2N4913. Аналоги и основные параметры
Наименование производителя: 2N4913
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 87 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO3
Аналоги (замена) для 2N4913
- подборⓘ биполярного транзистора по параметрам
2N4913 даташит
..2. Size:36K inchange semiconductor
2n4913.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- hFE= 25-100 @IC= 2.5A Complement to Type 2N4904 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
9.1. Size:254K motorola
2n4918 2n4919 2n4920.pdf 
Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature *Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp 3 AMPERE Excellent
9.3. Size:113K onsemi
2n4918 2n4919 2n4920.pdf 
ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high performance plastic devices feature 3 AMPERE Low Saturation Voltage GENERAL PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40 80 VOLTS Exc
9.4. Size:263K onsemi
2n4918 2n4919 2n4920 2n4920g.pdf 
2N4918 - 2N4920 Series Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C 3.0 A, 40-80 V, 30 W Excellent Safe Oper
9.5. Size:117K onsemi
2n4919g.pdf 
2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
9.6. Size:117K onsemi
2n4918g.pdf 
2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http //onsemi.com Features Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
9.7. Size:10K semelab
2n4910xsmd05.pdf 
2N4910XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her
9.8. Size:10K semelab
2n4911xsmd05.pdf 
2N4911XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her
9.9. Size:15K semelab
2n4910x 2n4911x 2n4912x.pdf 
2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS SCREENING OPTIONS AVAILABE 1 2 TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO 66 Metal Package. PIN 1 =
9.10. Size:10K semelab
2n4910xsmd.pdf 
2N4910XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.11. Size:10K semelab
2n4911xsmd.pdf 
2N4911XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
9.12. Size:41K jmnic
2n4918 2n4919 2n4920.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to
9.13. Size:118K inchange semiconductor
2n4918 2n4919 2n4920.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2
9.14. Size:36K inchange semiconductor
2n4915.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- hFE= 25-100 @IC= 2.5A Complement to Type 2N4906 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
9.15. Size:53K inchange semiconductor
2n4912.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation Complement to Type 2N4900 APPLICATIONS Designed for driver circuits, switching and amplifier applications.
9.16. Size:53K inchange semiconductor
2n4918.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= -40V(Min) Low Collector Saturatioin Voltage- VCE(sat)= -0.6V(Max.)@ IC= -1A Wide Area of Safe Operation Complement to Type 2N4921 APPLICATIONS Designed for driver circuits, switching and amplifier application
9.17. Size:53K inchange semiconductor
2n4910.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 40V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=
9.18. Size:36K inchange semiconductor
2n4914.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- hFE= 25-100 @IC= 2.5A Complement to Type 2N4905 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
9.19. Size:53K inchange semiconductor
2n4911.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Low Collector Saturatioin Voltage- VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=
Другие транзисторы: 2N4909, 2N4910, 2N4910SM, 2N4911, 2N4911SM, 2N4912, 2N4912SM, 2N4912X, BD136, 2N4914, 2N4915, 2N4916, 2N4917, 2N4918, 2N4919, 2N4920, 2N4921
