MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA63LT1/DDarlington TransistorsMMBTA63LT1PNP SiliconCOLLECTOR 3MMBTA64LT1**Motorola Preferred DeviceBASE1EMITTER 23MAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcCASE 31808, STYLE 6EmitterBase Voltage VEBO 10

November 2011MPSA64 / MMBTA64 / PZTA64PNP Darlington TransistorFeatures This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.MPSA64 MMBTA64 PZTA64CCEECBTO-92 SOT-23 SOT-223BMark:2VEBCAbsolute Maximum Ratings* Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCES Coll

SEMICONDUCTOR MMBTA63/64TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05Collector-Base VCBO -30 VMMBTA63/64 K 0.00 ~

MMBTA64TRANSISTOR(PNP)SOT23 FEATURES For Applications Requiring High Current Gain MARKING:2V 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -30 V V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -10 V EBOI Collector Current -800 mA CP Collector Power

MMBTA64COLLECTORDarlington Transistor 33PNP Silicon 1 1BASE2SOT-232EMITTERMAXIMUM RATINGS (Ta=25 C)Rating Symbol ValueUnitVCollector-Emitter Voltage CES -30 VdcCollector-Base Voltage VCBO-30 VdcEmitter-Base Voltage VEBO-10 VdcICmAdcCollector Current-Continuous -500THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnitTotal Device Dissipation

SEMICONDUCTORMMBTA64TECHNICAL DATADarlington TransistorsPNP SiliconWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1Rating Symbol Value Unit SOT 23 CollectorEmitter Voltage VCES 30 VdcCollectorBase Voltage VCBO 30 VdcEmitterBase Voltage VEBO 10 VdcCollector Current Continuous IC 500 mAdcDEVIC

MMBTA63LT1G,MMBTA64LT1G,SMMBTA64LT1GDarlington TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 (TO-236) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318Compliant*STYLE 6MAXIMUM RATINGSCOLLECTOR

MPSA63 MMBTA63 PZTA63CCEECBTO-92CBSOT-23BSOT-223EMark: 2UPNP Darlington TransistorThis device is designed for applications requiring extremely highcurrent gain at currents to 800 mA. Sourced from Process 61.See MPSA64 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA55LT1/DDriver TransistorsMMBTA55LT1COLLECTORPNP Silicon3MMBTA56LT1**Motorola Preferred Device1BASE2EMITTERMAXIMUM RATINGS3Rating Symbol MMBTA55 MMBTA56 Unit1CollectorEmitter Voltage VCEO 60 80 Vdc2CollectorBase Voltage VCBO 60 80 VdcEmitterBase Voltage VEBO 4.0 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA92LT1/DHigh Voltage Transistors*MMBTA92LT1COLLECTORPNP Silicon3MMBTA93LT1*Motorola Preferred Device1BASE2EMITTER3MAXIMUM RATINGS1Rating Symbol MMBTA92 MMBTA93 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6SOT

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA42LT1/DHigh Voltage Transistors*MMBTA42LT1NPN SiliconCOLLECTORMMBTA43LT13*Motorola Preferred Device1BASE23EMITTERMAXIMUM RATINGS1Rating Symbol MMBTA42 MMBTA43 Unit2CollectorEmitter Voltage VCEO 300 200 VdcCollectorBase Voltage VCBO 300 200 VdcCASE 31808, STYLE 6EmitterBase

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA70LT1/DGeneral Purpose TransistorMMBTA70LT1COLLECTORPNP Silicon31BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 Vdc CASE 31808, STYLE 6SOT23 (TO236AB)Collector Current Continuous IC 100 mAdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA20LT1/DGeneral Purpose AmplifierMMBTA20LT1NPN SiliconCOLLECTOR313BASE122EMITTERCASE 31808, STYLE 6MAXIMUM RATINGSSOT23 (TO236AB)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTHERMAL C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA13LT1/DMMBTA13LT1Darlington Amplifier TransistorsMMBTA14LT1*NPN SiliconCOLLECTOR 3*Motorola Preferred DeviceBASE13EMITTER 21MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCES 30 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 30 VdcEmitte

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBTA05LT1/DMMBTA05LT1Driver TransistorsMMBTA06LT1*NPN SiliconCOLLECTOR*Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol MMBTA05 MMBTA06 UnitCollectorEmitter Voltage VCEO 60 80 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 80 VdcEmit

DISCRETE SEMICONDUCTORSDATA SHEETMMBTA92PNP high-voltage transistorProduct specification 2004 Jan 16Supersedes data of 2000 Apr 11Philips Semiconductors Product specificationPNP high-voltage transistor MMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professi

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA92PNP high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationPNP high-voltage transistor MMBTA92FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBTA42NPN high-voltage transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN high-voltage transistor MMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector Telephony Professional commun

MMBTA92Small signal PNP transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The NPN complementary type is MMBTA42Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

MMBTA42Small signal NPN transistorFeatures Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92Applications Video amplifier circuits (rgb cathode current control)SOT-23 Telephone wireline interface (hook switches, dialer circuits)Description Figure 1. Intenal schematic diagramThe d

October 2009MPSA42 / MMBTA42 / PZTA42NPN High Voltage AmplifierFeatures This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42CCE E C BB SOT-23TO-92SOT-223Mark: 1DE B CAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

MPSA05/MMBTA05NPN General Purpose Amplifier3 This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from process 10.2SOT-23TO-92 1Mark: 1H11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter V

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

MPSA55 MMBTA55 PZTA55CCEECBC TO-92BSOT-23BSOT-223EMark: 2HPNP General Purpose Amplifier Absolute Maximum Ratings* Symbol Parameter Value UnitsVCES Collector-Emitter Voltage

January 2005MMBTA13NPN Darlington Transistor This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics.32SOT-231Mark: 1M1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-

MPSA28 MMBTA28 PZTA28CCEECBTO-92CBSuperSOT-3BSOT-223EMark: 3SSNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 500 mA. Sourcedfrom Process 03.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 80 VVCBO Colle

MPSA92 MMBTA92 PZTA92CCEECBC TO-92BSOT-23BSOT-223EMark: 2DPNP High Voltage AmplifierThis device is designed for high voltage driver applications.Sourced from Process 76.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 300 VVCBO Collector-Base Voltage 300 VVEBO Emitter-Base Voltage 5.0

MPSA14 MMBTA14 PZTA14CCEECBC TO-92BSOT-23BSOT-223EMark: 1NNPN Darlington TransistorThis device is designed for applications requiring extremelyhigh current gain at collector currents to 1.0 A. Sourcedfrom Process 05.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 30 VVCBO Collector-Ba

March 2011MPSA06 / MMBTA06 / PZTA06NPN General Purpose AmplifierFeatures This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33.MPSA06 MMBTA06 PZTA06CCEECBTO-92 SOT-23 SOT-223BMark:1GEBCAbsolute Maximum Ratings * Ta = 25C unless otherwise noted Symbol Parameter Value UnitsVCEO Colle

