MMBTA42. Аналоги и основные параметры
Наименование производителя: MMBTA42
Маркировка: 1D_7Dp_7Dt_7DW_K3M
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.33 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: SOT23
Аналоги (замена) для MMBTA42
- подборⓘ биполярного транзистора по параметрам
MMBTA42 даташит
mmbta42.pdf
DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D088 MMBTA42 NPN high-voltage transistor Product specification 2000 Apr 11 Philips Semiconductors Product specification NPN high-voltage transistor MMBTA42 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 base 2 emitter APPLICATIONS 3 collector Telephony Professional commun
mmbta42.pdf
MMBTA42 Small signal NPN transistor Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 Applications Video amplifier circuits (rgb cathode current control) SOT-23 Telephone wireline interface (hook switches, dialer circuits) Description Figure 1. Intenal schematic diagram The d
mpsa42 mmbta42 pzta42.pdf
October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark 1D E B C Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu
mmbta42.pdf
MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case SOT-23 Ideal for Medium Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound. Complementary PNP Type MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens
mmbta42 2.pdf
MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and
smbta42 mmbta42.pdf
SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage 2 3 Complementary types 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA42/MMBTA42 s1D SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 300 V Collector-emitter voltage VCEO
mmbta42 sot-23.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMBTA42 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon High RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1
mmbta42.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage VCEO=300V * High current gain * Collector Dissipation Pc (max) =350mW Lead-free MMBTA42L Halogen-free MMBTA42G ORDERING INFORMA
mmbta42 mmbta43.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3 The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 1 2 * Collector-Emitter voltage VCEO=300V(MMBTA42) SOT-23 * Collector-Emitter voltage VCEO=200V(MMBTA43) (JEDEC TO-236) * High current gain * Coll
mmbta42.pdf
MMBTA42 NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
mmbta42.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base
mmbta42 mmbta43.pdf
SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. E L B L FEATURES DIM MILLIMETERS Complementary to MMBTA92/93. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.1
mmbta42.pdf
MMBTA42 TRANSISTOR(NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V I
mmbta42.pdf
MMBTA42 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage
mmbta42.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector
mmbta42 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units
mmbta42.pdf
MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , , , MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications
mmbta42 mmbta43.pdf
MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 V Collector Current IC 500 mA Powe
mmbta42.pdf
SEMICONDUCTOR MMBTA42/43 TECHNICAL DATA High Voltage Transistors We declare that the material of product compliance with RoHS requirements. DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping 3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel 2 MMBTA42LT3G 1D SOT-23 10000/Tape&Reel 1 MMBTA43LT1G M1E SOT-23 3000/Tape&Reel SOT-23 10000/Tape&Reel SOT 23 MMBTA43LT3G M1
mmbta42.pdf
SMD Type Transistors NPN Transistors MMBTA42 (KMBTA42) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 High breakdown voltage 3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co
mmbta42.pdf
MMBTA42 NPN HIGH VOLTAGE TRANSISTOR 300 Volt POWER 250 mWatt VOLTAGE FEATURES 0.120(3.04) NPN silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) MECH
mmbta42.pdf
R UMW UMW MMBTA42 SOT-23 Plastic-Encapsulate Transistors Dimensions In Millimeters Dimensions In Inches Symbol Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.950 TYP. 0.037 TYP. e1 1.800 2.000
mmbta42.pdf
MMBTA42 High Voltage NPN Transistor Package outline Features High voltage SOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0
mmbta42.pdf
MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3 2 1 1. BASE Marking 1D 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Co
mmbta42.pdf
MMBTA4 2 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking 1D Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEO C V Emitter-Base Voltage 5 V EBO I Collector Current C
mmbta42.pdf
MMBTA42 SOT-23 Plastic-Encapsulate Transistor SOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D PACKAGE SPECIFICATIONS Box Size QTY/Box Reel DIA. Q'TY/Reel Carton Size Q'TY/Carton Package Reel Size (pcs) (pcs) (mm) (mm) (mm) (pcs)
mmbta42.pdf
Jingdao Microelectronics co.LTD MMBTA42 MMBTA42 SOT-23 NPN TRANSISTOR 3 FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1.BASE Parameter Symbol Value Unit 2.EMITTER 3.COLLECTOR VCBO Collector Base Vo
