Справочник транзисторов. MMUN2113LT1

 

Биполярный транзистор MMUN2113LT1 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MMUN2113LT1
   Маркировка: A6C
   Тип материала: Si
   Полярность: Pre-Biased-PNP
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT23

 Аналоги (замена) для MMUN2113LT1

 

 

MMUN2113LT1 Datasheet (PDF)

 0.1. Size:215K  onsemi
mmun2111lt1g mmun2111lt3g mmun2112lt1g mmun2113lt1g mmun2113lt3g mmun2114lt1g mmun2114lt3g mmun2115lt1g.pdf

MMUN2113LT1
MMUN2113LT1

MMUN2111LT1G,SMMUN2111LT1G,NSVMMUN2111LT1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorshttp://onsemi.comwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkSO

 4.1. Size:119K  onsemi
nsvmmun2113lt3g.pdf

MMUN2113LT1
MMUN2113LT1

MUN2113, MMUN2113L,MUN5113, DTA144EE,DTA144EM3, NSBA144EF3Digital Transistors (BRT)R1 = 47 kW, R2 = 47 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (BRT

 7.1. Size:188K  motorola
mmun2111lt1rev0d.pdf

MMUN2113LT1
MMUN2113LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s

 7.2. Size:267K  motorola
mmun2111.pdf

MMUN2113LT1
MMUN2113LT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMUN2111LT1/DBias Resistor TransistorMMUN2111LT1PNP Silicon Surface Mount Transistor withSERIESMonolithic Bias Resistor NetworkMotorola Preferred DevicesThis new series of digital transistors is designed to replace a single device and itsexternal resistor bias network. The BRT (Bias Resistor Transistor) contains a s

 7.3. Size:111K  onsemi
nsvmmun2112lt1g.pdf

MMUN2113LT1
MMUN2113LT1

MUN2112, MMUN2112L,MUN5112, DTA124EE,DTA124EM3, NSBA124EF3Digital Transistors (BRT)R1 = 22 kW, R2 = 22 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (

 7.4. Size:190K  onsemi
mmun2111lt1.pdf

MMUN2113LT1
MMUN2113LT1

MMUN2111LT1G SeriesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a serie

 7.5. Size:199K  wietron
mmun2111.pdf

MMUN2113LT1
MMUN2113LT1

MMUN2111 SeriesBias Resistor TransistorCOLLECTOR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipa

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