Биполярный транзистор MSC82100 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MSC82100
Тип материала: Si
Полярность: NPN
Макcимально допустимое напряжение коллектор-база (Ucb): 45 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3.5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 1600 MHz
Ёмкость коллекторного перехода (Cc): 3.2 pf
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: SO11
MSC82100 Datasheet (PDF)
msc82100.pdf
MSC82100RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY :1 @ RATEDCONDITIONS.ft 1.6 GHz TYPICAL.NOISE FIGURE 15.5 dB @ 2 GHz.250 2LFL (S011).POUT 27 dBm MIN. @ 1.0 GHz= hermetically sealedORDER CODE BRANDINGMSC82100 82100PIN CONNECTIONDESCRIPTIONThe MSC82100 is a hermet
msc82304.pdf
MSC82304RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 3.8 W MIN. WITH 10.0 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82304 82304PIN CONNECTIONDESCRIPTIONThe MSC82304 is a common base hermeticallysealed
msc82302.pdf
MSC82302RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 1.8 W MIN. WITH 10.0 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82302 82302PIN CONNECTIONDESCRIPTIONThe MSC82302 is a common base hermeticallysealed
msc82001.pdf
MSC82001RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY @ RATED:1CONDITIONS.HERMETIC STRIPAC PACKAGE.POUT 1.0 W MIN. WITH 7.0 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82001 82001PIN CONNECTIONDESCRIPTIONThe MSC82001 is a common base hermetic
msc82010.pdf
MSC82010RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 10 W MIN. WITH 5.2 dB GAIN @OUT =2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82010 82010PIN CONNECTIONDESCRIPTIONThe MSC82010 is a common base hermeticallysealed silicon NPN microw
msc82005.pdf
MSC82005RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONS.EMITTER BALLASTED.VSWR CAPABILITY :1 @ RATEDCONDITIONS.REFRACTORY/GOLD METALLIZATION.HERMETIC STRIPAC PACKAGE.POUT 5.0 W MIN. WITH 7.0 dB GAIN=@ 2.0 GHz.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82005 82005PIN CONNECTIONDESCRIPTIONThe MSC82005 is a common base hermeti
msc82306.pdf
MSC82306RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY\GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 5.5 W MIN. WITH 9.6 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82306 82306PIN CONNECTIONDESCRIPTIONThe MSC82306 is a common base hermeticallysealed s
msc82307.pdf
MSC82307RF & MICROWAVE TRANSISTORSGENERAL PURPOSE AMPLIFIER APPLICATIONSPRELIMINARY DATA.REFRACTORY/GOLD METALLIZATION.VSWR CAPABILITY 20:1 @ RATEDCONDITIONS.HERMETIC STRIPAC PACKAGE.P 7.0 W MIN. WITH 9.6 dB GAINOUT =.250 2LFL (S010)hermetically sealedORDER CODE BRANDINGMSC82307 82307PIN CONNECTIONDESCRIPTIONThe MSC82307 is a common base hermeticallysealed s
msc82040.pdf
MSC82040RF & MICROWAVE TRANSISTORSGENERAL PURPOSE LINEAR APPLICATIONS.EMITTER BALLASTED.CLASS A LINEAR OPERATION.COMMON EMITTER.VSWR CAPABILITY :1 @ RATEDCONDITIONS.ft 1.6 GHz TYPICAL.NOISE FIGURE 15.5 dB @ 2 GHz.230 4L STUD (S027).POUT 27 dBm MIN. @ 1.0 GHz= hermetically sealedORDER CODE BRANDINGMSC82040 82040PIN CONNECTIONDESCRIPTIONThe MSC82040 is a her
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050