UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 11 FEATURES TO-252SOT-89* Collector-Emitter Voltage: * V =400V (UTC MPSA44) CEO* V =350V (UTC MPSA45) CEO* Collector Current up to 300mA 11TO-92NLTO-921TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

SEMICONDUCTOR MPSA44/45TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.B CFEATURES High Breakdown Voltage.Collector Power Dissipation : PC=625mW.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA44 500H 0.45Collector-Base_VCBO HV J 14.00

UTC MPSA 44/ 45 NPN EPITAXIAL SILICONTRANSISTORHIGH VOLTAGE TRANSISTORFEATURES*Collector-Emitter voltage:VCEO=400V(MPSA44)VCEO=350V(MPSA45)*Collector current up to 300mA*Complement to MPSA94/93*Collector Dissipation:Pc(max)=625mW APPLICATION*Telephone switchingTO-92*High voltage switch1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature ra

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA44/DHigh Voltage TransistorNPN SiliconMPSA44Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 400 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 500 VdcEmitterBase Voltage VEBO 6.0 Vdc

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA42/DHigh Voltage Transistors*MPSA42NPN SiliconMPSA43*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSA42 MPSA43 UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 300 200 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 300 200 VdcEmitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA44NPN high-voltage transistor1999 Apr 27Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN high-voltage transistor MPSA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 collector2 baseAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D186MPSA42; MPSA43NPN high-voltage transistorsProduct data sheet 2004 Oct 11Supersedes data of 1999 Apr 12NXP Semiconductors Product data sheetNPN high-voltage transistors MPSA42; MPSA43FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 collector2 baseAPPLICATIONS3 em

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA42; MPSA43NPN high-voltage transistors1999 Apr 12Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN high-voltage transistors MPSA42; MPSA43FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 collector2 baseAPPLICATION

October 2009MPSA42 / MMBTA42 / PZTA42NPN High Voltage AmplifierFeatures This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from Process 48. MPSA42 MMBTA42 PZTA42CCE E C BB SOT-23TO-92SOT-223Mark: 1DE B CAbsolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Valu

MPSA43NPN High Voltage Amplifier This device is designed for application as a video output to drive color CRT and other high voltage applications. Sourced from process 48. See MPSA42 for characteristics.TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 200 VVC

MPSA42 MMBTA42 PZTA42CCEECBC TO-92BSOT-23BSOT-223EMark: 1DNPN High Voltage AmplifierThis device is designed for application as a video output todrive color CRT and other high voltage applications. Sourcedfrom Process 48.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 300 VVCBO Collect

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MPSA42MCCMicro Commercial ComponentsTMTHRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933MPSA43Fax: (818) 701-4939FeaturesNPN Silicon High Through Hole Package 150oC Junction Temperature Voltage Transistor Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1625mW Lead Free Finish/RoHS Compliant

MPSA44Preferred Device High Voltage TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 400 Vdc2BASECollector -Base Voltage VCBO 500 VdcEmitter -Base Voltage VEBO 6.0 Vdc1Collector Current - Continuous IC 300 mAdcEMITTERTotal Device Dissipation @ TA

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

MPSA42, MPSA43High Voltage TransistorsNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSA43 200EMITTERMPSA42 300Collector-Base Voltage VCBO VdcMPSA43 200MPSA42 300Emitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 500 mAdcTO

UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage:* V =400V CEO* Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape ReelMPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box

UTC MPSA42/43 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORDESCRIPTION The UTC MPSA42/43 are high voltage transistors,designed for telephone switch and high voltageswitch.FEATURES*Collector-Emitter voltage:1 VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43)*High current gain*Complement to UTC MPSA92/93TO-92*Collector Dissipation: Pc(max)=625mW1:EMITTER 2:BASE

MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G HEmitterJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -Base KD 3.30 3.81E 0.36 0.56F 0.36 0.51 E C F G 1.27 TYP.Collector

MPSA42 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G HEmitterJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -Base KD 3.30 3.81E 0.36 0.56F 0.36 0.51 E C F G 1.27 TYP.Collector

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON TRANSISTORS MPSA 42MPSA 43TO-92CBECBEHigh Voltage Transistors.ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)DESCRIPTION SYMBOL MPSA42 MPSA43 UNITCollector -Emitter Voltage VCEO 300 200 VCollector -Base Voltage VCBO 300 200 VEmitter -B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44MPSA45TO-92Plastic PackageCBEHigh Voltage TransistorsComplementary of MPSA44 is MPSA94ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MPSA44 MPSA45 UNITSVCBOCollector Base Voltage 500 400 VVCEOCollector Emitter Voltage 400 350 VVEBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPSA44 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE High Breakdown Voltage3.COLLECTOR Equivalent Circuit FE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsMPSA42 TRANSISTOR (NPN)FEATURES TO-92 High voltage 1. EMITTER2. BASE3. COLLECTOR Equivalent Circuit A42=Device code Solid dot=Green molding compound device, A42 Z if none,the normal deviceZ=Rank of hFE XXX=Code1ORDERING INFORMATION Part Number Package Pack

