MMBT4250 datasheet и подбор замены

 9.1. Size:95K  motorola
 mmbt404a.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT404ALT1/D Chopper Transistor MMBT404ALT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318 08, STYLE 6 Rating Symbol Value Unit SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 35 Vdc Collector Base Voltage VCBO 40 Vdc Emitter Base Voltage VEB

 9.2. Size:301K  motorola
 mmbt4401.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4401LT1/D Switching Transistor MMBT4401LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.

 9.3. Size:301K  motorola
 mmbt4403.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4403LT1/D Switching Transistor MMBT4403LT1 COLLECTOR PNP Silicon 3 Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 40 Vdc SOT 23 (TO 236AB) Emitter Base Voltage V

 9.4. Size:62K  fairchild semi
 mmbt4400.pdf 

2N4400 MMBT4400 C E C TO-92 B B E SOT-23 Mark 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.

 9.5. Size:47K  fairchild semi
 mmbt4354.pdf 

MMBT4354 PNP General Purpose Amplifier This device is deisgned for use as general purpose amplifiers and 3 switch requiring collector currents to 500mA. Sourced from process 67. TN4033A for characteristics. 2 SOT-23 1 Mark 79 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter

 9.6. Size:166K  fairchild semi
 mmbt4403k.pdf 

November 2006 MMBT4403K tm PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -600 mA PC Collector Power Dis

 9.7. Size:162K  fairchild semi
 mmbt4401k.pdf 

November 2006 MMBT4401K tm NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 3

 9.8. Size:67K  fairchild semi
 2n4400 mmbt4400.pdf 

2N4400 MMBT4400 C E C TO-92 B B E SOT-23 Mark 83 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.

 9.9. Size:69K  fairchild semi
 2n4403 mmbt4403.pdf 

2N4403 MMBT4403 C E C TO-92 B SOT-23 B E Mark 2T PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage40V VEBO Emitter-Base Voltage 5.0

 9.10. Size:47K  fairchild semi
 mmbt4356.pdf 

MMBT4356 PNP General Purpose Amplifier 3 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500mA. Sourced from process 67. See TN4033A for characteristics. 2 SOT-23 1 Mark 82 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-E

 9.11. Size:463K  fairchild semi
 mmbt4355 pn4355.pdf 

PN4355 MMBT4355 C E C TO-92 B SOT-23 B E Mark 81 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 67. See TN4033A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO

 9.12. Size:95K  fairchild semi
 2n4124 mmbt4124.pdf 

2N4124 MMBT4124 C E TO-92 C B B SOT-23 E Mark ZC NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base Vo

 9.13. Size:81K  fairchild semi
 2n4126 mmbt4126.pdf 

2N4126 MMBT4126 C E C TO-92 B B SOT-23 E Mark ZF PNP General Purpose Amplifier This device is designed for general purpose amplifier and switch- ing applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 25 V VCBO Collector-Base

 9.14. Size:92K  fairchild semi
 2n4401 mmbt4401.pdf 

2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0

 9.15. Size:329K  diodes
 mmbt4403t.pdf 

MMBT4403T PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary NPN Type Available (MMBT4401T) Case Material Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity Level 1 per J-S

 9.16. Size:257K  diodes
 mmbt4401.pdf 

MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case material molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti

 9.17. Size:339K  diodes
 mmbt4126.pdf 

MMBT4126 25V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case Material Molded plastic, Green Molding Compound; Complementary NPN Type MMBT4124 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 &

 9.18. Size:324K  diodes
 mmbt4124.pdf 

MMBT4124 25V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 25V Case SOT23 IC = 200mA High Collector Current Case Material Molded Plastic, Green Molding Compound; Complementary PNP Type MMBT4126 UL Flammability Classification Rating 94V-0 Ideal for Medium Power Amplification and Switching Moisture Sensitivity Level 1 per J

 9.19. Size:176K  diodes
 mmbt4401t.pdf 

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22 TOP VIEW B C B 0.75 0.85 0.80 B E Mechanical Data C 1.45 1.75 1.60 G Case SOT-523 D 0.50

 9.20. Size:149K  diodes
 mmbt4403.pdf 

MMBT4403 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Type Available (MMBT4401) UL Flammability Rating 94V-0 Ideal for Medium Power Amplification and Switching Case material molded Plastic Green Compound Totally Lead-Free & Fully RoHS compliant (Notes

 9.21. Size:184K  mcc
 mmbt4401.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Operating and Storage Junction Temperatures -55 to 150 Purpose Amplifier IC=600mA Marking 2X/M4A Lead Fre

 9.22. Size:200K  mcc
 mmbt4403 sot-23.pdf 

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4403 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Operating and Storage Junction Temperatures -55 to 150 Capable of 350mWatts of Power Dissipation PNP General Surface Mount SOT-23 Package Ic=-600mA Purpose Amplifier Lead Free Finish/RoHS Compli

 9.23. Size:154K  onsemi
 mmbt4126lt1.pdf 

MMBT4126LT1G General Purpose Transistor PNP Silicon Features http //onsemi.com Moisture Sensitivity Level 1 ESD Rating - Human Body Model > 4000 V - Machine Model > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Ba

 9.24. Size:181K  onsemi
 mmbt4403m3t5g.pdf 

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.25. Size:183K  onsemi
 mmbt4126lt1g.pdf 

MMBT4126LT1G General Purpose Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating - Human Body Model > 4000 V - Machine Model > 400 V COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO -25 Vdc Collector-Base

 9.26. Size:111K  onsemi
 mmbt4401m3.pdf 

MMBT4401M3T5G NPN Switching Transistor The MMBT4401M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO

 9.27. Size:125K  onsemi
 mmbt4403m3-d.pdf 

MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO

 9.28. Size:155K  onsemi
 mmbt4401lt1.pdf 

MMBT4401LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 6

 9.29. Size:152K  onsemi
 mmbt4401lt1g.pdf 

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

 9.30. Size:178K  onsemi
 mmbt4403wt1.pdf 

MMBT4403WT1G Switching Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO --40 Vdc 3 Collector -- Base

 9.31. Size:381K  onsemi
 2n4401bu 2n4401tf 2n4401tfr 2n4401ta 2n4401tar mmbt4401.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.32. Size:149K  onsemi
 mmbt4403lt1g.pdf 

MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit

 9.33. Size:147K  onsemi
 mmbt4401wt1g.pdf 

MMBT4401WT1G Switching Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

 9.34. Size:162K  onsemi
 mmbt4403l smmbt4403l.pdf 

MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-Em

 9.35. Size:89K  onsemi
 mmbt489lt1g.pdf 

MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in www.onsemi.com Portable Applications 30 VOLTS, 2.0 AMPERES Features NPN TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) 1 Rating Symbol Max Unit BASE Collector-Emitter Voltage VCEO 30 Vdc Collector-Base

 9.36. Size:151K  onsemi
 mmbt4403lt1.pdf 

MMBT4403LT1G Switching Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -40 Vdc Collector-Base Voltage VCBO -40 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Collector Current - Continuous I

 9.37. Size:121K  onsemi
 mmbt489lt1-d.pdf 

MMBT489LT1G High Current Surface Mount NPN Silicon Switching Transistor for Load Management in http //onsemi.com Portable Applications 30 VOLTS, 2.0 AMPERES Features NPN TRANSISTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) 1 Rating Symbol Max Unit BASE Collector-Emitter Voltage VCEO 30 Vdc Collector-Ba

 9.38. Size:147K  onsemi
 mmbt4401l smmbt4401l.pdf 

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

 9.39. Size:144K  onsemi
 mmbt4124lt1.pdf 

MMBT4124LT1G General Purpose Transistor NPN Silicon Features http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THER

 9.40. Size:148K  onsemi
 mmbt4124lt1g.pdf 

MMBT4124LT1G General Purpose Transistor NPN Silicon Features www.onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc 2 Emitter-Base Voltage VEBO 5.0 Vdc EMITTER Collector Current - Continuous IC 200 mAdc THERMAL

 9.41. Size:180K  onsemi
 mmbt4401wt1.pdf 

MMBT4401WT1G Switching Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO 40 Vdc Collector -- Base Volta

 9.42. Size:391K  onsemi
 2n4403bu 2n4403tf 2n4403tfr 2n4403ta 2n4403tar mmbt4403.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.43. Size:149K  onsemi
 mmbt4403lt3g.pdf 

