Биполярный транзистор MRF449 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF449
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: M174
MRF449 Datasheet (PDF)
mrf449a.pdf
HG RF POWER TRANSISTORMRF449ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF449ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19
mrf4427r2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427R2RF Low Power TransistorDesigned for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface
mrf4427.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427RF Low Power Transistor. . . designed for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surf
mrf4427rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427R2RF Low Power TransistorDesigned for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surface
mrf4427r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF4427/DThe RF LineNPN SiliconMRF4427RF Low Power Transistor. . . designed for amplifier, frequency multiplier, or oscillator applications inindustrial equipment constructed with surface mount components. Suitable foruse as output driver or predriver stages in VHF and UHF equipment. Low Cost SORF Plastic Surf
mrf448.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER
mrf448re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF448/DThe RF LineNPN SiliconMRF448RF Power TransistorDesigned primarily for highvoltage applications as a highpower linearamplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 Volt, 30 MHz CharacteristicsOutput Power = 250 W250 W, 30 MHzMinimum Gain = 12 dBRF POWER
mrf448.pdf
MRF448 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 250W, 30MHz, 50V Designed primarily for highvoltage applications as a highpower Product Image linear amplifiers from 2.0 to 30 MHz. Ideal for marine and base station equipment. Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45
mrf448.pdf
ELEFLOW TECHNOLOGIES MRF448www.eleflow.com NPN Silicon RF power transistor MRF448 Description: MRF448 is designed primarily for highvoltage applications as a highpower linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment. Features: Specified 50 Volt, 30 MHz Characteristics: Output Power = 250 W, Minimum Gain = 1, Efficiency = 45% Maximum Rat
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS