2N5087 - описание и поиск аналогов

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 3.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N5087 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1

2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VCEO Collect

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 50 Vdc Collector Base Voltage VCBO 50 Vdc Emitter Base Voltage VEBO 3.0 Vdc Colle

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http //onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http //onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features Pb-Free Packages are Available* http //onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

Spec. No. HE6210 HI-SINCERITY Issued Date 1998.02.01 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...........