Биполярный транзистор MPS2925 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MPS2925
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 100 °C
Ёмкость коллекторного перехода (Cc): 12 pf
Статический коэффициент передачи тока (hfe): 235
Корпус транзистора: TO92
MPS2925 Datasheet (PDF)
mps2711 2n2711 mps2712 2n2712 mps2716 2n2716 mps2923 2n2923 mps2924 2n2924 mps2925 2n2925 mps3390 2n3390 mps3391 2n3391 mps3392 2n3392 mps6573 mps6574.pdf
mps2907 mps2907r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS2907/DGeneral Purpose TransistorsMPS2907PNP Silicon*MPS2907ACOLLECTOR*Motorola Preferred Device32BASE1EMITTERMAXIMUM RATINGS12Rating Symbol MPS2907 MPS2907A Unit3CollectorEmitter Voltage VCEO 40 60 VdcCASE 2904, STYLE 1CollectorBase Voltage VCBO 60 VdcTO92 (TO226A
mps2907-h.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MPS2907-L/HMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MPS2907A-L/HFax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. PNP Silicon Collector-current -0.6A Plastic-Encapsulate Collector-base Voltage -60V Operating and storage junction temperature range: -55OC
mps2907a-l.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MPS2907-L/HMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MPS2907A-L/HFax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. PNP Silicon Collector-current -0.6A Plastic-Encapsulate Collector-base Voltage -60V Operating and storage junction temperature range: -55OC
mps2907-l.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MPS2907-L/HMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MPS2907A-L/HFax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. PNP Silicon Collector-current -0.6A Plastic-Encapsulate Collector-base Voltage -60V Operating and storage junction temperature range: -55OC
mps2907a-h.pdf
MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth MPS2907-L/HMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MPS2907A-L/HFax: (818) 701-4939Features Capable of 0.625Watts of Power Dissipation. PNP Silicon Collector-current -0.6A Plastic-Encapsulate Collector-base Voltage -60V Operating and storage junction temperature range: -55OC
mps2907a.pdf
MPS2907APreferred DeviceGeneral PurposeTransistorsPNP Siliconhttp://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2CollectorEmitter Voltage VCEO 60 VdcBASECollectorBase Voltage VCBO 60 Vdc1EmitterBase Voltage VEBO 5.0 VdcEMITTERCollector Current Continuous IC 600 mAdcSTYLE 1Total Device Dissipation PD@ TA = 25C 625
mps2907a.pdf
MPS2907APNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92COLLECTOR32BASE FEATURES 1. Epitaxial Planar Die Construction1EMITTER23. Complementary NPN Type Available (MPS2222A). Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS RATING SYMBOL VALUE U
mps2907 a.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR EPITAXIAL TRANSISTORS MPS2907MPS2907ATO-92Plastic PackageGeneral Purpose TransistorsABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL MPS2907 MPS2907A UNITSVCEOCollector Emitter Voltage 40 60 VVCBOCollector Base Voltage 60 75 VVEBO
mps2907a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP)1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit MPS 2907A Z
mps2907a.pdf
MPS2907ATO-92 Transistor (PNP)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary NPN Type available (MPS2222A) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V Dimensions in inches and (millimeters)VEBO Emitter-Base Voltage -5 V IC Collector Current -Con
mps2907.pdf
MPS2907TO-92 Transistor (PNP)TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary NPN Type available (MPS2222) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 VVCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.6 A Dimensions in inches and (
mps2907.pdf
MPS2907MPS2907ACOLLECTOR3PNP General Purpose TransistorsTO-922BASE112EMITTER3MAXIMUM RATINGSRating Symbol 2907 Unit2907ACollector-Emitter Voltage V -40 VdcCEO -60Collector-Base Voltage VCBO -60 VdcEmitter-Base VOltage VEBO -5.0 VdcCollector Current-Continuous ICmAdc-600THERMAL CHARACTERISTICSCharacteristics Symbol Max UnitTotal Device Dissipatio
mps2907a.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 MPS2907A TRANSISTOR (PNP) 1. EMITTER FEATURES Complementary NPN Type available (MPS2222A) 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2 3 Symbol Parameter Value UnitsVCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO
mps2907.pdf
SEMICONDUCTORMPS2907TECHNICAL DATAFEATURES B CComplementary NPN Type available (MPS2222) DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDMAXIMUM RATINGS (TA=25 unless otherwise noted) D 0.55 MAXE 1.00F 1.27Symbol Parameter Value Units G 0.85H 0.45_VCBO Collector-Base Voltage -60 V HJ 14.00 + 0.50L 2.30F FM 0.51 MAXVCEO Collector-Emitter Volta
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