Биполярный транзистор 2N4897 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N4897
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 7 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 80 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO39
2N4897 Datasheet (PDF)
2n4897.pdf
2N4897Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n4897x.pdf
2N4897XDimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 80V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n4899x.pdf
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
2n4896.pdf
2N4896Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n4895.pdf
2N4895Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 60V dia.IC = 5A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1 3
2n4898x.pdf
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
2n4898 2n4899 2n4900.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFi
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi
Другие транзисторы... 2N4879 , 2N4880 , 2N4888 , 2N4889 , 2N4890 , 2N4890S , 2N4895 , 2N4896 , A1266 , 2N4898 , 2N4899 , 2N49 , 2N4900 , 2N4901 , 2N4901SM , 2N4902 , 2N4903 .
