Биполярный транзистор PMBTA43 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PMBTA43
Маркировка: 1E_P1E_p1E_t1E_W1E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.33 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO236
PMBTA43 Datasheet (PDF)
pmbta44.pdf
PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua
pmbta42 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA42NPN high-voltage transistor1999 Apr 22Product specificationSupersedes data of 1997 Jul 02Philips Semiconductors Product specificationNPN high-voltage transistor PMBTA42FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION High voltage (max. 300 V).1 base2 emitterAPPLICATIONS3 collector
pmbta42.pdf
PMBTA42300 V, 100 mA NPN high-voltage transistorRev. 05 12 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.PNP complement: PMBTA92.1.2 Features High voltage (max. 300 V)1.3 Applications Telephony and professional communication equipment1.4 Qui
pmbta42ds.pdf
PMBTA42DSNPN/NPN high-voltage double transistorsRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface MountedDevice (SMD) plastic package.1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1.3 Applications Automotive:
pmbta45.pdf
PMBTA45500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistorRev. 02 10 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9050T.1.2 Features and benefits High voltage Low collector
pmbta44.pdf
PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua
pmbta42.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pmbta42ds.pdf
PMBTA42DSNPN/NPN high-voltage double transistorsRev. 02 27 August 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN high-voltage double transistors in a small SOT457 (SC-74) Surface MountedDevice (SMD) plastic package.1.2 Features High breakdown voltage Two electrically isolated transistors Small SMD plastic package1.3 Applications Automotive:
pmbta45.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Другие транзисторы... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050