February 2006MPSA56/MMBTA56/PZTA56 PNP General Purpose AmplifierDescriptionThis device is designed for general purpose amplifierapplications at collector currents to 300mA. Sourcedfrom Process 73Absolute Maximum Ratings*TA = 25C unless otherwise specified.Parameter Symbol Value UnitCollector-Emitter Voltage VCES -80 VCollector-Base Voltage VCBO -80 VEmitter-Base Voltag

MPSA06 MMBTA06 PZTA06CCEECBC TO-92BSOT-23BSOT-223EMark: 1GNPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 33.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Volta

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

MMBTA92 300V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Complementary NPN Type: MMBTA42 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA42 300V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data BVCEO > 300V Case: SOT-23 Ideal for Medium Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound. Complementary PNP Type: MMBTA92 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sens

MMBTA05 / MMBTA06NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Complementary PNP Type: MMBTA55 & MMBTA56 Totally Lead-Free & Fully RoHS compliant

MMBTA42 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A Complementary PNP Type Available (MMBTA92) SOT-23 C Ideal for Low Power Amplification and Switching Dim Min Max B C Lead, Halogen and Antimony Free, RoHS Compliant A 0.37 0.51 "Green" Device (Notes 4 and

MMBTA92 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database.Features Epitaxial Planar Die Construction A SOT-23 Complementary NPN Types Available (MMBTA42) CDim Min Max Ideal for Medium Power Amplification and Switching A 0.37 0.51 B C Lead, Halogen and Antimony Free, RoHS Compliant B 1.20 1.40 "Green"

MMBTA55 / MMBTA56 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT-23 Ideal for Low Power Amplification and Switching Case Material: Molded Plastic, Green Molding Compound; Complementary NPN Type: MMBTA05 / MMBTA06 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

SMBTA92/MMBTA92PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets23 and switching power supplies1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA42 / MMBT42 (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA92/MMBTA92

SMBTA06/MMBTA06NPN Silicon AF Transistor Low collector-emitter saturation voltage23 Complementary type: 1 SMBTA 56 / MMBTA56 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA06/MMBTA06 s1G SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit80 VCollector-emitter voltage VCEO80Colle

SMBTA42/MMBTA42NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage23 Complementary types: 1 SMBTA92 / MMBTA92(PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA42/MMBTA42 s1D SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit300 VCollector-emitter voltage VCEO

SMBTA14/MMBTA14NPN Silicon Darlington Transistor High collector current23 Low collector-emitter saturation voltage1 Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA14/MMBTA14 s1N SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit30 VCollector-emitter voltage VCES30Collector-base voltage

SMBTA56/MMBTA56PNP Silicon AF Transistor Low collector-emitter saturation voltage23 Complementary type: SMBTA06 / MMBTA06(NPN)1 Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA56/MMBTA56 s2G SOT231=B 2=E 3=CMaximum RatingsParameter Symbol Value Unit80 VCollector-emitter voltage VCEO80Collector-

SMBTA92/MMBTA92PNP Silicon High-Voltage Transistors Suitable for video output stages in TV sets23 and switching power supplies1 High breakdown voltage Low collector-emitter saturation voltage Complementary types: SMBTA92 / MMBT92 (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q101Type Marking Pin Configuration PackageSMBTA92/MMBTA

MMBTA43Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +1

M C CMMBTA05TMMicro Commercial ComponentsMicro Commercial Components THRU20736 Marilla Street ChatsworthCA 91311MMBTA06Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epitaxial Planar Die Construction NPN Small Signal Complementary PNP Types Available (MMBTA55/MMBTA56)General Purpose Ideal

MCCMMBTA55TM Micro Commercial Components20736 Marilla Street ChatsworthTHRUMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MMBTA56Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP General This device is designed for general purpose amplifier applications atcollector curren

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMMBTA92CA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 PackagePNP Silicon High Capable of 300mWatts of Power Dissipation Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Voltage Transistor

MMBTA55,MMBTA56Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Purpose AmplifierMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMBTA42Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates NPN Silicon HighRoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Voltage Transistor Moisure Sensitivity Level 1

MMBTA44Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +1

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITT

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

MMBTA06WT1GDriver TransistorNPN SiliconMoisture Sensitivity Level: 1ESD Rating: Human Body Model -- 4 kVESD Rating: Machine Model -- 400 Vhttp://onsemi.comFeaturesCOLLECTOR3 These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2MAXIMUM RATINGSEMITTERRating Symbol Value Unit3Collector -- Emitter Voltage VCEO 80 VdcCollector -- Bas

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318STYLE 6Compliant*COLLECTOR3MAXIMUM RATING

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringwww.onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollector

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTA92L, SMMBTA92L,MMBTA93LHigh Voltage TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASEMAXIMUM RATINGS2Rating Symbol 92 93 UnitEMITTER

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symb

MMBTA20LT1General Purpose AmplifierNPN SiliconFeatures Pb-Free Package is Availablehttp://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector-Emitter Voltage VCEO 40 Vdc1BASEEmitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 100 mAdc2THERMAL CHARACTERISTICSEMITTERCharacteristic Symbol Max UnitTotal Device Dissipation FR-5

MMBTA70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -40 VdcBASEEmitter-Base Voltage VEBO -4.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacterist

MMBTA05LT1G,MMBTA06LT1GDriver TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant 31MAXIMUM RATINGSBASERating Symbol Value Unit2Collector-Emitter Voltage VCEO VdcEMITTERMMBTA05LT1 60MMBTA06LT1 803Collector-Base Voltage VCBO VdcMMBTA05LT1 601MMBTA06LT1 802Emitter-Base Vo

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318STYLE 6CompliantCOLLECTOR3MAXIMUM RATINGSRat

MMBTA70LT1GGeneral Purpose TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO -40 VdcBASEEmitter-Base Voltage VEBO -4.0 Vdc2Collector Current - Continuous IC -100 mAdcEMITTERTHERMAL CHARACTERISTICSCharacterist

MMBTA56W, SMMBTA56WDriver TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable SC-70 (SOT-323)CASE 419 These Devices are Pb-Free, Halog

MMBTA55LT1G,MMBTA56LT1GDriver TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO VdcMMBTA55 -603MMBTA56 -80Collector-Base Voltage VCBO VdcMMBTA55 -60 1MMBTA56 -802Emitter-Base Voltage VE

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA42LT1G,MMBTA43LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant31BASEMAXIMUM RATINGS2Characteristic Symbol Value UnitEMITTERCollector-Emitter Voltage VCEO VdcMMBTA42 300MMBTA43 2003Collector-Base Voltage VCBO VdcMMBTA42 300MMBTA43 200 12Emitter-B

MMBTA56W, SMMBTA56WDriver TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1www.onsemi.com ESD Rating: Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable SC-70 (SOT-323)CASE 419 These Devices are Pb-Free, Halogen

MMBTA13L, SMMBTA13L,MMBTA14L, SMMBTA14LDarlington AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSOT-23 (TO-236)Compliant* CASE 318STYLE 6COLLECTOR 3MAXIM

