MJE800T. Аналоги и основные параметры

Наименование производителя: MJE800T

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 50 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 4 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: TO220

 Аналоги (замена) для MJE800T

- подборⓘ биполярного транзистора по параметрам

 

MJE800T даташит

 ..1. Size:212K  inchange semiconductor
 mje800t.pdf pdf_icon

MJE800T

isc Silicon NPN Darlington Power Transistor MJE800T DESCRIPTION Collector Emitter Breakdown Voltage V = 60 V (BR)CEO DC Current Gain h = 750(Min) @ I = 1.5A FE C = 100(Min) @ I = 4A C Complement to Type MJE700T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed

 8.1. Size:51K  fairchild semi
 mje800.pdf pdf_icon

MJE800T

MJE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors High DC Current Gain hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to MJE700/701/702/703 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Equivalent Circuit C Symbol Parameter Value Units VCBO Coll

 8.2. Size:126K  onsemi
 mje800g.pdf pdf_icon

MJE800T

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon http //onsemi.com Power Transistors These devices are designed for general-purpose amplifier and 4.0 AMPERE low-speed switching applications. DARLINGTON POWER Features TRANSISTORS High DC Current Gain - hFE = 2000 (Typ) @ IC COMPLEMENTARY SILICON = 2.0 Adc 40 WATT Monolit

 8.3. Size:118K  inchange semiconductor
 mje800 mje801 mje802 mje803.pdf pdf_icon

MJE800T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE800/801/802/803 DESCRIPTION With TO-126 package Complement to type MJE700/701/702/703 High DC current gain DARLINGTON APPLICATIONS Designed for general purpose amplifier and low speed switching applications PINNING (see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: MJE703T, MJE710, MJE711, MJE712, MJE720, MJE721, MJE722, MJE800, D882, MJE801, MJE801T, MJE802, MJE802T, MJE803, MJE803T, MJE8500, MJE8501