MRF422 datasheet, аналоги, основные параметры
Наименование производителя: MRF422
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 290 W
Макcимально допустимое напряжение коллектор-база (Ucb): 85 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: M174
Аналоги (замена) для MRF422
- подборⓘ биполярного транзистора по параметрам
MRF422 даташит
..1. Size:97K motorola
mrf422.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermod
..2. Size:230K macom
mrf422.pdf 
MRF422 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 150W(PEP), 30MHz, 28V Designed primarily for applications as a high power linear amplifier from 2.0 Product Image to 30 MHz. Specified 28 V, 30 MHz characteristics Output power = 150 W (PEP) Minimum gain = 10 dB Efficiency = 40% Intermodulation distortion @ 150 W (PEP)
0.1. Size:97K motorola
mrf422re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF422/D The RF Line NPN Silicon MRF422 RF Power Transistor Designed primarily for applications as a high power linear amplifier from 2.0 to 30 MHz. Specified 28 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermod
9.1. Size:102K motorola
mrf421rev1.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo
9.2. Size:112K motorola
mrf426re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR
9.3. Size:112K motorola
mrf426.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF426/D The RF Line NPN Silicon MRF426 RF Power Transistor . . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment. Specified 28 Volt, 30 MHz Characteristics Output Power = 25 W (PEP) 25 W (PEP), 30 MHz Minimum Gain = 22 dB RF POWER Efficiency = 35% TRANSISTOR
9.4. Size:99K motorola
mrf421re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo
9.5. Size:141K motorola
mrf429.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain
9.6. Size:141K motorola
mrf429re.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF429/D The RF Line NPN Silicon MRF429 RF Power Transistor Designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP) 150 W (LINEAR), 30 MHz Minimum Gain
9.7. Size:99K motorola
mrf421.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF421/D The RF Line NPN Silicon MRF421 RF Power Transistor Designed primarily for application as a high power linear amplifier from 2.0 to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 100 W (PEP) 100 W (PEP), 30 MHz Minimum Gain = 10 dB RF POWER Efficiency = 40% TRANSISTORS Intermo
9.8. Size:267K macom
mrf426.pdf 
MRF426 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 25W(PEP), 30MHz, 28V Designed for high gain driver and output linear amplifier stages in 1.5 to Product Image 30 MHz HF/SSB equipment. Specified 28 V, 30 MHz characteristics Output power = 25 W (PEP) Minimum gain = 22 dB Efficiency = 35% Intermodulation distortion @ 2
9.9. Size:73K eleflow
mrf427a.pdf 
ELEFLOW TECHNOLOGIES MRF427/MRF427A www.eleflow.com NPN Silicon RF power transistor MRF427 / MRF427A Description MRF427/MRF427A is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30MHz. Idea for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 25 W (PEP), Minimum Gain = 18 dB
9.10. Size:26K eleflow
mrf429.pdf 
ELEFLOW TECHNOLOGIES MRF429 www.eleflow.com NPN Silicon RF power transistor MRF429 Description MRF429 is designed primarily for high voltage applications as a high power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features Specified 50 Volt, 30 MHz Characteristics Output Power = 150 W (PEP), Minimum Gain = 13 dB, Efficiency = 45% M
Другие транзисторы: MRF342, MRF3866R2, MRF401, MRF402, MRF404, MRF406, MRF420, MRF421, A1015, MRF426, MRF427, MRF428, MRF432, MRF433, MRF4427, MRF449, MRF450