MMBTA06WT1G,SMMBTA06WT1G,Driver TransistorNPN SiliconMoisture Sensitivity Level: 1http://onsemi.comESD Rating: Human Body Model - 4 kVESD Rating: Machine Model - 400 VFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-70Site and Control Change RequirementsCASE 419 These Devices are Pb-Free, Halogen

MMBTA05L, MMBTA06L,SMMBTA06LDriver TransistorsNPN Siliconhttp://onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueCOLLECTORSite and Control Change Requirements; AEC-Q101 Qualified and3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1CompliantBASE2EMITTERMAXIMUM RATINGSRating Symbol Value Unit3

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCASE 318STYLE 6CompliantCOLLECTOR3MAXIMUM RATINGSRat

MMBTA05L, MMBTA06LDriver TransistorsNPN SiliconFeatures S and NSV Prefix for Automotive and Other Applications Requiringhttp://onsemi.comUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS2Rating Symbol Value UnitEMITTERCollec

MMBTA55L Series,MMBTA56L Series,SMMBTA56L SeriesDriver TransistorsPNP Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change RequirementsSOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318STYLE 6Compliant*COLLECTOR3MAXIMUM RATING

MMBTA42L, SMMBTA42L,MMBTA43LHigh Voltage TransistorsNPN Siliconwww.onsemi.comFeatures S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified and COLLECTOR3PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1BASECompliant2EMITTERMAXIMUM RATINGSCharacteristic Symbol Value

MMBTA92LT1G,MMBTA93LT1GHigh Voltage TransistorsPNP Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS1Rating Symbol 92 93 UnitBASECollector-Emitter Voltage VCEO -300 -200 VdcCollector-Base Voltage VCBO -300 -200 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 -5.0 VdcCollector Curren

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 PNP SILICON TRANSISTOR HIGH VOLTAGE PNP TRANSISTOR 3 DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed 1for telephone signal switching and for high voltage amplifier. 2SOT-23 FEATURES (JEDEC TO-236)* High Collector-Emitter voltage: VCEO= -300V * Collector Dissipation: PC(MAX)=350mW ORDERING INFOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3*Collector-Emitter voltage: V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO*Collector current up to 300mA 1*Complement to UTC MMBTA94/93 2*Power Dissipation: P (max)=350mW DSOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa

UNISONIC TECHNOLOGIES CO., LTD MMBTA42 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES * Collector-Emitter voltage: VCEO=300V * High current gain * Collector Dissipation: Pc (max) =350mW Lead-free: MMBTA42L Halogen-free: MMBTA42G ORDERING INFORMA

UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTORDARLINGTON TRANSISTORDESCRIPTIONThe UTC MMBTA13 is a darlington transistor.FEATURES1*Collector-Emitter Voltage: Vces = 30V*Collector Dissipation : Pc ( mas ) = 625 mWSOT-231:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified )PARAMETER SYMBOL VALUE UNITCollector-B

UNISONIC TECHNOLOGIES CO., LTD MMBTA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION 3The UTC MMBTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 12* Collector-Emitter voltage: VCEO=300V(MMBTA42) SOT-23* Collector-Emitter voltage: VCEO=200V(MMBTA43) (JEDEC TO-236)* High current gain * Coll

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3* Collector-Emitter Voltage: V = -400V CEO* Collector Dissipation: P = 350mW C(MAX)* Low Collector-Emitter Saturation Voltage 1 APPLICATIONS 2SOT-23* Telephone Switching (JEDEC TO-236)* High Voltage Switch ORDERING INFORMATION Pin Assignment Ordering Num

UNISONIC TECHNOLOGIES CO., LTD MMBTA05 Preliminary AMPLIFIER TRANSISTOR NPN MMBTA05 FEATURES * Collector-Emitter Voltage: VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA05L-AL3-R MMBTA05G-AL3-R SOT-323 B E C Tape ReelNote: Pin assignment: E: EMITTER, C: COLLECTOR, B: BASE MARKING www.unisonic.com.tw 1

UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3* Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 12SOT-23 ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 3MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5

UNISONIC TECHNOLOGIES CO., LTD MMBTA55 Preliminary AMPLIFIER TRANSISTOR PNP MMBTA55 FEATURES * Collector-Emitter Voltage: VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA55L-AE3-R MMBTA55G-AE3-R SOT-23 E B C Tape ReelMMBTA55L-AL3-R MMBTA55G-AL3-R SOT-323 E B C Tape ReelNote: Pin assignment: E: EMITTER,

UNISONIC TECHNOLOGIES CO., LTD MMBTA06 NPN SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3* Collector-Emitter Voltage: VCEO=80V * Collector Dissipation: PD=350mW 12SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBTA06G-AE3-R SOT-23 E B C Tape Reel Note: Pin Assignment: E: Emitter B: Base C: Collector

MMBTA92PNP SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxPb-free is available.A 2.800 3.040Power dissipation & Collector currentB 1.200 1.400 Pcm: 0.3W Icm: -0.3AHigh voltage V(BR): -300V C 0.890 1.110AD 0.370 0.500LG 1.780 2.0403H 0.013 0.100COLLECTO

MMBTA92WPNP SiliconElektronische Bauelemente General Purpose TransistorMMBTA92W300VCE = 10 VdcTJ = +125C25020025C150-55C1005000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100150Cib @ 1MHz1301101090Ccb @ 1MHz701.050TJ = 25CVCE = 20 Vdc30F = 20 MHz0.1100.1 1.0 10 100 10001 3 5 7 9 11 13 15 17 19 2

MMBTA42WNPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42W120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10

MMBTA43 0.5A , 200V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA93 33Top ViewC B11 2MARKING 2K EABX DH JF GPACKAGE INFORMATION Package MPQ Leader Size Millimeter

MMBTA42NPN SiliconElektronische Bauelemente General Purpose TransistorMMBTA42120VCE = 10 VdcTJ = +125C1008025C6040-55C2000.1 1.0 10 100IC, COLLECTOR CURRENT (mA)Figure 1. DC Current Gain100 80Ceb @ 1MHz70601050401.0Ccb @ 1MHz30TJ = 25CVCE = 20 V20f = 20 MHz0.1 100.1 1.0 10 100 1000 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor AL 33Top View C BMARKING 11 2Product Marking Code2K EMMBTA44 4DDH JF GSYMBOL Millimeter MillimeterREF. REF. Collector Min. Max. Min.

