Справочник транзисторов. MRF901

 

Биполярный транзистор MRF901 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MRF901
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
   Макcимальный постоянный ток коллектора (Ic): 0.03 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4500 MHz
   Ёмкость коллекторного перехода (Cc): 1 pf
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO131

 Аналоги (замена) для MRF901

 

 

MRF901 Datasheet (PDF)

 ..1. Size:267K  motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf

MRF901 MRF901

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC

 9.1. Size:365K  freescale
mrf9060.pdf

MRF901 MRF901

Document Number: MRF9060Freescale SemiconductorRev. 9, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9060LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9060LSR1devices make them ideal for large-signal, common-source amplif

 9.2. Size:331K  freescale
mrf9085.pdf

MRF901 MRF901

Document Number: MRF9085Freescale SemiconductorRev. 11, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9085LR3Designed for broadband commercial and industrial applications withMRF9085LSR3frequencies from 865 to 895 MHz. The high gain and broadband performanceof these devices make them ideal for large-signal, common-source am

 9.3. Size:481K  freescale
mrf9080.pdf

MRF901 MRF901

Document Number: MRF9080Freescale SemiconductorRev. 6, 5/2006Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9080LR3Designed for GSM 900 MHz frequency band, the high gain and broadbandMRF9080LSR3performance of these devices make them ideal for large - signal, common -source amplifier applications in 26 volt base station equipment.

 9.4. Size:351K  freescale
mrf9030.pdf

MRF901 MRF901

Document Number: MRF9030Freescale SemiconductorRev. 8, 9/2008Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9030LR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications in

 9.5. Size:392K  freescale
mrf9045.pdf

MRF901 MRF901

Document Number: MRF9045Freescale SemiconductorRev. 11, 9/2008Technical DataRF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETsMRF9045LR1Designed for broadband commercial and industrial applications with frequen-cies up to 1000 MHz. The high gain and broadband performance of theseMRF9045LSR1devices make them ideal for large-signal, common-source ampli

 9.6. Size:394K  freescale
mrf9002nr2.pdf

MRF901 MRF901

Document Number: MRF9002NR2Freescale SemiconductorRev. 8, 5/2006Technical DataRF Power Field Effect Transistor ArrayN-Channel Enhancement-Mode Lateral MOSFETMRF9002NR2Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applica

 9.7. Size:449K  freescale
mrf9060n.pdf

MRF901 MRF901

Document Number: MRF9060NFreescale SemiconductorRev. 13, 6/2009Technical DataRF Power Field Effect TransistorN-Channel Enhancement-Mode Lateral MOSFETDesigned for broadband commercial and industrial applications with frequen-MRF9060NR1cies up to 1000 MHz. The high gain and broadband performance of this devicemake it ideal for large-signal, common-source amplifier applications

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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