Справочник транзисторов. MRF641

 

Биполярный транзистор MRF641 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MRF641
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 36 V
   Макcимальный постоянный ток коллектора (Ic): 3 A
   Предельная температура PN-перехода (Tj): 175 °C
   Корпус транзистора: TO128

 Аналоги (замена) для MRF641

 

 

MRF641 Datasheet (PDF)

 ..1. Size:103K  motorola
mrf641.pdf

MRF641 MRF641

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF641/DThe RF LineNPN SiliconMRF641RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts15 W, 470 MHzMinimum Gain = 7.8 dBCONTROLLED Q

 0.1. Size:70K  motorola
mrf6414pht.pdf

MRF641 MRF641

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414PHT/DThe RF LineMRF6414NPN SiliconPHOTOMASTERRF Power TransistorCASE 333A02, STYLE 2C9T2 +VCCR1C8P1C5D1C6C7D2C4R2RF OUTPUTRF INPUTC3T150 WC1C250 WC1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k, TrimmerC2, C7 330 pF, Chip Capacitor, 0805 R1 1 k, ResistorC5, C8

 0.2. Size:70K  motorola
mrf6414p.pdf

MRF641 MRF641

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414PHT/DThe RF LineMRF6414NPN SiliconPHOTOMASTERRF Power TransistorCASE 333A02, STYLE 2C9T2 +VCCR1C8P1C5D1C6C7D2C4R2RF OUTPUTRF INPUTC3T150 WC1C250 WC1, C3 100 pF, Chip Capacitor, Hight Q P1 1 k, TrimmerC2, C7 330 pF, Chip Capacitor, 0805 R1 1 k, ResistorC5, C8

 0.3. Size:108K  motorola
mrf6414r.pdf

MRF641 MRF641

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF6414/DThe RF LineMRF6414NPN SiliconRF Power TransistorThe MRF6414 is designed for 26 volt UHF large signal, common emitter,class AB linear amplifier applications.50 W, 960 MHz Specified 26 Volt, 960 MHz Characteristics RF POWER TRANSISTOROutput Power = 50 Watts NPN SILICONMinimum Gain = 8.5 dB @ 960 MHz, C

 0.4. Size:103K  motorola
mrf641re.pdf

MRF641 MRF641

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF641/DThe RF LineNPN SiliconMRF641RF Power Transistor. . . designed for 12.5 Volt UHF largesignal amplifier applications in industrialand commercial FM equipment operating to 512 MHz. Specified 12.5 Volt, 470 MHz Characteristics Output Power = 15 Watts15 W, 470 MHzMinimum Gain = 7.8 dBCONTROLLED Q

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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