MMBTA55 / MMBTA56 PNP Silicon Elektronische BauelementeDriver Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23SOT-233Dim Min Max1 AA 2.800 3.040L2B 1.200 1.4003C 0.890 1.110SCOLLECTOR Top ViewBD 0.370 0.5001 23G 1.780 2.040V G H 0.013 0.1001J 0.085 0.177BASEC K 0.450 0.600L 0.890 1.0202HJDE

MMBTA13 MMBTA14Elektronische Bauelemente Darlington Amplifier Transistor NPN SiliconRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeSOT-23Dim Min MaxAL A 2.800 3.040COLLECTOR 3B 1.200 1.4003 3C 0.890 1.110SBASE 1 B1 21 D 0.370 0.5002G 1.780 2.040V GEMITTER 2H 0.013 0.100J 0.085 0.177CFEATURES K 0.450 0.600HJL 0.890 1.0

MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor AL33FEATURES Top View C B1 Driver Transistor 1 22K EDMARKING H JF GCollectorC Millimeter MillimeterREF. REF.Min. Max. Min. Max.A 2

MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications AL33MARKING Top View C B11 22GM 2K EDPACKAGE INFORMATION H JF GPackage MPQ Leader Size SOT-23 3K 7 inch Millimeter Millimeter R

MMBTA06 0.5A , 80V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-23 High Voltage Application A Telephone Application L Complementary to MMBTA56 33Top ViewC B11 2MARKING 2K E1GM DH JF GPACKAGE INFORMATION Package MPQ Leader Size Mi

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES High Voltage Transistor AL33MARKING Top View C B11 23D 2K EDPACKING INFORMATION Collector H JF GPackage MPQ Leader Size Millimeter MillimeterREF. REF.SOT-23 3K 7 in

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Bas

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES High breakdown voltage 1. BASE 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92 (PNP) Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA13 TRANSISTOR (NPN) Unit : mm FEATURES1. BASE Darlington Amplifier 2. EMITTER3. COLLECTORMarking : K2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base

www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25C unless otherwise specifie

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate TransistorsMMBTA94 TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitte

www.jscj-elec.com AD-MMBTA28 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA28 Plastic-Encapsulated Transistor AD-MMBTA28 Transistor (NPN) FEATURES High current gain AEC-Q101 qualified MARKING 3SS = Device code 3SS EQUIVALENT CIRCUIT 3 1 2 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA28 MAXIMUM RATINGS (T = 25C unless otherw

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOV Collector-Emitter Voltage -80 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (PNP) SOT23 FEATURES Driver Transistors MARKING:2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBOV Collector-Emitter Voltage -60 V CEOVEBO Emit

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR (NPN) SOT23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Volta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt

SEMICONDUCTOR MMBTA517TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltage 40 V L 0.55P P

SEMICONDUCTOR MMBTA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA92/93._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

SEMICONDUCTOR MMBTA13/14TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR.EL B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05MAXIMUM RATING (Ta=25 )E 2.40+0.30/-0.201G 1.90CHARACTERISTIC SYMBOL RATING UNITH 0.95J 0.13+0.10/-0.05VCBOCollector-Base Voltage 30 VK 0.00 ~ 0.10

SEMICONDUCTOR MMBTA05TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER STAGE AMPLIFIER APPLICATIONS.VOLTAGE AMPLIFIER APPLICATIONS.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA55._+2.93 0.20AB 1.30+0.20/-0.15Driver Stage Application of 20 to 25 Watts Amplifiers.C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0

SEMICONDUCTOR MMBTA56TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATIONS.FEATUREEComplementary to MMBTA06 L B LDIM MILLIMETERS_+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-B

SEMICONDUCTOR MMBTA55TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATIONS.FEATURESEL B LComplementary to MMBTA05.DIM MILLIMETERSDriver Stage Application of 20 to 25 Watts Amplifiers._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95MAXIMUM RATING (Ta=25 )J 0.13+0.10/-0.05K 0.00 ~

SEMICONDUCTOR MMBTA92/93TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.EL B LFEATURESDIM MILLIMETERSComplementary to MMBTA42/43._+2.93 0.20AB 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.1

SEMICONDUCTOR MMBTA06TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDRIVER STAGE AMPLIFIER APPLICATIONS.VOLTAGE AMPLIFIER APPLICATIONS.EL B LFEATUREDIM MILLIMETERS_+A 2.93 0.20Complementary to MMBTA56.B 1.30+0.20/-0.15C 1.30 MAXSuffix U : Qualified to AEC-Q101.23 D 0.40+0.15/-0.05ex) MMBTA06-RTK/HUE 2.40+0.30/-0.20G 1.901H 0.95J 0.13+0.10/-0.05K

SEMICONDUCTOR MMBTA44TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.FEATURES High Breakdown Voltage.Collector Power Dissipation : PC=350mW.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-BaseVoltage 450 VVCEOCollector-EmitterVoltage 400 VVEBOEmitter-Base Voltage 6 VICCollector Current 300 mAPC *Collector Power Dissi

MMBTA92TRANSISTOR(PNP)SOT-23 FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Power Dissipation 300 m

MMBTA28TRANSISTOR(NPN)FEATURES SOT23 High Current Gain MARKING: 3SS MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 80 V CBO2. EMITTER V Collector-Emitter Voltage 80 V CEO3. COLLECTOR V Emitter-Base Voltage 12 V EBOIC Collector Current 500 mA PC Collector Power Dissipation 200 mW R Thermal

MMBTA43TRANSISTOR(NPN)SOT23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA93 1. BASE MARKING:ABX 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 200 V CBOV Collector-Emitter Voltage 200 V CEOV Emitter-Base Voltage 5 V EBOI Collector

MMBTA42TRANSISTOR(NPN)FEATURES High breakdown voltage SOT-23 Low collector-emitter saturation voltage 1. BASE Complementary to MMBTA92 (PNP) 2. EMITTER 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VI

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit : mm 1. BASE Marking : MMBTA13:K2D; MMBTA14:K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA94TRANSISTOR(PNP)SOT23 FEATURES High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -200 mA CI Collector Current -Pulsed -300 mA C

MMBTA93TRANSISTOR(PNP)SOT23 FEATURES High Voltage Application Telephone Application Complementary to MMBTA43 1. BASE MARKING:YW 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -200 V CBOV Collector-Emitter Voltage -200 V CEOV Emitter-Base Voltage -5 V EBOIC Collec

MMBTA05TRANSISTOR(NPN)SOT-23 FEATURES Driver transistor 1. BASE 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 0.5 A PC Collector Power Dissipation 300 mW TJ Juncti

MMBTA56TRANSISTOR(PNP) SOT23 FEATURES General Purpose Amplifier Applications MARKING: 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBOV Collector-Emitter Voltage -80 V CEOVEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissip

MMBTA55TRANSISTOR(PNP)SOT23 FEATURES Driver Transistors MARKING:2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBOV Collector-Emitter Voltage -60 V CEOVEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissipation 225 mW CR The

MMBTA06TRANSISTOR(NPN)FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit SOT23 V Collector-Base Voltage 80 V CBOV Collector-Emitter Voltage 80 V CEOV Emitter-Base Voltage 4 V EBOI Collector Current 500 mA CP Collector P

MMBTA44TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT23 V Collector-Emitter Voltage 400 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current-Continuous 200 mAC I Collector Current -Pulsed 300

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA92 GMA93MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA92 GMA93 Collector-Emitter VoltageVCEO -300 -200 Vdc-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA42 GMA43MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol UnitGMA42 GMA43 Collector-Emitter VoltageVCEO 300 200 Vdc-