MMBT4403L, SMMBT4403L Switching Transistor PNP Silicon Features S Prefix for Automotive and Other Applications Requiring Unique http //onsemi.com http //onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit

 9.44. Size:126K  onsemi
 mmbt4403m3.pdf 

MMBT4403M3T5G PNP Switching Transistor The MMBT4403M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO

 9.45. Size:144K  onsemi
 mmbt4403wt1g.pdf 

MMBT4403WT1G Switching Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO -40 Vdc 3 Collector-Base Voltage

 9.46. Size:267K  utc
 mmbt4401.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power SOT-23 amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236) 3 1 2 SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT4401G-AE3-R SOT-

 9.47. Size:190K  utc
 mmbt4403.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBT4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION 2 The UTC MMBT4403 is designed for use as a general purpose SOT-23 amplifier and switch requiring collector currents up to 500mA. 3 1 2 SOT-323 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 MMBT440

 9.48. Size:270K  auk
 mmbt4401.pdf 

 9.49. Size:512K  secos
 mmbt493.pdf 

MMBT493 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 A FEATURES L 3 3 Medium Power Transistor Top View C B 1 1 2 Collector 2 K E 3 MARKING D 493 1 H J F G Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. 2 A 2.80 3.00 G 0.10 REF. B 2.25 2.55

 9.50. Size:295K  secos
 mmbt4403w.pdf 

MMBT4403W PNP Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L Dim Min Max COLLECTOR A 1.800 2.200 3 S Top View B B 1.150 1.350 3 C 0.800 1.000 1 BASE D 0.300 0.400 V G 1 G 1.200 1.400 2 2 H 0.000 0.100 C EMITTER J 0.100 0.250 H J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symb

 9.51. Size:298K  secos
 mmbt4401w.pdf 

MMBT4401W NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L COLLECTOR Dim Min Max 3 A 1.800 2.200 S Top View B B 1.150 1.350 3 1 C 0.800 1.000 BASE V G D 0.300 0.400 1 G 1.200 1.400 2 2 C H 0.000 0.100 EMITTER H J 0.100 0.250 J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symbo

 9.52. Size:115K  secos
 mmbt491.pdf 

MMBT491 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Low equivalent on-resistance SOT-23 Collector 3 MARKING 491 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J J 0.085 0.177 K 3 K 0.450

 9.53. Size:951K  secos
 mmbt4401.pdf 

MMBT4401 NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A COLLECTOR SOT-23 L 3 Dim Min Max 3 3 A 2.800 3.040 S Top View 1 B 1 1 2 B 1.200 1.400 BASE 2 C 0.890 1.110 V G D 0.370 0.500 2 EMITTER G 1.780 2.040 C H 0.013 0.100 J 0.085 0.177 H J D K K 0.450 0.600 L 0.890 1.020 MAXIM

 9.54. Size:422K  secos
 mmbt4403.pdf 

MMBT4403 PNP Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A 2.800 3.040 COLLECTOR A L 3 B 1.200 1.400 C 0.890 1.110 3 1 D 0.370 0.500 Top View S B BASE 1 2 G 1.780 2.040 3 H 0.013 0.100 V G 2 1 J 0.085 0.177 EMITTER 2 K 0.450 0.600 C L 0.890 1.020 H J D S 2.100 2.

 9.55. Size:686K  jiangsu
 mmbt4401.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT 23 FEATURES Switching Transistor MARKING 2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol

 9.56. Size:876K  jiangsu
 mmbt4403.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base V

 9.57. Size:552K  zovie
 mmbt4403gh.pdf 

Zowie Technology Corporation Switching Transistor PNP Silicon Lead free product Halogen-free type 3 3 COLLECTOR 1 1 BASE MMBT4403GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 40 Vdc Collector-Base Voltage VCBO - 40 Vdc Emitter-Base Voltage VEBO - 5.0 Vdc Collector Current-Continuous IC - 600 mAdc THERMAL CHARACTERISTICS Ch

 9.58. Size:109K  zovie
 mmbt4401gh.pdf 

Zowie Technology Corporation Switching Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT4401GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteri

 9.59. Size:1474K  htsemi
 mmbt4401.pdf 

MMBT4401 TRANSISTOR(NPN) SOT-23 FEATURES Switching transistor 1. BASE MARKING MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mA PC Collector Power dissipation

