Биполярный транзистор 2N4900 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N4900
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 3 MHz
Ёмкость коллекторного перехода (Cc): 100 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO66
2N4900 Datasheet (PDF)
2n4898 2n4899 2n4900.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFi
2n4898 2n4899 2n4900.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi
2n4900x.pdf
2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.
2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf
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2n4901-2n4902-2n4903.pdf
PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2
2n4908.pdf
2N4908Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n4901smd.pdf
2N4901SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 40V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0
2n4909.pdf
2N4909Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n4907.pdf
2N4907Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 40V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n4901 2n4902 2n4903.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067,2N5068,2N5069 Low collector-emitter saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) an
2n4908.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCB
2n4904 2n4905 2n4906.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION With TO-3 package Complement to type 2N4913/4914/4915 Low collector saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Coll
2n4902.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 20-80 @IC= -1A Complement to Type 2N5068 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
2n4909.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCB
2n4903.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 20-80 @IC= -1A Complement to Type 2N5069 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB
2n4906.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 25-100 @IC= -2.5A Complement to Type 2N4915 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) S
2n4901 2n4902 2n4903.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067/5068/5069 Low collector saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Coll
2n4904.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 25-100 @IC= -2.5A Complement to Type 2N4913 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) S
2n4907.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCB
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