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA94MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO -400 VCollector-Emitter Voltage -Collec

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA06MAXIMUM RATINGS (Ta=25 )MAXIMUM RATINGS (Ta=25)MAXIMUM RATINGS (Ta=25 )Characteristic Symbol Rating Unit Collector-Base voltageVCBO 80 Vdc

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA44MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collect

MMBTA92 SOT-23 Transistor(PNP)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features High voltage transistor MARKING:2D Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous

MMBTA42 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage

MMBTA05/MMBTA06 NPN General Purpose TransistorSOT-23Features Epitaxial planar die construction. Complementary PNP type available (MMBTA55/MMBTA56). Also available in lead free version. ApplicationsDimensions in inches and (millimeters) Ideal for medium power amplification and switching Ordering Information Type No. Marking Package Code MMBTA05 1H SOT-23 M

MMBTA13,14 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking : MMBTA13:K2D; MMBTA14:K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

MMBTA44Transistor(NPN)SOT-23Features Power dissipation: PCM = 0.35W (Tamb=25) ICM = 0.2A Collector current: Collector-base voltage: V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg: -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co

MMBTA92COLLECTORHigh-Voltage PNP Transistor33Surface Mount112BASEP b Lead(Pb)-Free2SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-E m itter Voltage V -3 0 0 VdcCE OCollector-B as e Voltage VCB O -3 0 0 VdcE m itter-B as e VOltage VE B O -5 . 0 VdcCollector Current-Continuous ICmAdc-5 0 0Thermal CharacteristicsCharacteristics Symbol

MMBTA55MMBTA56Driver PNP312SOT-23MMBTA55 MMBTA56-60V -80CEO-60 -80-4.0-4.0-5MMBTA55=2H, MMBTA56=2GM(3) --60MMBTA55MMBTA56 -80- 0MMBTA55 -60MMBTA56-80- 0 -4.0u-0.1I =0)SB-0.1-6MMBTA55u-0.1-8MMBTA56_ _

MMBTA94COLLECTORHigh-Voltage PNP Transistor Surface Mount 3SOT-233P b Lead(Pb)-Free1BASE12 2EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -400 VdcCEOCollector-Base Voltage VCBO -400 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous ICmAdc-150Thermal CharacteristicsCharacteristics Symbol Max UnitMaximum Power

MMBTA05MMBTA06Driver NPN312SOT-23MMBTA05 MMBTA06VCEO 608060 804.04.0MMBTA05=1H, MMBTA06=1GM(3)60MMBTA05MMBTA06 800MMBTA05 60MMBTA06800 4.0u0.1I =0)SB0.16MMBTA05u0.18MMBTA06_ _

MMBTA42MMBTA43COLLECTORHigh-Voltage NPN Transistor33Surface Mount11BASE2P b Lead(Pb)-Free2EMITTERSOT-23Maximum Ratings (T =25C Unlesso therwise noted)ARating Symbol Value UnitCollector-Emitter Voltage MMBTA42 300VVCEO MMBTA43 200Collector-Base Voltage MMBTA42 300VVCBO MMBTA43 200Emitter-Base Voltage MMBTA42 6.0VEBO V MMBTA43 6.0C

MMBTA13MMBTA14COLLECTOR 3Darlington AmplifierTransistorsNPN BASE1EMITTER 2MA XIMUM R AT ING SR ating S ymbol Value UnitC ollector- E mitter Voltage V 30 V dcC E S 3C ollector- B as e Voltage V 30 V dcC B O1E mitter- B as e Voltage V 10 V dcE B O2C ollector C urrent - C ontinuous IC 300 mAdcT HE R MA L C HA R A C T E R IS T IC SS OT -23 C harac teris t

MMBTA44COLLECTOR3High-Voltage NPN Transistor SOT-233Surface Mount1BASE1 22EMITTERMaximum RatingsRating Symbol Value UnitC ollector-E mitter V oltage V 400 VdcCEOC ollector-B ase V oltage VCBO 450 VdcE mitter-B as e V Oltage VEBO 6.0 VdcC ollector C urrent-C ontinuous IC300 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipat

FM120-M WILLASTHRUMMBTA5xLT1Driver TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better revSiliconge current and thermal resistance.PNP erse leakaSOD-123H Low profile surface mounted application in order to optimi

FM120-M WILLASTHRUMMBTA94LT1PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200VTRANSISTORFM1200-M 1.0A SURFACE MOUNT SCHOTTKYSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent poweWe declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance.SOD-123Hcompliance with RoHS re

FM120-M WILLASTHRUMMBTA9xLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VHigh Voltage TransistorSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board

FM120-M WILLASTHRUMMBTA4xLT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VHigh Voltage TransistorsSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H RoHS product for packing code suffix "G" Low profile surface moun

FM120-M WILLASTHRUMMBTA0xLT1Driver TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toFEATURES optimize

MMBTA1xLT1Darlington Amplifier Transistors We declare that the material of productcompliance with RoHS requirements.ORDERING INFORMATIONDevice Marking ShippingMMBTA13LT1 1M 3000/Tape & ReelMMBTA14LT1 1N 3000/Tape & ReelMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage V CES 30 VdcSOT23CollectorBase Voltage V CBO 30 VdcEmitterBase Voltage V

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE High breakdown voltage 2. EMITTER Low collector-emitter saturation voltage 3. COLLECTOR Complementary to MMBTA92(PNP) MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (NPN) FEATURES High breakdown voltage Complementary to MMBTA42 MARKING:2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 MARKING:1D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units

MMBTA92 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA42 High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42. / Applications

MMBTA42 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,,, MMBTA92 High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92. / Applications

MMBTA94 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,High voltage, low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1B

MMBTA42T(BR3DG42T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA92T(BR3CG92T)High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MMBTA92T(BR3CG92T).

MMBTA94T Rev.E Mar.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

MMBTA92T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features ,,, MMBTA42T High voltage, low saturation voltage, low collector output capacitance, complementary pair with MMBTA42T. / Applications

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

MMBTA06 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features MMBTA56 Complementary to MMBTA56. / Applications Ideal for medium power amplification and switching. / Equivalent Circuit

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MMBTA42 / MMBTA43 NPN Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageAbsolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage MMBTA42 300 VCBO V MMBTA43 200 Collector Emitter Voltage MMBTA42 300 VCEO V MMBTA43 200 Emitter Base Voltage VEBO 6 VCollector Current IC 500 mAPowe

MMBTA10 / MMBTA11 NPN Silicon Epitaxial Planar Transistor VHF / UHF transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 oC)Parameter Symbol Rating UnitCollector Base Voltage VCBO 30 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 3 VCollector Current IC 100 mATotal Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperatur

MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCES 80 VEmitter Base Voltage -VEBO 4 VCollector Current -IC 500 mA

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage MMBTA92300 V -VCBO MMBTA93200 Collector Emitter Voltage MMBTA92 300 V -VCEO MMBTA93 200 5 VEmitter Base Voltage -VEBO 500 mACollector Cur