 9.60. Size:946K  htsemi
 mmbt4403.pdf 

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati

 9.61. Size:316K  gsme
 mmbt4401.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc -

 9.62. Size:334K  gsme
 mmbt4403.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4403 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -40 Vdc -

 9.63. Size:195K  lge
 mmbt4401.pdf 

MMBT4401 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuou

 9.64. Size:222K  lge
 mmbt4403.pdf 

MMBT4403 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4403=2T MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Contin

 9.65. Size:520K  wietron
 mmbt4401.pdf 

MMBT4401 COLLECTOR 3 Switching Transistor NPN Silicon 3 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) mW

 9.66. Size:502K  wietron
 mmbt4403.pdf 

MMBT4403 COLLECTOR 3 Switching Transistor PNP Silicon 3 1 1 BASE 2 SOT-23 2 EMITTER M aximum R atings Rating Symbol Value Unit Collector-Emitter Voltage V -40 Vdc CEO Collector-Base Voltage VCBO -40 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current-Continuous IC mAdc -600 Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1

 9.67. Size:422K  willas
 mmbt4401lt1.pdf 

FM120-M WILLAS MMBT4401LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers We declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

 9.68. Size:503K  willas
 mmbt4403wt1.pdf 

FM120-M WILLAS THRU MMBT4403WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batc PNP etteh process design, excellent power dissipation offers Silicon b r reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to

 9.69. Size:431K  willas
 mmbt4403lt1.pdf 

FM120-M WILLAS MMBT4403LT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers PNP Silicon better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order t

 9.70. Size:528K  willas
 mmbt4401wt1.pdf 

FM120-M WILLAS THRU MMBT4401WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to We declare

 9.71. Size:285K  can-sheng
 mmbt4401.pdf 

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor SOT-23 MARKING MMBT4401=2X MARKING MMBT4401=2X MARKING MMBT4401=2X MARKING MMBT4401=2X MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise no

 9.72. Size:292K  can-sheng
 mmbt4403.pdf 

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor MARKING MMBT4403=2T MARKING MMBT4403=2T MARKING MMBT4403=2T MARKING MMBT4403=2T SOT-23 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise not

 9.73. Size:862K  blue-rocket-elect
 mmbt4401.pdf 

 9.74. Size:798K  blue-rocket-elect
 mmbt4403.pdf 

MMBT4403 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 500mA Collector currents up to 500 mA. / Applications General purpose amplifier and switch requiring. / Eq

 9.75. Size:198K  semtech
 mmbt4401.pdf 

MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 600 mA Total Device Dissipation FR-5 Board 1) Ptot 300 mW O Thermal Resistance Junction to Ambient R JA 417 C/W

 9.76. Size:222K  semtech
 mmbt4403.pdf 

MMBT4403 PNP Silicon General Purpose Transistor . TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 600 mA Total Device Dissipation FR-5 Board 1) Ptot 300 mW O Thermal Resistance Junction to Ambient R JA

 9.77. Size:1870K  kexin
 mmbt4403w.pdf 

SMD Type or SMD Type TransistICs PNP Transistors MMBT4403W (KMBT4403W) Features Switching transistors. Collector Current Capability IC=-600mA Collector Emitter Voltage VCEO=-40V 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-emitter voltage VCEO -40 V Collector-base voltage VCBO -40 V Emitter-base voltage VEBO -5 V

 9.78. Size:1817K  kexin
 mmbt4401.pdf 

SMD Type Transistors NPN Transistors MMBT4401 (KMBT4401) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

 9.79. Size:1020K  kexin
 mmbt4403.pdf 

SMD Type Transistors PNP Transistors MMBT4403 (KMBT4403) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Ideal for Medium Power Amplification and Switching Complementary NPN Type Available (MMBT4401) 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Coll

 9.80. Size:148K  panjit
 mmbt4401.pdf 

MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 40 Volt 225 mWatt VOLTAGE FEATURES 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free) 0

 9.81. Size:461K  panjit
 mmbt4403.pdf 

MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120(3.04) 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device MMBT4401 0.047(1.20) Lead free in compliance with EU RoHS 2011/65/EU directive 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.0

