Биполярный транзистор MPS6552
Даташит. Аналоги
Наименование производителя: MPS6552
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.31
W
Макcимально допустимое напряжение коллектор-база (Ucb): 35
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.6
A
Предельная температура PN-перехода (Tj): 135
°C
Граничная частота коэффициента передачи тока (ft): 650
MHz
Ёмкость коллекторного перехода (Cc): 0.7
pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора:
TO92
- подбор биполярного транзистора по параметрам
MPS6552
Datasheet (PDF)
9.1. Size:173K motorola
mps650re.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS650/DNPNAmplifier TransistorsMPS650*MPS651COLLECTOR COLLECTOR3 3 PNPMPS7502 2BASE BASE*MPS751NPN PNPVoltage and current are1 1negative for PNP transistorsEMITTER EMITTER*Motorola Preferred DevicesMAXIMUM RATINGSMPS650 MPS651MPS750 MPS751Rating Symbol UnitCollectorEmitter Voltage V
9.2. Size:279K motorola
mps6571r.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6571/DAmplifier TransistorNPN Silicon MPS6571COLLECTOR32BASE112EMITTER 3MAXIMUM RATINGSCASE 2904, STYLE 1TO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 25 VdcEmitterBase Voltage VEBO 3.0 VdcCollector Current Continuous
9.3. Size:69K motorola
mps6560r.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6560/DAudio TransistorMPS6560NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 25 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous I
9.4. Size:59K motorola
mps6507r.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6507/DAmplifier TransistorCOLLECTORMPS6507NPN Silicon32BASE1EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit23CollectorEmitter Voltage VCEO 20 VdcCollectorBase Voltage VCBO 30 VdcCASE 2904, STYLE 1TO92 (TO226AA)EmitterBase Voltage VEBO 3.0 VdcCollector Current Continuo
9.5. Size:304K motorola
mps6530r.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6530/DAmplifier TransistorMPS6530NPN SiliconCOLLECTOR32BASE1213EMITTERCASE 2904, STYLE 1MAXIMUM RATINGSTO92 (TO226AA)Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuo
9.6. Size:551K motorola
mps6521rev0.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6521/DCOLLECTOR 3Amplifier Transistors NPN2BASE*MPS6521 PNP1 EMITTERMPS6523COLLECTOR 3Voltage and current are negative for PNP transistors2BASE*Motorola Preferred Device1 EMITTERMAXIMUM RATINGSRating Symbol NPN PNP UnitCollectorEmitter Voltage VCEO VdcMPS6521 25 MPS6523 25C
9.7. Size:791K motorola
mps6520r.pdf 

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPS6520/DCOLLECTOR 3Amplifier Transistors NPN2MPS6520BASE*MPS65211 EMITTER PNPMPS6523COLLECTOR 3Voltage and current are negative2 for PNP transistorsBASE*Motorola Preferred Device1 EMITTERMAXIMUM RATINGSRating Symbol NPN PNP UnitCollectorEmitter Voltage VCEO VdcMPS6520, MPS6521 25
9.8. Size:103K fairchild semi
mmbt6515 mps6515.pdf 

MPS6515/MMBT6515NPN General Purpose Amplifier3 This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a 2switch and to 100MHz as an amplifier.SOT-23TO-92 1Mark: 3J11. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* TC=25C unless otherwise notedSymbol Parameter Valu
9.9. Size:292K fairchild semi
mps6518.pdf 

Discrete POWER & SignalTechnologiesMPS6518C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 100 mA. Sourcedfrom Process 66. See 2N3906 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V
9.10. Size:293K fairchild semi
mps6562.pdf 

Discrete POWER & SignalTechnologiesMPS6562C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 67. See TN4033A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 V
9.11. Size:292K fairchild semi
mps6523.pdf 

Discrete POWER & SignalTechnologiesMPS6523C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 68. See PN200 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VV
9.12. Size:57K fairchild semi
mps651.pdf 

MPS651Switching and Amplifier ApplicationsTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 80 VVCEO Collector-Emitter Voltage 60 VVEBO Emitter-Base Voltage 5 VIC Collector Current 0.8 APC Collector Dissipation 625 mWTJ Junction Temperat
9.13. Size:292K fairchild semi
mps6531.pdf 

Discrete POWER & SignalTechnologiesMPS6531C TO-92BENPN General Purpose AmplifierThis device is designed for use as a medium power amplifierand switch requiring collector currents to 500 mA. Sourcedfrom Process 19. See PN2222A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VV C
9.14. Size:126K fairchild semi
mps6513.pdf 

September 2007MPS6513NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier. Sourced from Proces 23. TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Ba
9.15. Size:25K fairchild semi
mps6521.pdf 

MPS6521NPN General Purpose Amplifier This device is deisgned for general purpose amplifier applications at collector to 300mA. Sourced from process 10.TO-9211. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 4
9.16. Size:47K fairchild semi
mps6514.pdf 

MPS6514NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 25 VVCBO Collector-Base Vo
9.17. Size:292K fairchild semi
mps6534.pdf 

