MP16 - описание и поиск аналогов

FMP16N60ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

FMP16N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

FMP16N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (4.2 0.5V

FMP16N60E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0 0.5V)

TMP16N25Z(G)/TMPF16N25Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A

TMP16N60A(G)/TMPF16N60A(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 16A

TMP16N60/TMPF16N60 TMP16N60G/TMPF16N60G VDSS = 660 V @Tjmax Features ID = 16A Low gate charge RDS(on) = 0.47 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP16N60 / TMPF16N60 TO-220 / TO-220F TMP16N60 / TMPF16N60 RoHS TMP16N60G / TMPF16N60G

WML16N65SR, W 65SR, WM SR WMK16N6 MM16N65S WMN16N65SR, WMP16N6 MO16N65S 65SR, WM SR 650V 0.31 S unction P MOSFET 0 Super Ju Power M T Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge perfo

WML16N70SR, W 70SR, WM SR WMK16N7 MM16N70S WMN16N70SR, WMP16N7 MO16N70S 70SR, WM SR 700V 0.31 S unction P MOSFET 0 Super Ju Power M T Descrip ption WMOSTM SR is Wa new generation super ayon s w junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G T and low ga charge perfo

TMP160N10A Wuxi Unigroup Microelectronics Company 100V N-Channel Trench MOSFET FEATURES High Density Cell Design for Ultra Low Rdson Fully Characterized Avalanche Voltage and Current Good Stability with High EAS Excellent Package for Good Heat Dissipation APPLICATIONS Power Switching Application Hard Switched and High Frequency Circuits Uninter

TMB160N08A,TMP160N08A Wuxi Unigroup Microelectronics CO.,LTD. 80V N-Channel Trench MOSFET Product Summary Features Trench Power Technology VDS 80V Low RDS(ON) RDS(ON) (at VGS=10V)