 9.82. Size:48K  comchip
 mmbt4403-g.pdf 

GeneraI Purpose Transistors SMD Diodes SpeciaIist MMBT4403-G (PNP) RoHS Device SOT-23 Features 0.119(3.00) -Switching transistor. 0.110(2.80) 3 0.056(1.40) 0.047(1.20) Marking 2T 1 2 0.006(0.15) 0.083(2.10) 0.002(0.05) Collector 0.066(1.70) 3 0.044(1.10) 0.103(2.60) 0.035(0.90) 0.086(2.20) 1 0.006(0.15) max Base 0.020(0.50) 0.007(0.20) min 0.013(0.35) 2

 9.83. Size:139K  comchip
 mmbt4401-g.pdf 

General Purpose Transistor MMBT4401-G (NPN) RoHS Device Features SOT-23 -Switching Transistor 0.118(3.00) 0.110(2.80) 3 0.055(1.40) Circuit Diagram 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) 1 0.035(0.90) Base 0.089(2.25) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimension

 9.84. Size:281K  galaxy
 mmbt4403.pdf 

Product specification PNP General Purpose Transistor MMBT4403 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary NPN type available (MMBT4401). Also available in lead free version. Ideal for medium power amplification and switching. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORM

 9.85. Size:666K  umw-ic
 mmbt4401.pdf 

R UMW UMW MMBT4401 SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING 2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60

 9.86. Size:794K  umw-ic
 mmbt4403.pdf 

R UMW UMW MMBT4403 SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4403 TRANSISTOR (PNP) FEATURES 1. BASE Switching transistor 2. EMITTER 3. COLLECTOR MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Curren

 9.87. Size:1620K  born
 mmbt4401.pdf 

 9.88. Size:548K  fuxinsemi
 mmbt4401.pdf 

 9.89. Size:535K  fuxinsemi
 mmbt4403.pdf 

 9.90. Size:892K  fms
 mmbt4401.pdf 

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT 23 MARKING 2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC

 9.91. Size:1338K  fms
 mmbt4403.pdf 

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4403 TRANSISTOR (PNP) FEATURES Switching transistor SOT-23 MARKING 2T MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -40 V 3. COLLECTOR VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

 9.92. Size:2354K  high diode
 mmbt4401.pdf 

MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Switching Transistor Marking 2X Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Collector Power Dissipation 300 mW C R JA Thermal Resistance From Junction T

 9.93. Size:2359K  high diode
 mmbt4403.pdf 

MMBT4403 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) SOT- 23 Features Switching Transistor Marking 2T Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage V EBO -5 C I Collector Current -600 mA C P Collector Power Dissipation 300 mW C R JA Thermal Resistance From Juncti

 9.94. Size:745K  jsmsemi
 mmbt4401.pdf 

MMBT4401 NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V

 9.95. Size:626K  jsmsemi
 mmbt4403.pdf 

MMBT4403 PNP Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction Complementary NPN product available - MMBT4401 MSL Class 1 compatible APPLICATIONS General purpose in desktop & handheld systems Ideal for medium-power signal amplification and switching SOT-23 MAXIMUM RATING (@ T = 25 unless otherwise specified) A Parameter Sym

 9.96. Size:1619K  mdd
 mmbt4401.pdf 

MMBT4401 TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0

 9.97. Size:1561K  mdd
 mmbt4403.pdf 

MMBT4403 TRANSISTOR (PNP) FEATURES SOT-23 Switching transistor MARKING MMBT4403=2T 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A PC Collector Power Dissipati

 9.98. Size:6088K  msksemi
 mmbt4401.pdf 

www.msksemi.com MMBT4401 Semiconductor Compiance Semiconductor Compiance FEATURES Switching Transistor MARKING 2X SOT 23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect

 9.99. Size:1009K  pjsemi
 mmbt4401.pdf 

MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA C Power Dissipation 1

 9.100. Size:939K  cn salltech
 mmbt4401.pdf 

 9.101. Size:786K  cn shandong jingdao microelectronics
 mmbt4401.pdf 

Jingdao Microelectronics co.LTD MMBT4401 MMBT4401 SOT-23 NPN TRANSISTOR 3 FEATURES Switching Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 60 V 2.EMITTER Collector Emitter Voltage VCEO 40 V 3.COLLECTOR Emitter Base Voltage VEBO 6 V