Discrete POWER & SignalTechnologiesMPS6534C TO-92BEPNP General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 500 mA. Sourcedfrom Process 63. See PN2907A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 V
9.18. Size:44K central
mps6520-mps6521.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
9.20. Size:111K central
mps651x series.pdf 

DATA SHEETNPN PNPMPS6512 MPS6516MPS6513 MPS6517MPS6514 MPS6518 MPS6515 MPS6519COMPLEMENTARY SILICON TRANSISTORS JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS6512 Series (NPN) and MPS6516 Series (PNP) types are molded Epoxy Silicon Small Signal Transistors designed for general-purpose amplifier applications. MAXIMUM RATINGS (TA=25C unless otherwise noted)
9.21. Size:68K onsemi
mps650 mps651 mps750 mps751.pdf 

NPN - MPS650, MPS651;PNP - MPS750, MPS751MPS651 and MPS751 are Preferred DevicesAmplifier TransistorsFeatures Pb-Free Packages are Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60
9.22. Size:43K onsemi
mps6560-d.pdf 

MPS6560Audio TransistorNPN SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 25 Vdc2BASECollector -Base Voltage VCBO 25 VdcEmitter -Base Voltage VEBO 5.0 Vdc1Collector Current - Continuous IC 500 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 WDerate abo
9.23. Size:106K onsemi
mps651rlrmg.pdf 

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
9.24. Size:166K onsemi
mps6521 mps6523.pdf 

MPS6521 (NPN)MPS6523 (PNP)MPS6521 is a Preferred DeviceAmplifier TransistorsFeatures Voltage and Current are Negative for PNP Transistorshttp://onsemi.com Pb-Free Packages are Available*COLLECTORCOLLECTORMAXIMUM RATINGS33Rating Symbol NPN PNP Unit22Collector -Emitter Voltage VCEO VdcBASEBASEMPS6521 25 -MPS6523 - 2511Collector -Base Voltage VCB
9.25. Size:106K onsemi
mps651g.pdf 

NPN - MPS650, MPS651;PNP - MPS750, MPS751Amplifier TransistorsFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector-Emitter Voltage VCE VdcCOLLECTORNPNMPS650; MPS750 403MPS651; MPS751 601EMITTERCollector-Base Voltage VCB Vdc2MPS650; MPS750 60BASEMPS651; MPS751 80PNPEmitter-Base V
9.26. Size:217K secos
mps651.pdf 

MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES G HSwitching and Amplifier Applications JA DCollector Millimeter REF. Min. Max. 2 BA 4.40 4.70 B 4.30 4.70 KC 12.70 - D 3.30 3.81 3 E 0.36 0.56 Base F 0.36 0.51 E C F
9.27. Size:250K cdil
mps6530 31.pdf 

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPS6530MPS6531TO-92Plastic PackageCBEAMPLIFIER TRANSISTORABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 40 VVCBOCollector Base Voltage 60 VVEBOEmitter Base Voltage 5 VICCollector Current Conti
9.28. Size:191K cdil
mps650 51 mps750 51.pdf 

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN/PNP SILICON PLANAR AMPLIFIER TRANSISTORS MPS650 , MPS651 (NPN)MPS750 , MPS751 (PNP)TO -92CBEAMPLIFIER TRANSISTORSABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL MPS650 MPS651 UNITSMPS750 MPS751Collector -Emitter Voltage VCEO 40 60 VCollector -Base Voltage VCBO 60 80 VEmitter -Base Vo
9.29. Size:349K cdil
mps6560-2.pdf 

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON PLANAR EPITAXIAL TRANSISTORS MPS6560 NPNMPS6562 PNPTO-92Plastic PackageCBEAudioTransistorsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITSVCBOCollector Base Voltage 25 VVCEOCollector Emitter Voltage 25 VVEBOEmitter Base Voltage 5.0 VICCollector Current Con
9.30. Size:424K jiangsu
mps651.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPS651 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE General Purpose Amplifier3.COLLECTOR Equivalent Circuit MPS651=Device code MPS651 Solid dot=Green molding compound device, if none,the normal deviceXXX=Code
9.31. Size:350K kec
mps651.pdf 

SEMICONDUCTOR MPS651TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEB CFEATURESHigh Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERSHigh Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAXWide Area of Safe Operation. GC 3.70 MAXDComplementary to MPS751.D 0.45E 1.00F 1.27G
9.37. Size:159K first silicon
mps651.pdf 

SEMICONDUCTORMPS651TECHNICAL DATAMPS651 TRANSISTOR (NPN) B CFEATURES General Purpose Amplifier DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00F 1.27MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85H 0.45_HJ 14.00 + 0.50Symbol Parameter Value Unit L 2.30F FM 0.51 MAXVCBO Collector-Base Voltage 80 V VCEO Collector-Em
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History: BDX86
| KT8251A
| 2SC4061
| TI414
| CX956D
| HEPS3054
| SS218