MPSA45 - описание и поиск аналогов

 ..1. Size:270K  utc
 mpsa44 mpsa45.pdf 

UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 1 FEATURES TO-252 SOT-89 * Collector-Emitter Voltage * V =400V (UTC MPSA44) CEO * V =350V (UTC MPSA45) CEO * Collector Current up to 300mA 1 1 TO-92NL TO-92 1 TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 ..2. Size:359K  kec
 mpsa44 mpsa45.pdf 

SEMICONDUCTOR MPSA44/45 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Collector Power Dissipation PC=625mW. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA44 500 H 0.45 Collector-Base _ VCBO H V J 14.00

 0.1. Size:30K  utc
 mpsa44 mpsa45-utc.pdf 

UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation Pc(max)=625mW APPLICATION *Telephone switching TO-92 *High voltage switch 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature ra

 9.1. Size:170K  motorola
 mpsa44re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA44/D High Voltage Transistor NPN Silicon MPSA44 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 400 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 500 Vdc Emitter Base Voltage VEBO 6.0 Vdc

 9.2. Size:121K  motorola
 mpsa42 mpsa43.pdf 

 9.3. Size:47K  philips
 mpsa44 4.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA44 NPN high-voltage transistor 1999 Apr 27 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 collector 2 base APPLICATIONS 3 emitter

 9.4. Size:104K  philips
 mpsa42 mpsa43 2.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors Product data sheet 2004 Oct 11 Supersedes data of 1999 Apr 12 NXP Semiconductors Product data sheet NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATIONS 3 em

 9.5. Size:47K  philips
 mpsa42 mpsa43 4.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA42; MPSA43 NPN high-voltage transistors 1999 Apr 12 Product specification Supersedes data of 1997 Sep 04 Philips Semiconductors Product specification NPN high-voltage transistors MPSA42; MPSA43 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 collector 2 base APPLICATION

 9.6. Size:128K  fairchild semi
 mpsa42 mmbta42 pzta42.pdf 

October 2009 MPSA42 / MMBTA42 / PZTA42 NPN High Voltage Amplifier Features This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42 C C E E C B B SOT-23 TO-92 SOT-223 Mark 1D E B C Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Valu

 9.7. Size:26K  fairchild semi
 mpsa43.pdf 

MPSA43 NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from process 48. See MPSA42 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 200 V VC

 9.8. Size:121K  fairchild semi
 mpsa42.pdf 

MPSA42 MMBTA42 PZTA42 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1D NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 300 V VCBO Collect

 9.9. Size:43K  central
 mpsa42 mpsa43npn.pdf 

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.10. Size:233K  mcc
 mpsa42 mpsa43 to-92.pdf 

MPSA42 MCC Micro Commercial Components TM THRU 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 MPSA43 Fax (818) 701-4939 Features NPN Silicon High Through Hole Package 150oC Junction Temperature Voltage Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 625mW Lead Free Finish/RoHS Compliant

 9.11. Size:66K  onsemi
 mpsa44-d.pdf 

MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 400 Vdc 2 BASE Collector -Base Voltage VCBO 500 Vdc Emitter -Base Voltage VEBO 6.0 Vdc 1 Collector Current - Continuous IC 300 mAdc EMITTER Total Device Dissipation @ TA

 9.12. Size:160K  onsemi
 mpsa42g mpsa42rl1g mpsa42rlrag mpsa42rlrmg mpsa42rlrpg mpsa42zl1g.pdf 

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.13. Size:102K  onsemi
 mpsa42 mpsa43.pdf 

MPSA42, MPSA43 High Voltage Transistors NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc 1 MPSA43 200 EMITTER MPSA42 300 Collector-Base Voltage VCBO Vdc MPSA43 200 MPSA42 300 Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 500 mAdc TO

 9.14. Size:176K  utc
 mpsa44h.pdf 

UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage * V =400V CEO * Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape Reel MPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box

 9.15. Size:17K  utc
 mpsa42 mpsa43.pdf 

UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MPSA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES *Collector-Emitter voltage 1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43) *High current gain *Complement to UTC MPSA92/93 TO-92 *Collector Dissipation Pc(max)=625mW 1 EMITTER 2 BASE

 9.16. Size:437K  secos
 mpsa44.pdf 

MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. Collector

 9.17. Size:112K  secos
 mpsa42.pdf 

MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. Collector

 9.18. Size:190K  cdil
 mpsa42 43.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42 MPSA 43 TO-92 CBE C B E High Voltage Transistors. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL MPSA42 MPSA43 UNIT Collector -Emitter Voltage VCEO 300 200 V Collector -Base Voltage VCBO 300 200 V Emitter -B

 9.19. Size:273K  cdil
 mpsa44 45.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package C B E High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA44 MPSA45 UNITS VCBO Collector Base Voltage 500 400 V VCEO Collector Emitter Voltage 400 350 V VEBO

 9.20. Size:473K  jiangsu
 mpsa44.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA44 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR Equivalent Circuit FE