SEMICONDUCTORMMBTA92/93TECHNICAL DATAHigh Voltage TransistorPNP SiliconFEATUREHigh voltage.For Telephony or Professional communication equipment applications.We declare that the material of product compliance with RoHS requirements. 32DEVICE MARKING AND ORDERING INFORMATION1Device Marking ShippingSOT23 MMBTA92LT1G 2D 3000/Tape&Reel MMBTA92LT3G2D 10000/Tape&Ree

SEMICONDUCTORMMBTA42/43TECHNICAL DATAHigh Voltage TransistorsWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping3 MMBTA42LT1G 1D SOT-23 3000/Tape&Reel2 MMBTA42LT3G1D SOT-23 10000/Tape&Reel1 MMBTA43LT1G M1E SOT-23 3000/Tape&ReelSOT-23 10000/Tape&Reel SOT23 MMBTA43LT3G M1

SEMICONDUCTORMMBTA55/56TECHNICAL DATADriver TransistorsPNP SiliconWe declare that the material of productcompliance with RoHS requirements.321MAXIMUM RATINGSValueSOT23Rating Symbol MMBTA55 MMBTA56 UnitCollectorEmitter Voltage VCEO 60 80 Vdc3CollectorBase Voltage V 60 80 VdcCBOCOLLECTOREmitterBase Voltage V 4.0 VdcEBO1Colle

SEMICONDUCTORMMBTA94TECHNICAL DATAPNP EPITAXIAL PLANAR TRANSISTOR3We declare that the material of product2compliance with RoHS requirements.1DescriptionSOT23The MMBTA94 is designed for application that requires high voltage.COLLECTORFeatures3 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA 1BASEDEVICE MARKING2MMBTA94LT1G = 4ZEMITTERAbsolute

SEMICONDUCTORMMBTA14TECHNICAL DATADarlington Amplifier TransistorsWe declare that the material of productcompliance with RoHS requirements.3ORDERING INFORMATION2Device Marking Shipping1MMBTA13 1M 3000/Tape & ReelMMBTA14 1N 3000/Tape & ReelSOT23MAXIMUM RATINGSCOLLECTORRating Symbol Value Unit 3CollectorEmitter Voltage V 30 VdcCES1CollectorBase Vol

SEMICONDUCTORMMBTA42FTECHNICAL DATATRANSISTOR (NPN) MMBTA42FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A42 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

SEMICONDUCTORMMBTA55/56TECHNICAL DATADriver TransistorsPNP SiliconWe declare that the material of productcompliance with RoHS requirements.32MAXIMUM RATINGS1ValueRating Symbol MMBTA55 MMBTA56 UnitSOT23CollectorEmitter Voltage VCEO 60 80 VdcCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of product3compliance with RoHS requirements.2MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4.0 VdcEBOCollector Current Continuous I

SEMICONDUCTORMMBTA05/06TECHNICAL DATADriver TransistorsFEATURESWe declare that the material of productcompliance with RoHS requirements.DEVICE MARKINGMMB = 1H , MMBTA06 = 1GMTA0532MAXIMUM RATINGS1ValueRating Symbol MMBTA05 MMBTA06 UnitSOT23CollectorEmitter Voltage V 60 80 VdcCEOCollectorBase Voltage V 60 80 VdcCBOEmitterBase Voltage V 4

SEMICONDUCTORMMBTA44TECHNICAL DATANPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of product compliance with RoHS requirements.3Description2The MMBTA44 is designed for application that requires high voltage. 1Features SOT 23 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to MMBTA94COLLECTOR3DEVICE MARKING 1MMBTA44 = 3DB

SEMICONDUCTORMMBTH10QTECHNICAL DATAVHF/UHF TransistorsWe declare that the material of product compliance with RoHS requirements.Ordering InformationDevice Marking Shipping3000/Tape&Reel MMBTH10Q 3EQ3MAXIMUM RATINGS2Rating Symbol Value Unit1CollectorEmitter Voltage V CEO 25 V SOT23CollectorBase Voltage V CBO 30 VEmitterBase Voltage V EBO 3.0 VCOLLE

SEMICONDUCTORMMBTA92FTECHNICAL DATATRANSISTOR (PNP) MMBTA92FAC HGFEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage DDKF FMARKING : A92 DIM MILLIMETERSA 4.70 MAX_+B 2.50 0.20C 1.70 MAX1 2 3D 0.45+0.15/-0.10MAXIMUM RATINGS (Ta=25 unless otherwise noted) E 4.25 MAX_+F 1.50 0.10Symbol Parameter Value Unit G 0.40 T

SMD Type TransistorsPNP Transistors MMBTA92 (KMBTA92)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features3 High voltage transistor Low collector-emitter saturation voltage Complementary to MMBTA42 (NPN)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type TransistorsNPN TransistorsMMBTA42W (KMBTA42W) Features Collector-emitter voltage VCE = 300V Collector current IC = 500mA3 NPN high voltage transistorsCOLLECTOR1BASE1 Base2 Emitter3 Collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 300 Collector - Emitter Voltage VCEO 30

SMD Type TransistorsNPN Transistors MMBTA42 (KMBTA42)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 High breakdown voltage3 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

SMD Type DiodesDarlington TransistorsMMBTA13 (KMBTA13)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN TransistorsMMBTA45 (KMBTA45)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Collector-Emitter Voltage1 2+0.1+0.05 Complement to MMBTA93 0.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

SMD Type TransistorsPNP TransistorsMMBTA94 (KMBTA94) 3 Features High Breakdown Voltage Complement to MMBTA4412 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Voltage VCEO -40

SMD Type DiodesDarlington TransistorsMMBTA14 (KMBTA14)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN TransistorsMMBTA05 (KMBTA05)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=0.5A Collector Emitter Voltage VCEO=60V1 2 Driver transistor+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP TransistorsMMBTA56 (KMBTA56)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V1 2COLLECTOR+0.1+0.053 0.95 -0.1 0.1-0.01+0.11.9 -0.111.BaseBASE2.Emitter3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type TransistorsPNP TransistorsMMBTA55 (KMBTA55)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-60V1 2COLLECTOR+0.1+0.053 0.95 -0.1 0.1-0.01+0.11.9 -0.111.BaseBASE2.Emitter3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type TransistorsNPN TransistorsMMBTA06 (KMBTA06)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features For Switching and Amplifier Applications Complementary to MMBTA561 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Col

SMD Type TransistorsNPN TransistorsMMBTA44 (KMBTA44)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Collector-Emitter Voltage1 2+0.1+0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

MMBTA42NPN HIGH VOLTAGE TRANSISTOR300 Volt POWER 250 mWattVOLTAGEFEATURES0.120(3.04) NPN silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 300V Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard0.056(1.40)0.047(1.20)0.079(2.00) 0.008(0.20)0.070(1.80) 0.003(0.08)MECH

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (

PMMBTA06W NPN High Voltage Transistor 80V 225mW Voltage Power Features NPN silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-323 Package Terminals: Solderable per MIL-STD-750, Method 2026 Appr

