darlington Power Transistor MJE803DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit
mje801.pdf
isc Silicon NPN Darlington Power Transistor MJE801DESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE701Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedswit
mje802t.pdf
isc Silicon NPN Darlington Power Transistor MJE802TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 1.5AFE C= 100(Min) @ I = 4ACComplement to Type MJE702TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speed
mje803t.pdf
isc Silicon NPN Darlington Power Transistor MJE803TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 80 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE703TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw
mje801t.pdf
isc Silicon NPN Darlington Power Transistor MJE801TDESCRIPTIONCollectorEmitter Breakdown Voltage: V = 60 V(BR)CEODC Current Gain: h = 750(Min) @ I = 2AFE C= 100(Min) @ I = 4ACComplement to Type MJE701TMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier and low-speedsw
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
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