 9.21. Size:838K  jiangsu
 mpsa42.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN)FEATURES TO-92 High voltage 1. EMITTER 2. BASE 3. COLLECTOR Equivalent Circuit A42=Device code Solid dot=Green molding compound device, A42 Z if none,the normal device Z=Rank of hFE XXX=Code 1 ORDERING INFORMATION Part Number Package Pack

 9.22. Size:233K  kec
 mpsa42 mpsa43.pdf 

SEMICONDUCTOR MPSA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C FEATURES Complementary to MPSA92/93. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA42 300 H 0.45 Collector-Base _ VCBO H V J 14.00 + 0.50 Volta

 9.23. Size:552K  kec
 mpsa43.pdf 

SEMICONDUCTOR MPSA42/43 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C FEATURES Complementary to MPSA92/93. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA42 300 H 0.45 Collector-Base _ VCBO H V J 14.00 + 0.50 V

 9.24. Size:911K  wietron
 mpsa44.pdf 

MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 400 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

 9.25. Size:408K  wietron
 mpsa43.pdf 

MPSA43 High-Voltage NPN Transistors 1. EMITTER P b Lead(Pb)-Free 2. BASE 3. COLLECTOR 1 2 3 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 200 Vdc Collector-Base Voltage VCBO 200 Vdc VEBO Emitter-Base Voltage Vdc 6.0 Collector Current IC 500 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150

 9.26. Size:155K  wietron
 mpsa42.pdf 

MPSA42 General Purpose Transistors NPN Silicon TO-92 1 1. EMITTER 2 3 2. BASE 3. COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 310 V Collector-Emitter Voltage VCEO 305 V Emitter-Base Voltage VEBO 5 V IC Collector Current -Continuous 500 mA Junction and Storage Temperature TJ, Tstg -55-150 Thermal R

 9.27. Size:47K  hsmc
 hmpsa42.pdf 

Spec. No. HE6333 HI-SINCERITY Issued Date 1992.11.18 Revised Date 2004.07.21 MICROELECTRONICS CORP. Page No. 1/4 HMPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The HMPSA42 is high voltage transistor. Features TO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92 Absolute Maximum

 9.28. Size:47K  hsmc
 hmpsa44.pdf 

Spec. No. HE6358 HI-SINCERITY Issued Date 1993.01.15 Revised Date 2004.07.21 MICROELECTRONICS CORP. Page No. 1/4 HMPSA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44 is designed for application that requires high voltage. Features TO-92 High Breakdown Voltage 400(Min) at IC=1mA High Current Gain IC=300mA at 25 C Complementary to HMPSA94 Absolute

 9.29. Size:654K  shenzhen
 mpsa44.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

 9.30. Size:237K  shenzhen
 mpsa42.pdf 

 9.31. Size:513K  blue-rocket-elect
 mpsa42i.pdf 

 9.32. Size:1034K  blue-rocket-elect
 mpsa44.pdf 

MPSA44 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Collector PIN

 9.33. Size:945K  blue-rocket-elect
 mpsa42.pdf 

 9.34. Size:442K  blue-rocket-elect
 mpsa42d.pdf 

 9.35. Size:359K  semtech
 mpsa44.pdf 

MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

 9.36. Size:185K  semtech
 mpsa42 mpsa43.pdf 

MPSA42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MPSA42 300 VCBO V MPSA43 200 Collector Emitter

 9.37. Size:1102K  china
 mpsa44u.pdf 

 9.38. Size:170K  first silicon
 mpsa44.pdf 

SEMICONDUCTOR MPSA44 TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B C FEATURES High Breakdown Voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 2.30 F F M 0.51 MAX Symbol Parameter Value Unit 1 2 3 1. EMITTER VCBO Collector-Base Voltage 500 V

 9.39. Size:299K  first silicon
 mpsa42.pdf 

SEMICONDUCTOR MPSA42 TECHNICAL DATA MPSA42 TRANSISTOR (NPN) B C FEATURES High voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27 G 0.85 H 0.45 Symbol Parameter Value Unit _ H J 14.00 0.50 + L 2.30 F F VCBO Collector-Base Voltage 300 V M 0.51 MAX VCEO Collector-Emitter Voltage 3

 9.40. Size:213K  dc components
 mpsa42m.pdf 

DC COMPONENTS CO., LTD. MPSA42M DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as a video output to drive color CRT, or as a dialer circuit in electronic telephone. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2oTyp 2 = Base .190(4.83) 3 = Collector .170(4.33) 2oTyp .500 Min (12.70) Absolute Maximum Rati

 9.41. Size:86K  diotec
 mpsa44-bk.pdf 

MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW 0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Special packaging bul

 9.42. Size:86K  diotec
 mpsa42-bk.pdf 

MPSA42-BK MPSA42-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW 0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Special packaging bul

 9.43. Size:106K  eicsemi
 mpsa42.pdf 

Certificate TH97/10561QM Certificate TW00/17276EM MPSA42 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 1. Emitter 2. Base 3. Collector and MPSA 93 is recommended. TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO