Биполярный транзистор MMBR931LT1 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBR931LT1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 10 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 5 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1000 MHz
Ёмкость коллекторного перехода (Cc): 0.5 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SOT23
Аналоги (замена) для MMBR931LT1
MMBR931LT1 Datasheet (PDF)
mmbr931l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR931LT1/DThe RF LineNPN SiliconMMBR931LT1High-Frequency TransistorDesigned primarily for use in lowpower amplifiers to 1.0 GHz. Ideal forpagers and other battery operated systems where power consumption iscritical. Available in tape and reel packaging options:T1 suffix = 3,000 units per reelRF AMPLIFIER
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC
mmbr951 mrf951 mrf957 mrf9511.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure
mps911 mmbr911lt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR911LT1/DThe RF LineMMBR911LT1NPN SiliconMPS911High-Frequency TransistorsDesigned for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asIC = 60 mAthe popular TO226AA (TO92) package. This Motorola series of smallsig
mmbr920l.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1, T3High-Frequency Transistor. . . designed for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB
mmbr920 .pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure
mmbr911.pdf
MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit /
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050