mmbta42.pdf
MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage SOT-23 Complementary to MMBTA92 (PNP) 1 BASE 2 EMITTER 3 COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value alue Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO
mmbta42 mmbta42-l.pdf
MMBTA42 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter High breakdown voltage 1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 300 V Emitter - Base V
mmbta42.pdf
MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package
mmbta42.pdf
RoHS RoHS COMPLIANT COMPLIANT MMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit
mmbta42.pdf
SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V VCEO Collector-Emitter Voltage 3
mmbta42 mmbta43.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter Voltage VCEO 300 200 Vdc - Collector-Base Voltage VCBO 300 200 Vdc - Emitter-Base Voltage VEBO 6.0 6.0
mmbta42.pdf
MMBTA42 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 300Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V. Collector current IC=0.3A. ansition frequency fT>50MHz @ Tr IC=10mAdc, VCE=20Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Sol
mmbta42.pdf
MMBTA42 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A
mmbta42l mmbta43.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA42LT1/D High Voltage Transistors * MMBTA42LT1 NPN Silicon COLLECTOR MMBTA43LT1 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol MMBTA42 MMBTA43 Unit 2 Collector Emitter Voltage VCEO 300 200 Vdc Collector Base Voltage VCBO 300 200 Vdc CASE 318 08, STYLE 6 Emitter Base
mmbta42lt3g.pdf
MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symb
mmbta42l smmbta42l mmbta43l.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,
mmbta42lt1g.pdf
MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable COLLECTOR S Prefix for Automotive and Other Applications Requiring Unique 3 Site and Control Change Requirements 1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symb
mmbta42lt1 mmbta43lt1.pdf
MMBTA42LT1G, MMBTA43LT1G High Voltage Transistors NPN Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 Characteristic Symbol Value Unit EMITTER Collector-Emitter Voltage VCEO Vdc MMBTA42 300 MMBTA43 200 3 Collector-Base Voltage VCBO Vdc MMBTA42 300 MMBTA43 200 1 2 Emitter-B
mmbta42lt smmbta42l mmbta43l.pdf
MMBTA42L, SMMBTA42L, MMBTA43L High Voltage Transistors NPN Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR 3 PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Characteristic Symbol Value
mmbta42w.pdf
MMBTA42W NPN Silicon Elektronische Bauelemente General Purpose Transistor MMBTA42W 120 VCE = 10 Vdc TJ = +125 C 100 80 25 C 60 40 -55 C 20 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain 100 80 Ceb @ 1MHz 70 60 10 50 40 1.0 Ccb @ 1MHz 30 TJ = 25 C VCE = 20 V 20 f = 20 MHz 0.1 10 0.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10
mmbta42-43.pdf
MMBTA42 MMBTA43 COLLECTOR High-Voltage NPN Transistor 3 3 Surface Mount 1 1 BASE 2 P b Lead(Pb)-Free 2 EMITTER SOT-23 Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit Collector-Emitter Voltage MMBTA42 300 V V CEO MMBTA43 200 Collector-Base Voltage MMBTA42 300 V V CBO MMBTA43 200 Emitter-Base Voltage MMBTA42 6.0 V EBO V MMBTA43 6.0 C
mmbta42t.pdf
MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , , , MMBTA92T(BR3CG92T) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).
mmbta42f.pdf
SEMICONDUCTOR MMBTA42F TECHNICAL DATA TRANSISTOR (NPN) MMBTA42F A C H G FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage D D K F F MARKING A42 DIM MILLIMETERS A 4.70 MAX _ + B 2.50 0.20 C 1.70 MAX 1 2 3 D 0.45+0.15/-0.10 MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX _ + F 1.50 0.10 Symbol Parameter Value Unit G 0.40 T
mmbta42w.pdf
SMD Type Transistors NPN Transistors MMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA 3 NPN high voltage transistors COLLECTOR 1 BASE 1 Base 2 Emitter 3 Collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30
mmbta42-g.pdf
General Purpose Transistor MMBTA42-G (NPN) RoHS Device Features SOT-23 -High breakdown voltage. 0.119(3.00) 0.110(2.80) -Low collector-emitter saturation voltage. 3 -Ultra small surface mount package. 0.056(1.40) 0.047(1.20) Diagram 1 2 0.079(2.00) Collector 0.071(1.80) 3 0.006(0.15) 0.003(0.08) 1 0.041(1.05) 0.100(2.550) Base 0.035(0.90) 0.089(2.250) 2 0.004(0.10)
mmbta42-ms.pdf
www.msksemi.com MMBTA42-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP) 1. BASE 2. EMITTER SOT 23 Marking 1D 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage VCBO 300 V Coll
mmbta42l.pdf
MMBTA42 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBTA92 Collector Current Ic=0.5A High breakdown voltage Low collector-emitter saturation voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 300 V Collector-Base Voltage VCEO 300 V Collector-Emitter Volta
Другие транзисторы: MMBTA12, MMBTA13, MMBTA13LT1, MMBTA14, MMBTA14LT1, MMBTA20, MMBTA20LT1, MMBTA28, 13009, MMBTA42LT1, MMBTA43, MMBTA43LT1, MMBTA55, MMBTA55LT1, MMBTA56, MMBTA56LT1, MMBTA63
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