Биполярный транзистор MMUN2132LT2 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMUN2132LT2
Маркировка: A6J
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: SOT23
Аналоги (замена) для MMUN2132LT2
MMUN2132LT2 Datasheet (PDF)
nsvmmun2132lt1g.pdf
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nsvmmun2135lt1g.pdf
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mun2130 mmun2130l mun5130 dta113ee dta113em3 nsba113ef3.pdf
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nsvmmun2131lt1g.pdf
MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B
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nsvmmun2133lt1g.pdf
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mmun2135.pdf
MMUN2135Bias Resistor TransistorCOLLECT OR33PNP Silicon R 11BASER 2122EMITTERSOT-23( T =25 C unless otherwise noted)Maximum Ratings ARating Symbol Value UnitCollector-Emitter Voltage V 50CEO VdcVdcCollector-Base Voltage VCBO 50Collector Current-Continuous IC mAdc100Thermal CharacteristicsMax UnitCharacteristics SymbolTotal Device Dissipation F
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History: NA41UH
History: NA41UH
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