Биполярный транзистор MPQ2222R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MPQ2222R
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 175 °C
Граничная частота коэффициента передачи тока (ft): 250 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: TO116
MPQ2222R Datasheet (PDF)
mmpq2222.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMPQ2222/DQuad General PurposeMMPQ2222Transistors*MMPQ2222A1 16NPN Silicon2 15*Motorola Preferred Device3 144 135 126 117 108 916MAXIMUM RATINGS1Rating Symbol MMPQ2222 MMPQ2222A UnitCASE 751B05, STYLE 4CollectorEmitter Voltage VCEO 30 40 VdcSO16CollectorBase Voltage VCB 60 7
mmpq2222.pdf
MMPQ2222B4E4NPN Multi-Chip General Purpose AmplifierB3E3B2 This device is for use as a medium power amplifier and switch E2B1requiring collector currents up to 500mA. C4E1C4C3 Sourced from process 19.C3C2C2C1C1SOIC-16Mark: MMPQ2222Absolute Maximum Ratings * Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Vol
ffb2222a fmb2222a mmpq2222a.pdf
FMB2222AFFB2222A MMPQ2222AB4E2C2E4B2 B3E1E3C1 B2C1E2B1E1C4C4C2B2C3SC70-6B1E2 C3Mark: .1Ppin #1 E1 C2pin #1 B1C2SOIC-16C1NOTE: The pinouts are symmetrical; pin 1 and pinC1Mark:SuperSOT-6 pin #14 are interchangeable. Units inside the carrier canMMPQ2222AMark: .1Pbe of either orientation and will not affect thefunctionality
mpq2222.pdf
MPQ2222 MPQ2222A NPN SILICON QUAD TRANSISTOR145 Adams Ave., Hauppauge, NY 11788 USA Phone (631) 435-1110 FAX (631) 435-1824 www.centralsemi.com TO-116 CASE Manufacturers of World Class Discrete SemiconductorsDESCRIPTION: The CENTRAL SEMICONDUCTOR MPQ2222, MPQ2222A types are comprised of four independent Silicon NPN Transistors mounted in a 14 PIN DIP, designed for general
mmpq2222a.pdf
MMPQ2222APreferred DeviceQuad General PurposeTransistorNPN Siliconhttp://onsemi.com1MAXIMUM RATINGS 162 15Rating Symbol Value Unit3 144 13Collector-Emitter Voltage VCEO 40 Vdc5 126 11Collector-Base Voltage VCB 75 Vdc7 10Emitter-Base Voltage VEB 5.0 Vdc8 9Collector Current - Continuous IC 500 mAdcFourTransistorsEqual PowerTotal Power Dissipation PD W
ffb2222a fmb2222a mmpq2222a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CHDTA115TUGP | DTA123JSA
History: CHDTA115TUGP | DTA123JSA
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050