Биполярный транзистор PMD1701K - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PMD1701K
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 180 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Статический коэффициент передачи тока (hfe): 700
Корпус транзистора: TO3
PMD1701K Datasheet (PDF)
pmd1701k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1701K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V(Min) Complement to type PMD1601K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
pmd1702k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1702K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) Complement to type PMD1602K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER V
pmd1703k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD1703K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) Complement to type PMD1603K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
pmd17k60.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD16K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
pmd17k100.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD16K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAME
pmd17k80.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD16K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050