MJH11020 - описание и поиск аналогов

 

Аналоги MJH11020. Основные параметры


   Наименование производителя: MJH11020
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 3 MHz
   Ёмкость коллекторного перехода (Cc): 400 pf
   Статический коэффициент передачи тока (hfe): 400
   Корпус транзистора: TO218

 Аналоги (замена) для MJH11020

   - подбор ⓘ биполярного транзистора по параметрам

 

MJH11020 даташит

 ..1. Size:212K  motorola
 mjh11017 mjh11018 mjh11019 mjh11020 mjh11021 mjh11022.pdf pdf_icon

MJH11020

Order this document MOTOROLA by MJH11017/D SEMICONDUCTOR TECHNICAL DATA MJH10012 (See MJ10012) Complementary Darlington PNP Silicon Power Transistors * MJH11017 . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* High DC Current Gain @ 10 Adc hFE = 400 Min (All Types) Collector Emitter Sustaining Vo

 0.1. Size:141K  onsemi
 mjh11020g.pdf pdf_icon

MJH11020

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 7.1. Size:141K  onsemi
 mjh11022g.pdf pdf_icon

MJH11020

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

 7.2. Size:141K  onsemi
 mjh11021g.pdf pdf_icon

MJH11020

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington http //onsemi.com Silicon Power Transistors These devices are designed for use as general purpose amplifiers, 15 AMPERE DARLINGTON low frequency switching and motor control applications. COMPLEMENTARY SILICON Features POWER TRANSISTORS High DC Current Gain @ 10 Adc hFE = 400 Min (

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы... MJF47 , MJF6107 , MJF6388 , MJF6688 , MJH10012 , MJH11017 , MJH11018 , MJH11019 , A1013 , MJH11021 , MJH11022 , MJH12004 , MJH13090 , MJH13091 , MJH16002 , MJH16002A , MJH16004 .

 

 
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