Биполярный транзистор MRF323 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF323
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 55 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимальный постоянный ток коллектора (Ic): 2.2 A
Предельная температура PN-перехода (Tj): 200 °C
Корпус транзистора: X54D
MRF323 Datasheet (PDF)
mrf323.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF323/DThe RF LineNPN SiliconMRF323RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VOutput Power = 20 Watts20 W, 400 MHzPower Gain = 10 dB MinRF POWEREfficiency = 50% M
mrf323re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF323/DThe RF LineNPN SiliconMRF323RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in the 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VOutput Power = 20 Watts20 W, 400 MHzPower Gain = 10 dB MinRF POWEREfficiency = 50% M
mrf321.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF321/DThe RF LineNPN SiliconMRF321RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VdcOutput Power = 10 Watts10 W, 400 MHzPower Gain = 12 dB MinRF POWEREfficiency = 50% Min
mrf327.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz
mrf325re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF325/DThe RF LineNPN SiliconMRF325RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts30 W, 225 to 400 MHzMinimum Gain = 8.5 dBCONTROLLED QE
mrf329.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF329/DThe RF LineNPN SiliconMRF329RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts100 W, 100 to 500 MHzMinimum Gain = 7.0 dBCONTROLLED Q
mrf326re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF326/DThe RF LineNPN SiliconMRF326RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 40 Watts40 W, 225 to 400 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF P
mrf321re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF321/DThe RF LineNPN SiliconMRF321RF Power Transistor. . . designed primarily for wideband largesignal driver and predriver amplifierstages in 200500 MHz frequency range. Guaranteed Performance at 400 MHz, 28 VdcOutput Power = 10 Watts10 W, 400 MHzPower Gain = 12 dB MinRF POWEREfficiency = 50% Min
mrf327re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz
mrf327rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF327/DThe RF LineNPN SiliconMRF327RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 80 Watts over 225 to 400 MHz Band80 W, 100 to 500 MHzMinimum Gain = 7.3 dB @ 400 MHz
mrf326.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF326/DThe RF LineNPN SiliconMRF326RF Power Transistor. . . designed primarily for wideband largesignal output amplifier stages in the100 to 500 MHz frequency range. Guaranteed Performance @ 400 MHz, 28 VdcOutput Power = 40 Watts40 W, 225 to 400 MHzMinimum Gain = 9.0 dBCONTROLLED QBROADBAND RF P
mrf325.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF325/DThe RF LineNPN SiliconMRF325RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 30 Watts30 W, 225 to 400 MHzMinimum Gain = 8.5 dBCONTROLLED QE
mrf329re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF329/DThe RF LineNPN SiliconMRF329RF Power Transistor. . . designed primarily for wideband largesignal output and driver amplifierstages in the 100 to 500 MHz frequency range. Specified 28 Volt, 400 MHz Characteristics Output Power = 100 Watts100 W, 100 to 500 MHzMinimum Gain = 7.0 dBCONTROLLED Q
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050