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit: inch(mm) 60~80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable

MMBTA92-AUPNP HIGH VOLTAGE TRANSISTORSOT-23 Unit : inch(mm) VOLTAGE 300 Volt POWER 250 mWattFEATURES PNP silicon, planar design High voltage (max. 300V) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard AEC-Q101 qualifiedMECHANICAL DATA Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-750, Method 2026

General Purpose TransistorMMBTA42-G (NPN)RoHS DeviceFeaturesSOT-23 -High breakdown voltage.0.119(3.00)0.110(2.80) -Low collector-emitter saturation voltage.3 -Ultra small surface mount package.0.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10)

General Purpose TransistorMMBTA92-G (PNP)RoHS DeviceFeaturesSOT-230.119(3.00) -High voltage transistor.0.110(2.80)30.056(1.40)0.047(1.20)Diagram:1 20.079(2.00)Collector0.071(1.80)30.006(0.15)0.003(0.08)10.041(1.05) 0.100(2.550)Base0.035(0.90) 0.089(2.250)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimensions in

MMBTA92 TRANSISTOR PNPTRANSISTOR PNP FEATURES SOT-23 High voltage transistor 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -50

MMBTA56 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary Type NPN Transistor MMBTA06 General Purpose Amplifier ApplicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -80 VCollector-Emitter Voltage VCEO -80 VEm

MMBTA94TRANSISTOR (PNP) SOT23 FEATURES High Breakdown Voltage MARKING:4D MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -400 V 3. COLLECTOR V Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -Continuous -200 mA CI Collector Current -Pulsed

MMBTA55SOT-23 Plastic-Encapsulate TransistorsEquivalent Circuit:FEATURES: Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-60VSOT-231.BASE2.EMITTER3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -60 VCollector-Emitter Voltage VCEO -60 VEmitter-Base Voltage VEBO -4 VCollec

MMBTA44General Purpose Transistors NPN SiliconProduct Summary VCEO 400V Ic200mA PC 350mWFEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25unless otherwise noted)AParameter Symbol Limit UnitCollector-Base Voltage 400 VVCBOCollector-Emitter Voltage 400 V VCEOEmitter-Base Voltage VEBO V6A

MMBTA05W/MMBTA06W GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN SILICON EPITAXIAL PLANAR TRANSISTOR FORSWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = 500 mA PB FREE PRODUCT ARE AVAILABLE :98.5% SN ABOVE CAN MEET ROHSENVIRONMENT SUBSTANCE DIRECTIVE REQUEST MECHANICAL DATA CASESOT-323 TERMINALSSOLDERABLE PER MIL-STD-202G, MET

RUMW UMW MMBTA92SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBTA92 TRANSISTOR (PNP) FEATURES 1. BASE 2. EMITTER High voltage transistor 3. COLLECTOR MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Curre

RUMW UMW MMBTA42SOT-23 Plastic-Encapsulate TransistorsDimensions In Millimeters Dimensions In InchesSymbolMin. Max. Min. Max.A 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.950 TYP. 0.037 TYP.e1 1.800 2.000

RUMW UMW MMBTA05SOT-23 Plastic-Encapsulate TransistorsSOT-23 MMBTA05 TRANSISTOR (NPN) FEATURES 1. BASE Driver transistor 2. EMITTER 3. COLLECTOR MARKING :1H MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continu

RUMW UMW MMBTA06SOT-23 Plastic-Encapsulate TransistorsMMBTA06 TRANSISTOR (NPN) SOT-23 FEATURES For Switching and Amplifier Applications 1. BASE Complementary Type PNP Transistor MMBTA56 2. EMITTER MARKING: 1GM 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBOV Collector-Emitter V

MMBTA42 High Voltage NPN TransistorPackage outlineFeatures High voltageSOT-23 For telephony or professional communication equipment applications Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. MMBTA42-H(B)(C)(A)Mechanical data Epoxy:UL94-V0 rated flame retardant 0

MMBTA92FEATURES High Collector Current SOT-23 Complementary to MMBTA42MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -300 V CBOV Collector-Emitter Voltage CEO -300 V V Emitter-Base Voltage -5 V EBOIC Collector Current -0.2 A P Collector Power Dissipation 300 mW CR Thermal Resistance From Junction To

MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltageSOT-23 Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) 3211. BASEMarking: 1D 2.EMITTER3.COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO 300 VEmitter-Base Voltage VEBO 5 VCo

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA06 TRANSISTOR (NPN) FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 SOT23 MARKING: 1GM MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 80 V CBO1. BASE V Collector-Emitter Voltage 80 V CEO2. EMITTER V Em

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT23 Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO3. COLLECTOR V Emitter-Base Voltage

MMBTA9 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23High voltage transistor Marking: 2DSymbol Parameter Value Unit VCBO Collector-Base Voltage -300 V V Collector-Emitter Voltage -300 V CEOCV Emitter-Base Voltage -5 V EBOI Collector Current C-200mA ICM Collector Current - Pulsed -500 mA P Collector Power Dissipation

MMBTA4 2SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) Marking: 1DSymbol Parameter Value Unit VCBO Collector-Base Voltage 300 V V Collector-Emitter Voltage 300 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C

MMBTA4 4SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking: 3DSymbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current C200mA P Collector Power Dissipation 350 mW

MMBTA92PNP High Voltage AmplifierFEATURES Epitaxial planar die construction. Complementary NPN type available (MMBTA42). Ideal for medium power amplification and switching. APPLICATIONS High voltage driver applications. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specifiedSymbol Parameter Value UNITV collector-base voltage -300 VCBOV collector-

MMBTA92SOT-23 Plastic-Encapsulate TransistorMMBTA92 TRANSISTOR (PNP)SOT-23 FEATURES High voltage transistorMarking: 2D (3)C 1. BASE2D2. EMITTER3. COLLECTOR(1)B (2)E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitV VCBO Collector-Base Voltage -300VCEO Collector-Emitter Voltage V -300VEBO Emitter-Base Voltage -5 V IC Co

MMBTA42SOT-23 Plastic-Encapsulate TransistorSOT-23 MMBTA42 TRANSISTOR (NPN) FEATURES High breakdown voltage1. BASE Low collector-emitter saturation voltage2. EMITTER Complementary to MMBTA92 (PNP)3. COLLECTORMarking: 1D PACKAGE SPECIFICATIONS Box Size QTY/BoxReel DIA. Q'TY/Reel Carton Size Q'TY/CartonPackageReel Size(pcs) (pcs) (mm)(mm) (mm) (pcs)

www.msksemi.comMMBTA92-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP) FEATURES High voltage transistor 1. BASE2. EMITTERSOT23 MARKING:2D3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collecto

www.msksemi.comMMBTA44-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS1. BASEMARKING: 3D 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 400 V CEOV

www.msksemi.comMMBTA42-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92-MS (PNP)1. BASE2. EMITTERSOT23 Marking: 1D 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VColl

www.msksemi.comMMBTA94-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)FEATURES High Breakdown Voltage1. BASEMARKING:4D2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -400 V CBOV Collector-Emitter Voltage -400 V CEOV Emitter-Base Voltage -5 V EBOI Co

MMBTA94PNP TransistorFeaturesSOT-23 For high voltage switching and amplifier applications The transistor is subdivided into one group according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (Ta=25)Parameter Symbol Value UnitsCollector Base Voltage -V 400 VCBOCollector Emitter Voltage -V 400 VCEOEmitter Base Voltage -V 6 VEBOC

MMBTA44 NPN Transistor FeaturesSOT-23 (TO-236) For High Voltage Switching and AmplifierApplications.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 500 V CBOCollector Emitter Voltage V 400 V CEOEmitter Base Voltage V 6 V EBOCollector Cur

Jingdao Microelectronics co.LTD MMBTA92 MMBTA92SOT-23PNP TRANSISTOR3FEATURES High Voltage Transistor1MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol 2Parameter Value Unit VCBO V 1.BASECollectorBase Voltage -3002.EMITTERVCEO VCollectorEmitter Voltage -3003.COLLECTOR VEBO VEmitterBase V

Jingdao Microelectronics co.LTD MMBTA42MMBTA42SOT-23NPN TRANSISTOR3FEATURES High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP)12MAXIMUM RATINGS (Ta=25 unless otherwise noted)1.BASEParameter Symbol Value Unit2.EMITTER3.COLLECTOR VCBOCollectorBase Vo

MMBTA92SOT-23 Plastic-Encapsulate Transistors MMBTA92 TRANSISTOR (PNP) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continu

MMBTA42 SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN)FEATURES High breakdown voltage Low collector-emitter saturation voltageSOT-23 Complementary to MMBTA92 (PNP)1 BASE 2 EMITTER 3 COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValuealueCollector-Base Voltage VCBO 300 VCollector-Emitter Voltage VCEO

MMBTA44SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA941. BASEMARKING: 3D 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Co

MMBTA92 TRANSISTOR (PNP)SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES High voltage transistor 1BASE 2EMITTER 3COLLECTOR MARKING:2DMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 m

MMBTA92 SOT-23 PNP Transistors32 1.Base Features2.Emitter1 3.Collector High voltage transistor Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA42 (NPN) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -300 Collector - Emitter Voltage VCEO -300 V Emitter

MMBTA42 SOT-23 NPN Transistors32 1.Base Features2.Emitter High breakdown voltage1 3.Collector Low collector-emitter saturation voltage Simplified outline(SOT-23) Complementary to MMBTA92 (PNP) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 300Collector - Emitter Voltage VCEO 300 VEmitter - Base V

MMBTA92TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: High Breakdown VoltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO -300 VCollector-Emitter Voltage VCEO -300 VEmitter-Base Voltage VEBO -5 VCollector Current -Continuous IC -200 mACollector Current -Puised ICM -

MMBTA42 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBTA92 Collector Current: Ic=0.5A High breakdown voltage Low collector-emitter saturation voltageMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 300 VCollector-Base VoltageVCEO 300 VCollector-Emitter Volta

MMBTA42 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA92 ; Complementary to MMBTA92 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBTA94 TRANSISTOR(PNP) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA44 ; Complementary to MMBTA44 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBTA05 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Driver transistor 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

MMBTA06 TRANSISTOR(NPN) SOT-23 SOT-23 Plastic-Encapsulate Transistors SOT-23 Features For Switching and Amplifier Applications MMBTA56 ; Complementary to MMBTA56 300mW; Power Dissipation of 300mW High Stability and High Reliability Me

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

RoHS RoHSCOMPLIANT COMPLIANTMMBTA92 PNP Silicon High Voltage Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-23 P Terminals: Tin plated leads, s

RoHS RoHSCOMPLIANT COMPLIANTMMBTA42 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

RoHS RoHSCOMPLIANT COMPLIANTMMBTA05 THRU MMBTA06 NPN General Purpose Amplifier transistors Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Moldi

RoHS RoHSCOMPLIANT COMPLIANTMMBTA55 THRU MMBTA56 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic InsertionMechanical Data Package: SOT-23 Molding compound

RoHS RoHSCOMPLIANT COMPLIANTMMBTA06Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications NPN General Purpose Amplifier Mechanical Data Case: SOT-23 Terminals: Tin plated leads, solde

RoHS RoHSCOMPLIANT COMPLIANTMMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBTA92 TRANSISTOR (PNP) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR High voltage transistor MARKING:2D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200

SOT-23 Plastic-Encapsulate Transistors MMBTA42 TRANSISTOR (NPN) FEATURES SOT-23 High breakdown voltage 1. BASE Low collector-emitter saturation voltage 2. EMITTER Complementary to MMBTA92 (PNP) 3. COLLECTOR Marking: 1D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitCollector-Base Voltage VCBO 300 VVCEO Collector-Emitter Voltage 3

SOT-23 Plastic-Encapsulate TransistorsMMBTA55 TRANSISTOR (PNP)FEATURES Driver TransistorsMARKING:1H1.Base 2.Emitter 3.CollectorSOT-23 Plastic PackageMAXIMUM RATINGS (T =25 unless otherwise noted)aSymbol Parameter Value UnitV Collector-Base Voltage -60 VCBOV Collector-Emitter Voltage -60 VCEOVEBO Emitter-Base Voltage -4 VI Collector Current -500 mACP Colle

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA42/MMBTA43 MAXIMUM RATINGS Characteristic Symbol GMA42 GMA43 Unit (MMBTA42) (MMBTA43) Collector-Emitter VoltageVCEO 300 200 Vdc-Collector-Base VoltageVCBO 300 200 Vdc-Emitter-Base VoltageVEBO 6.0 6.0

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA94FEATURES MAXIMUM RATINGS Characteristic Symbol Rating Unit V -400 VCollector-Emitter Voltage - CEOCollector-Base Voltage - V -400 VCBOEmitter-Base Voltage V -7 V

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA92/MMBTA93 MAXIMUM RATINGS Characteristic Symbol Unit(MMBTA92) (MMBTA93) Collector-Emitter VoltageVCEO -300 -200 Vdc-Collector-Base VoltageVCBO -300 -200 Vdc-Emitter-Base VoltageVEBO -6.0 -6.0 Vdc

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA44 MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collector-Base Voltage - VCBO 400 VVEBOEmitter-Base Voltage - 7 VCollector Current

MMBTA92PNP GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE -300Volts POWER 300mWattsFEATURESPNP epitaxial silicon, planar design. Collector-emitter voltage VCE=-300V.Collector current IC=-0.3A.ansition frequency fT>200MHz @ IC=-Tr20mAdc, VCE=-50Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminal

MMBTA42NPN GENERAL PURPOSE SWITCHING TRANSISTOR300Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=300V.Collector current IC=0.3A.ansition frequency fT>50MHz @ TrIC=10mAdc, VCE=20Vdc, f=30MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Sol

MMBTA92BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA42 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

MMBTA42BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA92 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

MMBTA94BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to MMBTA44 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

MMBTA44BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A