SEMICONDUCTOR MPSA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.B CFEATURESComplementary to MPSA92/93.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA42 300 H 0.45Collector-Base_VCBO HV J 14.00 + 0.50Volta

SEMICONDUCTOR MPSA42/43TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION.B CFEATURESComplementary to MPSA92/93.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25)D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA42 300 H 0.45Collector-Base_VCBO HV J 14.00 + 0.50V

MPSA44High-Voltage NPN TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 400VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper

MPSA43High-Voltage NPN Transistors1. EMITTERP b Lead(Pb)-Free2. BASE3. COLLECTOR123TO-92ABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 200 VdcCollector-Base Voltage VCBO 200VdcVEBOEmitter-Base Voltage Vdc6.0Collector Current IC500 mAdcPD 0.625Total Device Dissipation T =25C WAJunction Temperature T 150

MPSA42General Purpose TransistorsNPN SiliconTO-9211. EMITTER 232. BASE3. COLLECTORMAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 310 VCollector-Emitter Voltage VCEO 305 VEmitter-Base Voltage VEBO 5 VIC Collector Current -Continuous 500 mAJunction and Storage Temperature TJ, Tstg -55-150 Thermal R

Spec. No. : HE6333HI-SINCERITYIssued Date : 1992.11.18Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA42NPN EPITACIAL PLANAR TRANSISTORDescriptionThe HMPSA42 is high voltage transistor.FeaturesTO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92Absolute Maximum

Spec. No. : HE6358HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA44 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400(Min) at IC=1mA High Current Gain: IC=300mA at 25C Complementary to HMPSA94Absolute

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA42 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 300 V Operating and storage junction temperature range TJ, Tstg: -55 to +150

MPSA42I(BR3DG42I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features ,,, MPSA92I(BR3CG92I) High voltage, Low saturation voltage, low collector capacitance output, complementary pair with MPSA92I(BR3CG92I).

MPSA44 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Collector PIN

MPSA42 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features MPSA92 High voltage low saturation, low collector output capacitance, complementary pair with MPSA92.. / Applications

MPSA42D(BR3DG42D) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features ,,, MPSA92D(BR3CG92D) High voltage, low saturation voltage, low collector output capacitance, complementary pair with MPSA42D(BR3DG42D).

MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

MPSA42 / 43 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 and MPSA 93 is recommended. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage MPSA42 300 VCBO V MPSA43 200 Collector Emitter

SEMICONDUCTOR MPSA44TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B CFEATURES High Breakdown Voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 + 0.50MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 2.30F FM 0.51 MAXSymbol Parameter Value Unit 1 2 3 1. EMITTERVCBO Collector-Base Voltage 500 V

SEMICONDUCTORMPSA42TECHNICAL DATAMPSA42 TRANSISTOR (NPN)B CFEATURES High voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAXGC 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Unit _HJ 14.00 0.50+L 2.30F FVCBO Collector-Base Voltage 300 V M 0.51 MAXVCEO Collector-Emitter Voltage 3

DC COMPONENTS CO., LTD.MPSA42MDISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use as a video output to drive colorCRT, or as a dialer circuit in electronic telephone.TO-92Pinning .190(4.83).170(4.33)1 = Emitter2oTyp2 = Base.190(4.83)3 = Collector.170(4.33)2oTyp.500Min(12.70)Absolute Maximum Rati

MPSA44-BKMPSA44-BKHigh voltage Si-epitaxial planar transistorsNPN NPNHochspannungs-Si-Epitaxial Planar-TransistorenVersion 2011-07-07Power dissipation 625 mW0.1Verlustleistung4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. 0.18 gGewicht ca.E B CPlastic material has UL classification 94V-0Gehusematerial UL94V-0 klassifiziertSpecial packaging bul

MPSA42-BKMPSA42-BKHigh voltage Si-epitaxial planar transistorsNPN NPNHochspannungs-Si-Epitaxial Planar-TransistorenVersion 2011-07-07Power dissipation 625 mW0.1Verlustleistung4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. 0.18 gGewicht ca.E B CPlastic material has UL classification 94V-0Gehusematerial UL94V-0 klassifiziertSpecial packaging bul

Certificate TH97/10561QM Certificate TW00/17276EMMPSA42 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. complementary type the PNP transistor MPSA 92 1. Emitter 2. Base 3. Collectorand MPSA 93 is recommended. TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO