Справочник транзисторов. MMBT2222

 

Биполярный транзистор MMBT2222 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: MMBT2222

Маркировка: 1AM_1B

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.35 W

Макcимально допустимое напряжение коллектор-база (Ucb): 75 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 175 °C

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hfe): 100

Корпус транзистора: SOT23

Аналоги (замена) для MMBT2222

 

 

MMBT2222 Datasheet (PDF)

0.1. mmbt2222awt1rev0.pdf Size:72K _motorola

MMBT2222
MMBT2222

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222AWT1/DPreliminary InformationMMBT2222AWT1General Purpose TransistorMotorola Preferred DeviceNPN SiliconThese transi

0.2. mmbt2222lt1rev0d.pdf Size:181K _motorola

MMBT2222
MMBT2222

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BAS

 0.3. mmbt2222.pdf Size:253K _motorola

MMBT2222
MMBT2222

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT2222LT1/DMMBT2222LT1General Purpose Transistors*MMBT2222ALT1COLLECTORNPN Silicon3*Motorola Preferred Device1BAS

0.4. mmbt2222a 1.pdf Size:52K _philips

MMBT2222
MMBT2222

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT2222ANPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear amplification.

 0.5. mmbt2222a.pdf Size:63K _st

MMBT2222
MMBT2222

MMBT2222ASMALL SIGNAL NPN TRANSISTORPRELIMINARY DATAType MarkingMMBT2222A M22 SILICON EPITAXIAL PLANAR NPNTRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGEFOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY TYPE ISMMBT2907AAPPLICATIONS SOT-23 WELL SUITABLE FOR PORTABLEEQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITHHIGH GAIN AND LOW SATURATIONVOL

0.6. pn2222a mmbt2222a pzt2222a.pdf Size:174K _fairchild_semi

MMBT2222
MMBT2222

August 2010PN2222A / MMBT2222A / PZT2222ANPN General Purpose AmplifierFeatures This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value U

0.7. mmbt2222a.pdf Size:211K _fairchild_semi

MMBT2222
MMBT2222

PN2222A MMBT2222A PZT2222ACCEECBTO-92 SOT-23 SOT-223BMark:1PEBCNPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from process 19.Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collecto

0.8. mmbt2222.pdf Size:48K _fairchild_semi

MMBT2222
MMBT2222

MMBT2222NPN General Purpose Amplifier Sourced from process 19.CESOT-23BMark: 1BAbsolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 0.6 ATJ, TSTG Operating and Storage Junction Temperature Range -55

0.9. mmbt2222at.pdf Size:136K _fairchild_semi

MMBT2222
MMBT2222

September 2008MMBT2222ATNPN Epitaxial Silicon TransistorFeaturesC General purpose amplifier transistor.E Ultra-Small Surface Mount Package for all types.B General purpose switching & amplification application Marking : A02 SOT-523FAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitVCBO Collector-Base Voltage 75 VVCEO Colle

0.10. mmbt2222ak.pdf Size:121K _fairchild_semi

MMBT2222
MMBT2222

MMBT2222AKNPN Epitaxial Silicon TransistorGeneral Purpose TransistorMarking31PK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 75 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Power Dissipation 350 mW

0.11. mmbt2222a.pdf Size:133K _diodes

MMBT2222
MMBT2222

MMBT2222ANPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Complementary PNP Type Available (MMBT2907A) Case Material: Molded Plastic, Green Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Ideal for Low Power Am

0.12. mmbt2222alp4.pdf Size:149K _diodes

MMBT2222
MMBT2222

MMBT2222ALP440V NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Low Collector-Emitter Saturation Voltage, VCE(sat) Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound. Ultra-Small Leadless Surface Mount Package UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moistu

0.13. mmbt2222at.pdf Size:176K _diodes

MMBT2222
MMBT2222

MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT2907AT) CDim Min Max Typ Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) A 0.15 0.30 0.22TOP VIEW B C "Green" Device (Note 3 and 4) B 0.75 0.85 0.80B EC 1.45 1.75 1.60GMechanical

0.14. smbt2222a mmbt2222a.pdf Size:81K _infineon

MMBT2222
MMBT2222

SMBT2222A/MMBT2222ANPN Silicon Switching Transistor Low collector-emitter saturation voltage23 Complementary type: SMBT2907AW (PNP)1 Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageSMBT2222A/MMBT2222A s1P SOT231 = B 2 = E 3 = CMaximum RatingsParameter Symbol Value Unit40 VCollector-emitter voltage VCE

0.15. mmbt2222at sot-523.pdf Size:222K _mcc

MMBT2222
MMBT2222

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MMBT2222ATMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN General Capable of 150mWatts of Power DissipationPurpose Amplifier Operating and Storage Junction T

0.16. mmbt2222a sot-23.pdf Size:220K _mcc

MMBT2222
MMBT2222

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT2222AMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation, IC=600mANPN General Operating and Storage Junction Temperature: -55C to +150C Thermal resistance,Junction to Ambient:500oC/

0.17. nsvmmbt2222att1g.pdf Size:123K _onsemi

MMBT2222
MMBT2222

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.18. mmbt2222awt1-d.pdf Size:121K _onsemi

MMBT2222
MMBT2222

MMBT2222AWT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1MAXIMUM RATINGSBASERating Symbo

0.19. mmbt2222att1g.pdf Size:123K _onsemi

MMBT2222
MMBT2222

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.20. mmbt2222att1-d.pdf Size:114K _onsemi

MMBT2222
MMBT2222

MMBT2222ATT1General Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.http://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGS (TA = 25

0.21. mmbt2222am3t5g.pdf Size:125K _onsemi

MMBT2222
MMBT2222

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.COLLECTORFeatures3 Reduce

0.22. mmbt2222alt1g.pdf Size:134K _onsemi

MMBT2222
MMBT2222

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

0.23. mmbt2222am3.pdf Size:168K _onsemi

MMBT2222
MMBT2222

MMBT2222AM3T5GNPN General PurposeTransistorThe MMBT2222AM3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeamplifier applications and is housed in the SOT-723 surface mounthttp://onsemi.compackage. This device is ideal for low-power surface mountapplications where board space is at a premium.FeaturesCOLLECTOR3 Reduce

0.24. mmbt2222awt3g.pdf Size:129K _onsemi

MMBT2222
MMBT2222

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

0.25. mmbt2222lt1g.pdf Size:134K _onsemi

MMBT2222
MMBT2222

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

0.26. mmbt2222alt3g.pdf Size:134K _onsemi

MMBT2222
MMBT2222

MMBT2222L, MMBT2222AL,SMMBT2222ALGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique1Site and Control Change RequirementsBASE2MAXIMUM RATINGSEMITTERRating Symbo

0.27. mmbt2222lt1-alt1.pdf Size:126K _onsemi

MMBT2222
MMBT2222

MMBT2222LT1G,MMBT2222ALT1GGeneral Purpose TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO Vdc2MMBT2222LT1G 30MMBT2222ALT1G 40 EMITTERCollector-Base Voltage VCBO VdcMMBT2222LT1G 603MMBT2222ALT1G 75

0.28. mmbt2222awt1g.pdf Size:129K _onsemi

MMBT2222
MMBT2222

MMBT2222AWT1G,SMMBT2222AWT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.Features AEC-Q101 Qualified and PPAP CapableSC-70 S Prefix for Automotive and Other Applications Requiring Uni

0.29. mmbt2222att3g.pdf Size:123K _onsemi

MMBT2222
MMBT2222

MMBT2222ATT1G,NSVMMBT2222ATT1GGeneral Purpose TransistorNPN SiliconThese transistors are designed for general purpose amplifierhttp://onsemi.comapplications. They are housed in the SOT-416/SC-75 package whichis designed for low power surface mount applications.COLLECTOR3Features NSV Prefix for Automotive and Other Applications Requiring1Unique Site and Control Chang

0.30. mmbt2222a.pdf Size:295K _utc

MMBT2222
MMBT2222

UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE 3AMPLIFIER 12 FEATURES SOT-23* This device is for use as a medium power amplifier and switch requiring collector currents up to 600mA. 312SOT-323312SOT-523 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBT2222

0.31. mmbt2222w.pdf Size:1169K _no

MMBT2222
MMBT2222

0.32. mmbt2222q.pdf Size:251K _secos

MMBT2222
MMBT2222

MMBT2222QNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-89 1.BASED Dimensions In Millimeters Dimensions In Inches2.COLLECTORD1SymbolAMin Max Min Max 3.EMITTERA 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020FEATURESb1 0.360 0.560 0.014 0.022c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181b1Power d

0.33. mmbt2222a.pdf Size:278K _secos

MMBT2222
MMBT2222

MMBT2222ANPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESACOLLECTOR L Epitaxial Planar Die Construction333 Complementary PNP Type AvailableSTop ViewB(MMBT2907A)111 2 Ideal for Medium Power Amplification andBASE 2SwitchingV G2EMITTERCHJDKMAXIMUM

0.34. mmbt2222aw.pdf Size:1362K _secos

MMBT2222
MMBT2222

MMBT2222AW NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURE Complementary PNP Type Available(MMBT2907AW) AL Epitaxial Planar Die Construction 33 Ideal for Medium Power Amplification and Switching Top View C B11 22K EDMARKING CODE H JF GMM

0.35. mmbt2222at.pdf Size:809K _secos

MMBT2222
MMBT2222

MMBT2222AT NPN Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-523 Epitaxial Planar Die Construction Complementary PNP Type Available(MMBT2907FW) Ideal for Medium Power Amplification and Switching MARKING CODE 1P PACKAGE INFORMATION Package MPQ Leader Size Millim

0.36. mmbt2222agh.pdf Size:79K _zovie

MMBT2222
MMBT2222

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconHalogen-free typeLead free productCOLLECTOR33BASE1MMBT2222AGH 122SOT-23EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSChar

0.37. mmbt2222a.pdf Size:1250K _htsemi

MMBT2222
MMBT2222

MMBT2222ATRANSISTOR(NPN)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Current -C

0.38. mmbt2222.pdf Size:602K _htsemi

MMBT2222

MMBT2222TRANSISTOR(NPN)SOT23 FEATURES Genernal Purpose Amplifier MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 75 V CBO2. EMITTER V Collector-Emitter Voltage 30 V CEO3. COLLECTOR V Emitter-Base Voltage 6 V EBOIC Collector Current 600 mA P Collector Power Dissipation 250 mW CR Thermal R

0.39. mmbt2222.pdf Size:319K _gsme

MMBT2222
MMBT2222

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM2222 GM2222AMAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGM2222 GM2222A Collector-Emitter VoltageVCEO 30 40 Vdc-

0.40. mmmbt2222a sot-23.pdf Size:1000K _lge

MMBT2222
MMBT2222

MMBT2222A SOT-23 Transistor(NPN)SOT-231. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emit

0.41. mmbt2222.pdf Size:569K _wietron

MMBT2222
MMBT2222

MMBT2222MMBT2222A312SOT-23VCEOuWEITRONhttp://www.weitron.com.twMMBT2222MMBT2222AELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS-DC Current GainhFE(IC=0.1 mAdc, VCE=10 Vdc) 35-(IC=1.0 mAdc, VCE=10 Vdc) 50--(IC=10 mAdc, VCE=10 Vdc) 75-35(IC=10 mAdc, VCE=10 Vdc, TA=-

0.42. mmbt2222aw.pdf Size:407K _wietron

MMBT2222
MMBT2222

MMBT2222AW312SOT-323(SC-70)ValueVCEO150833T ,Tstg -55 to+150JMMBT2222AW=P1(1)u1. Pulse Test: Pulse Width 300us, Duty Cycle 2.0%WEITRONhttp://www.weitron.com.twMMBT2222AWELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICS(1)DC Current Gain-(IC=0.1 mAdc, VCE=10 Vdc)35-(

0.43. mmbt2222at.pdf Size:417K _wietron

MMBT2222
MMBT2222

MMBT2222ATCOLLECTORPlastic-Encapsulate Transistors33NPN Silicon 121BASEP b Lead(Pb)-FreeSC-892EMITTER (SOT-523F)MAXIMUM RATINGSValueRating SymbolUnit40Collector-Emitter Voltage VCEO Vdc75Collector-Base Voltage VCBOVdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteristics SymbolUnitMa

0.44. mmbt2222att1.pdf Size:357K _willas

MMBT2222
MMBT2222

FM120-M WILLASTHRUMMBT2222ATT1General Purpose T BARRIER RECTIFIERS -20V- 200VransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process dNPN Siliconeesign, excellent power dissipation offers better reverse l akage current and thermal resistance.SOD-123H Low profile surface mounted application in order

0.45. mmbt2222awt1.pdf Size:290K _willas

MMBT2222
MMBT2222

FM120-M WILLASTHRUMMBT2222AWT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VGeneral Purpose TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN Silic

0.46. mmbt2222-a-lt1.pdf Size:385K _willas

MMBT2222
MMBT2222

FM120-M WILLASTHRUMMBT2222(A)LT1FM1200-M General Purpose Transistors1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesNPN Batch process design, excellent power dissipation offersSilicon better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in orde

0.47. mmbt2222adw1t1.pdf Size:341K _willas

MMBT2222
MMBT2222

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

0.48. mmbt2222a.pdf Size:282K _shenzhen

MMBT2222
MMBT2222

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR (NPN) SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V

0.49. mmbt2222a.pdf Size:276K _cystek

MMBT2222
MMBT2222

Spec. No. : C203N3 Issued Date : 2002.05.11 CYStech Electronics Corp.Revised Date : 2010.11.12 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor MMBT2222ADescription The MMBT2222A is designed for using in driver stage of AF amplifier and general purpose switching application. High I , I = 0.6A. C(Max) C(Max) Low V , Typ. V = 0.2V at I /I = 500mA/

0.50. mmbt2222 sot-23.pdf Size:202K _can-sheng

MMBT2222
MMBT2222

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBT2222 TRANSISTOR (NPN) FEATURES Complimentary to MMBT2907 MARKING:1P MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-B

0.51. mmbt2222altg.pdf Size:146K _first_silicon

MMBT2222
MMBT2222

MMBT2222LTG,MMBT2222ALTGGeneral Purpose TransistorsFeaturesPackage outline Pb-Free Package May be Available. The G-Suffix Denotes a Pb-Free Lead Finish3Ordering Information1Device Package ShippingMMBT2222LTG SOT23 3000/Tape & Reel 2MMBT2222ALTG SOT23 3000/Tape & ReelSOT23Maximum RatingsRating Symbol 2222 2222A Unit3COLLECTORCollectorEmitter Vo

0.52. mmbt2222a.pdf Size:805K _kexin

MMBT2222
MMBT2222

D e s st sNPN TransistorsMMBT2222A (KMBT2222A)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.131 2 +0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.1 )1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collec

0.53. mmbt2222at.pdf Size:859K _kexin

MMBT2222
MMBT2222

SMD Type TransistorsNPN TransistorsMMBT2222AT (KMBT2222AT)SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features2 1 Small Package Complementary to MMBT2907AT30.30.05+0.10.5-0.11. Base2. Emitter3. Collecter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 75 Coll

0.54. mmbt2222a-g.pdf Size:141K _comchip

MMBT2222
MMBT2222

Small Signal TransistorMMBT2222A-G (NPN)RoHS DeviceFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Approx. weight: 0

0.55. mmbt2222a-hf.pdf Size:141K _comchip

MMBT2222
MMBT2222

Small Signal TransistorMMBT2222A-HF (NPN)RoHS DeviceHalogen FreeFeaturesSOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application.0.118(3.00)0.110(2.80)3Mechanical data 0.055(1.40)0.047(1.20) -Case: SOT-23, molded plastic. 1 20.079(2.00)0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026.0.006(0.15)0.003(0.08) -Ap

0.56. gstmmbt2222a.pdf Size:272K _globaltech_semi

MMBT2222
MMBT2222

GSTMMBT2222A NPN General Purpose Transistors Product Description Features This device is designed as a general purpose Lead(Pb)-Freeamplifier and switch. Packages & Pin Assignments GSTMMBT2222AF(SOT-23) Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Marking GSTMMBT2222AF SOT-23 1POrdering Information GS P/NGSTMMBT2222A FPb Fre

0.57. mmbt2222lt1.pdf Size:144K _wej

MMBT2222
MMBT2222

RoHS MMBT2222LT1SOT-23 TRANSISTORDescription SOT-23Dimensions(Unit:mm) Medium Power Amplifier. NPN Silicon Transistor.2.30.21.30.20.5Ref. hFE RANK0.5Ref.Features Large collector current:ICmax=600mA23 Low collector saturation voltage 1P enabling low voltage operation1 Complementary pair with . Type Name0.38Ref.MINO.1 0.01-0.101.EMITTER2.BASE

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