 9.102. Size:795K  cn shandong jingdao microelectronics
 mmbt4403.pdf 

Jingdao Microelectronics co.LTD MMBT4403 MMBT4403 SOT-23 PNP TRANSISTOR 3 FEATURES Switching Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO -40 V 2.EMITTER Collector Emitter Voltage VCEO -40 V 3.COLLECTOR Emitter Base Voltage VEBO -

 9.103. Size:1872K  cn shikues
 mmbt4401.pdf 

 9.104. Size:1451K  cn shikues
 mmbt4403.pdf 

 9.105. Size:581K  cn yfw
 mmbt4401.pdf 

MMBT4401 SOT-23 NPN Transistors 3 Features Ideal for Medium Power Amplification and Switching 2 1.Base Complementary PNP Type Available (MMBT4403) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2X Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO

 9.106. Size:575K  cn yfw
 mmbt4403.pdf 

MMBT4403 SOT-23 PNP Transistors 3 Features Ideal for Medium Power Amplification and Switching 2 1.Base Complementary NPN Type Available (MMBT4401) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2T Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -4

 9.107. Size:1650K  cn yongyutai
 mmbt4403l mmbt4403h.pdf 

MMBT4403 TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT4401 Collector Current Ic=0.6A Switching Transistor MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Colle

 9.108. Size:1544K  cn yongyutai
 mmbt4401l mmbt4401h.pdf 

MMBT4401 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT4403 Collector Current Ic=0.6A Switching Transistor MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 60 V Collector-Base Voltage VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC 600 mA C

 9.109. Size:1871K  cn twgmc
 mmbt4401.pdf 

MMBT3904 MMBT4401 AO3400 SI2305 MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching SOT-23 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60

 9.110. Size:1760K  cn twgmc
 mmbt4403.pdf 

MMBT3904 MMBT4403 AO3400 SI2305 MMBT4403 TRANSISTOR (PNP) FEATURES Epitaxial Planar Die Construction Complementary NPN Type Available SOT-23 (MMBT4401) Ideal for Medium Power Amplification and Switching 1 BASE 2 EMITTER MARKING 2T 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCE

 9.111. Size:353K  cn yangzhou yangjie elec
 mmbt4401q.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated leads,

 9.112. Size:314K  cn yangzhou yangjie elec
 mmbt4401.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector

 9.113. Size:318K  cn yangzhou yangjie elec
 mmbt4403.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMBT4403 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2T Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -40 Collector

 9.114. Size:1839K  eicsemi
 mmbt4140.pdf 

TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com MMBT4140 NPN Silicon General Purpose Transistor SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 30 V Emitter Base Voltage VEBO 5 V Collector Current (DC) IC 1 A Peak Collector Current ICM 2 A Peak Base Current

 9.115. Size:495K  cn doeshare
 mmbt4401.pdf 

MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT4401 2X Maximum Ratings & The

 9.116. Size:411K  cn doeshare
 mmbt4403.pdf 

MMBT4403 MMBT4403 SOT-23 Plastic-Encapsulate Switching Transistors (PNP) General description SOT-23 Plastic-Encapsulate Switching Transistors (PNP) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Marking 2T Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temper

 9.117. Size:331K  cn fosan
 mmbt4401.pdf 

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc -

 9.118. Size:332K  cn fosan
 mmbt4403.pdf 

 9.119. Size:2012K  cn goodwork
 mmbt4401.pdf 

MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals So

 9.120. Size:2996K  cn goodwork
 mmbt4403.pdf 

MMBT4403 PNP TRANSISTOR FEATURES Switching Transistor A M D e e a C E L1 L HE 1.BASE 2.EMITTER 3.COLLECTOR SOT-23 mechanical data UNIT A C D E HE e M L L1 a Marking max 1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.0 0.55 0.36 mm (ref) (ref) min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15 Type number Marking code max 43 6 55 118 102 20 77 0.0 22 14 MMBT4403 2T mil (ref) (ref) min

 9.121. Size:696K  cn hottech
 mmbt4401.pdf 

MMBT4401 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base V

 9.122. Size:684K  cn hottech
 mmbt4403.pdf 

MMBT4403 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to MMBT4401 Switching Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit VCBO Collector

 9.123. Size:502K  cn xch
 mmbt4401.pdf 

Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.8

 9.124. Size:347K  cn xch
 mmbt4403.pdf 

Features SOT-23 Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 Maximum Ratings @ T = 25