Биполярный транзистор MJW16206 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MJW16206
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 500 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 8 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 350 pf
Статический коэффициент передачи тока (hfe): 5
Корпус транзистора: TO247
MJW16206 Datasheet (PDF)
mjw16206.pdf
Order this documentMOTOROLAby MJW16206/DSEMICONDUCTOR TECHNICAL DATAMJW16206SCANSWITCHNPN Bipolar Power Deflection TransistorsPOWER TRANSISTORSFor High and Very High Resolution CRT Monitors12 AMPERES1200 VOLTS VCESThe MJF16206 and the MJW16206 are stateoftheart SWITCHMODE bipolar50 and 150 WATTSpower transistors. They are specifically designed for use i
mjw16206.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJW16206 DESCRIPTION With TO-247 package High voltage ,high speed Low collector saturation voltage APPLICATIONS Designed for use in horizontal deflection circuits for high and every high resolution, monochrome and color CRT monitors PINNING PIN DESCRIPTION1 Base Collector;connected to
mjw16212.pdf
Order this documentMOTOROLAby MJW16212/DSEMICONDUCTOR TECHNICAL DATAMJF18002 (See MJE18002)MJF18004 (See MJE18004)MJF18006 (See MJE18006)MJF18008 (See MJE18008)SCANSWITCHNPN Bipolar Power Deflection TransistorMJW16212*For High and Very High Resolution MonitorsThe MJW16212 is a stateoftheart SWITCHMODE bipolar power transistor. It*Motorola Preferred Devic
mjw16010.pdf
Order this documentMOTOROLAby MJW16010A/DSEMICONDUCTOR TECHNICAL DATAMJW16010A*Designer's Data Sheet*Motorola Preferred DeviceNPN Silicon Power TransistorsPOWER TRANSISTORS1 kV SWITCHMODE Series15 AMPERES500 VOLTSThese transistors are designed for highvoltage, highspeed, power switching in125 AND 175 WATTSinductive circuits where fall time is critical. The
mjw16010.pdf
isc Silicon NPN Power Transistor MJW16010DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critica
mjw16010a.pdf
isc Silicon NPN Power Transistor MJW16010ADESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Sustaining Voltage-: V = 500V(Min)CEO(SUS)Wide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage, high-speed,power switching ininductive circuits where fall time is critic
mjw16018.pdf
isc Silicon NPN Power Transistor MJW16018DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage ,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ularly suited for lin
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050